Literature DB >> 22706698

Control of valley polarization in monolayer MoS2 by optical helicity.

Kin Fai Mak1, Keliang He, Jie Shan, Tony F Heinz.   

Abstract

Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin. There are, however, other properties of charge carriers that might be exploited in new families of devices. In particular, if there are two or more minima in the conduction band (or maxima in the valence band) in momentum space, and if it is possible to confine charge carriers in one of these valleys, then it should be possible to make a valleytronic device. Valley polarization, as the selective population of one valley is designated, has been demonstrated using strain and magnetic fields, but neither of these approaches allows dynamic control. Here, we demonstrate that optical pumping with circularly polarized light can achieve complete dynamic valley polarization in monolayer MoS(2) (refs 11, 12), a two-dimensional non-centrosymmetric crystal with direct energy gaps at two valleys. Moreover, this polarization is retained for longer than 1 ns. Our results, and similar results by Zeng et al., demonstrate the viability of optical valley control and suggest the possibility of valley-based electronic and optoelectronic applications in MoS(2) monolayers.

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Year:  2012        PMID: 22706698     DOI: 10.1038/nnano.2012.96

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  14 in total

1.  Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field.

Authors:  Y P Shkolnikov; E P De Poortere; E Tutuc; M Shayegan
Journal:  Phys Rev Lett       Date:  2002-11-07       Impact factor: 9.161

2.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Observation of negatively charged excitons X- in semiconductor quantum wells.

Authors: 
Journal:  Phys Rev Lett       Date:  1993-09-13       Impact factor: 9.161

4.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

5.  Valley polarization in Si(100) at zero magnetic field.

Authors:  K Takashina; Y Ono; A Fujiwara; Y Takahashi; Y Hirayama
Journal:  Phys Rev Lett       Date:  2006-06-12       Impact factor: 9.161

6.  Valley susceptibility of an interacting two-dimensional electron system.

Authors:  O Gunawan; Y P Shkolnikov; K Vakili; T Gokmen; E P De Poortere; M Shayegan
Journal:  Phys Rev Lett       Date:  2006-11-03       Impact factor: 9.161

7.  Detection of valley polarization in graphene by a superconducting contact.

Authors:  A R Akhmerov; C W J Beenakker
Journal:  Phys Rev Lett       Date:  2007-04-12       Impact factor: 9.161

8.  Valley-contrasting physics in graphene: magnetic moment and topological transport.

Authors:  Di Xiao; Wang Yao; Qian Niu
Journal:  Phys Rev Lett       Date:  2007-12-07       Impact factor: 9.161

9.  Single-layer MoS2 transistors.

Authors:  B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal:  Nat Nanotechnol       Date:  2011-01-30       Impact factor: 39.213

10.  Emerging photoluminescence in monolayer MoS2.

Authors:  Andrea Splendiani; Liang Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi-Yung Chim; Giulia Galli; Feng Wang
Journal:  Nano Lett       Date:  2010-04-14       Impact factor: 11.189

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  270 in total

1.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Condensed-matter physics: Polarized light boosts valleytronics.

Authors:  Kamran Behnia
Journal:  Nat Nanotechnol       Date:  2012-07-01       Impact factor: 39.213

3.  Quantum emission from hexagonal boron nitride monolayers.

Authors:  Toan Trong Tran; Kerem Bray; Michael J Ford; Milos Toth; Igor Aharonovich
Journal:  Nat Nanotechnol       Date:  2015-10-26       Impact factor: 39.213

Review 4.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

5.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

6.  Giant magneto-optical Raman effect in a layered transition metal compound.

Authors:  Jianting Ji; Anmin Zhang; Jiahe Fan; Yuesheng Li; Xiaoqun Wang; Jiandi Zhang; E W Plummer; Qingming Zhang
Journal:  Proc Natl Acad Sci U S A       Date:  2016-02-16       Impact factor: 11.205

7.  Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

Authors:  Wenzhuo Wu; Lei Wang; Yilei Li; Fan Zhang; Long Lin; Simiao Niu; Daniel Chenet; Xian Zhang; Yufeng Hao; Tony F Heinz; James Hone; Zhong Lin Wang
Journal:  Nature       Date:  2014-10-15       Impact factor: 49.962

8.  Mobility engineering and a metal-insulator transition in monolayer MoS₂.

Authors:  Branimir Radisavljevic; Andras Kis
Journal:  Nat Mater       Date:  2013-06-23       Impact factor: 43.841

9.  Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.

Authors:  Sina Najmaei; Zheng Liu; Wu Zhou; Xiaolong Zou; Gang Shi; Sidong Lei; Boris I Yakobson; Juan-Carlos Idrobo; Pulickel M Ajayan; Jun Lou
Journal:  Nat Mater       Date:  2013-06-09       Impact factor: 43.841

10.  Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition.

Authors:  Berc Kalanyan; William A Kimes; Ryan Beams; Stephan J Stranick; Elias Garratt; Irina Kalish; Albert V Davydov; Ravindra K Kanjolia; James E Maslar
Journal:  Chem Mater       Date:  2017-07-12       Impact factor: 9.811

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