Literature DB >> 21517409

Graphene valley filter using a line defect.

D Gunlycke1, C T White.   

Abstract

With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered according to which valley they occupy without the need to introduce confinement. The proposed valley filter is based on scattering off a recently observed line defect in graphene. Quantum transport calculations show that the line defect is semitransparent and that quasiparticles arriving at the line defect with a high angle of incidence are transmitted with a valley polarization near 100%.
© 2011 American Physical Society

Entities:  

Year:  2011        PMID: 21517409     DOI: 10.1103/PhysRevLett.106.136806

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  19 in total

1.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Polycrystalline graphene and other two-dimensional materials.

Authors:  Oleg V Yazyev; Yong P Chen
Journal:  Nat Nanotechnol       Date:  2014-08-17       Impact factor: 39.213

3.  Graphene: pushing the boundaries.

Authors:  Pulickel M Ajayan; Boris I Yakobson
Journal:  Nat Mater       Date:  2011-06       Impact factor: 43.841

4.  Coupling the valley degree of freedom to antiferromagnetic order.

Authors:  Xiao Li; Ting Cao; Qian Niu; Junren Shi; Ji Feng
Journal:  Proc Natl Acad Sci U S A       Date:  2013-02-22       Impact factor: 11.205

5.  Gated silicene as a tunable source of nearly 100% spin-polarized electrons.

Authors:  Wei-Feng Tsai; Cheng-Yi Huang; Tay-Rong Chang; Hsin Lin; Horng-Tay Jeng; A Bansil
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

6.  Effects of intervalley scattering on the transport properties in one-dimensional valleytronic devices.

Authors:  Jiaojiao Zhou; Shuguang Cheng; Wen-Long You; Hua Jiang
Journal:  Sci Rep       Date:  2016-03-16       Impact factor: 4.379

7.  Fano effect and bound state in continuum in electron transport through an armchair graphene nanoribbon with line defect.

Authors:  Wei-Jiang Gong; Xiao-Yan Sui; Yan Wang; Guo-Dong Yu; Xiao-Hui Chen
Journal:  Nanoscale Res Lett       Date:  2013-07-22       Impact factor: 4.703

8.  Retro reflection of electrons at the interface of bilayer graphene and superconductor.

Authors:  Yee Sin Ang; Zhongshui Ma; C Zhang
Journal:  Sci Rep       Date:  2012-12-21       Impact factor: 4.379

9.  Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces.

Authors:  Robert Drost; Shawulienu Kezilebieke; Mikko M Ervasti; Sampsa K Hämäläinen; Fabian Schulz; Ari Harju; Peter Liljeroth
Journal:  Sci Rep       Date:  2015-11-20       Impact factor: 4.379

10.  High I on/I off current ratio graphene field effect transistor: the role of line defect.

Authors:  Mohammad Hadi Tajarrod; Hassan Rasooli Saghai
Journal:  Beilstein J Nanotechnol       Date:  2015-10-23       Impact factor: 3.649

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