Literature DB >> 22706701

Valley polarization in MoS2 monolayers by optical pumping.

Hualing Zeng1, Junfeng Dai, Wang Yao, Di Xiao, Xiaodong Cui.   

Abstract

Most electronic devices exploit the electric charge of electrons, but it is also possible to build devices that rely on other properties of electrons. Spintronic devices, for example, make use of the spin of electrons. Valleytronics is a more recent development that relies on the fact that the conduction bands of some materials have two or more minima at equal energies but at different positions in momentum space. To make a valleytronic device it is necessary to control the number of electrons in these valleys, thereby producing a valley polarization. Single-layer MoS(2) is a promising material for valleytronics because both the conduction and valence band edges have two energy-degenerate valleys at the corners of the first Brillouin zone. Here, we demonstrate that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2). Our results, and similar results by Mak et al., demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS(2) monolayers.

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Year:  2012        PMID: 22706701     DOI: 10.1038/nnano.2012.95

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  12 in total

1.  Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field.

Authors:  Y P Shkolnikov; E P De Poortere; E Tutuc; M Shayegan
Journal:  Phys Rev Lett       Date:  2002-11-07       Impact factor: 9.161

2.  Raman study and lattice dynamics of single molecular layers of MoS2.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1991-08-15

3.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

4.  Strain-induced pseudomagnetic field for novel graphene electronics.

Authors:  Tony Low; F Guinea
Journal:  Nano Lett       Date:  2010-09-08       Impact factor: 11.189

5.  Anomalous lattice vibrations of single- and few-layer MoS2.

Authors:  Changgu Lee; Hugen Yan; Louis E Brus; Tony F Heinz; James Hone; Sunmin Ryu
Journal:  ACS Nano       Date:  2010-05-25       Impact factor: 15.881

6.  Valley susceptibility of an interacting two-dimensional electron system.

Authors:  O Gunawan; Y P Shkolnikov; K Vakili; T Gokmen; E P De Poortere; M Shayegan
Journal:  Phys Rev Lett       Date:  2006-11-03       Impact factor: 9.161

7.  Valley-contrasting physics in graphene: magnetic moment and topological transport.

Authors:  Di Xiao; Wang Yao; Qian Niu
Journal:  Phys Rev Lett       Date:  2007-12-07       Impact factor: 9.161

8.  Graphene valley filter using a line defect.

Authors:  D Gunlycke; C T White
Journal:  Phys Rev Lett       Date:  2011-03-28       Impact factor: 9.161

9.  Emerging photoluminescence in monolayer MoS2.

Authors:  Andrea Splendiani; Liang Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi-Yung Chim; Giulia Galli; Feng Wang
Journal:  Nano Lett       Date:  2010-04-14       Impact factor: 11.189

10.  Atomically thin MoS₂: a new direct-gap semiconductor.

Authors:  Kin Fai Mak; Changgu Lee; James Hone; Jie Shan; Tony F Heinz
Journal:  Phys Rev Lett       Date:  2010-09-24       Impact factor: 9.161

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  234 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Condensed-matter physics: Polarized light boosts valleytronics.

Authors:  Kamran Behnia
Journal:  Nat Nanotechnol       Date:  2012-07-01       Impact factor: 39.213

3.  Quantum emission from hexagonal boron nitride monolayers.

Authors:  Toan Trong Tran; Kerem Bray; Michael J Ford; Milos Toth; Igor Aharonovich
Journal:  Nat Nanotechnol       Date:  2015-10-26       Impact factor: 39.213

Review 4.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

5.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

6.  Electrically tunable multiple Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials.

Authors:  Xiao-Yu Dong; Jian-Feng Wang; Rui-Xing Zhang; Wen-Hui Duan; Bang-Fen Zhu; Jorge O Sofo; Chao-Xing Liu
Journal:  Nat Commun       Date:  2015-10-13       Impact factor: 14.919

7.  Giant magneto-optical Raman effect in a layered transition metal compound.

Authors:  Jianting Ji; Anmin Zhang; Jiahe Fan; Yuesheng Li; Xiaoqun Wang; Jiandi Zhang; E W Plummer; Qingming Zhang
Journal:  Proc Natl Acad Sci U S A       Date:  2016-02-16       Impact factor: 11.205

8.  Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation.

Authors:  Yanling Wu; Qiong Wu; Fei Sun; Cai Cheng; Sheng Meng; Jimin Zhao
Journal:  Proc Natl Acad Sci U S A       Date:  2015-09-08       Impact factor: 11.205

9.  Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

Authors:  Wenzhuo Wu; Lei Wang; Yilei Li; Fan Zhang; Long Lin; Simiao Niu; Daniel Chenet; Xian Zhang; Yufeng Hao; Tony F Heinz; James Hone; Zhong Lin Wang
Journal:  Nature       Date:  2014-10-15       Impact factor: 49.962

10.  Highly anisotropic and robust excitons in monolayer black phosphorus.

Authors:  Xiaomu Wang; Aaron M Jones; Kyle L Seyler; Vy Tran; Yichen Jia; Huan Zhao; Han Wang; Li Yang; Xiaodong Xu; Fengnian Xia
Journal:  Nat Nanotechnol       Date:  2015-04-27       Impact factor: 39.213

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