| Literature DB >> 19319182 |
Paulo S Boggio1, Felipe Fregni, Claudia Valasek, Sophie Ellwood, Richard Chi, Jason Gallate, Alvaro Pascual-Leone, Allan Snyder.
Abstract
A recent study found that false memories were reduced by 36% when low frequency repetitive transcranial magnetic stimulation (rTMS) was applied to the left anterior temporal lobe after the encoding (study) phase. Here we were interested in the consequences on a false memory task of brain stimulation throughout the encoding and retrieval task phases. We used transcranial direct current stimulation (tDCS) because it has been shown to be a useful tool to enhance cognition. Specifically, we examined whether tDCS can induce changes in a task assessing false memories. Based on our preliminary results, three conditions of stimulation were chosen: anodal left/cathodal right anterior temporal lobe (ATL) stimulation ("bilateral stimulation"); anodal left ATL stimulation (with a large contralateral cathodal electrode--referred as "unilateral stimulation") and sham stimulation. Our results showed that false memories were reduced significantly after the two active conditions (unilateral and bilateral stimulation) as compared with sham stimulation. There were no significant changes in veridical memories. Our findings show that false memories are reduced by 73% when anodal tDCS is applied to the anterior temporal lobes throughout the encoding and retrieval stages, suggesting a possible strategy for improving certain aspects of learning.Entities:
Mesh:
Year: 2009 PMID: 19319182 PMCID: PMC2655647 DOI: 10.1371/journal.pone.0004959
Source DB: PubMed Journal: PLoS One ISSN: 1932-6203 Impact factor: 3.240
Figure 1Schematic representation of electrode montages.
A represents bilateral stimulation (35 cm2 electrodes in the left and right ATL) and B represents unilateral stimulation (35 cm2 electrode in the left and 100 cm2 electrode in the right ATL).
Figure 2Performance as indexed by number of false memories during sham, unilateral and bilateral stimulation.
Columns represent the mean number of false memories and error bars indicate mean standard error.
Mean number of veridical memories during and after stimulation.
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| tDCS | During | After | ||
| Bilateral | 7.6 | ±0.2 | 7.8 | ±0.6 |
| Unilateral | 7.7 | ±0.3 | 8.3 | ±0.1 |
| Sham | 8.3 | ±0.2 | 7.9 | ±1.0 |