Literature DB >> 12485094

Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field.

Y P Shkolnikov1, E P De Poortere, E Tutuc, M Shayegan.   

Abstract

By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional electrons confined to AlAs quantum wells. The data reveal that, while the valleys are nearly degenerate in the absence of magnetic field, they split as a function of perpendicular magnetic field. The splitting appears to depend primarily on the magnitude of the perpendicular component of the magnetic field, suggesting electron-electron interaction as its origin.

Entities:  

Year:  2002        PMID: 12485094     DOI: 10.1103/PhysRevLett.89.226805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  10 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Generation, transport and detection of valley-polarized electrons in diamond.

Authors:  Jan Isberg; Markus Gabrysch; Johan Hammersberg; Saman Majdi; Kiran Kumar Kovi; Daniel J Twitchen
Journal:  Nat Mater       Date:  2013-07-14       Impact factor: 43.841

4.  Valley- and spin-polarized Landau levels in monolayer WSe2.

Authors:  Zefang Wang; Jie Shan; Kin Fai Mak
Journal:  Nat Nanotechnol       Date:  2016-10-31       Impact factor: 39.213

5.  Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

Authors:  Shuren Lin; Alexandra Carvalho; Shancheng Yan; Roger Li; Sujung Kim; Aleksandr Rodin; Lídia Carvalho; Emory M Chan; Xi Wang; Antonio H Castro Neto; Jie Yao
Journal:  Nat Commun       Date:  2018-04-13       Impact factor: 14.919

6.  Detection of thermodynamic "valley noise" in monolayer semiconductors: Access to intrinsic valley relaxation time scales.

Authors:  M Goryca; N P Wilson; P Dey; X Xu; S A Crooker
Journal:  Sci Adv       Date:  2019-03-01       Impact factor: 14.136

7.  Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion.

Authors:  Can Yesilyurt; Zhuo Bin Siu; Seng Ghee Tan; Gengchiau Liang; Shengyuan A Yang; Mansoor B A Jalil
Journal:  Sci Rep       Date:  2019-03-14       Impact factor: 4.379

8.  Valley-selective directional emission from a transition-metal dichalcogenide monolayer mediated by a plasmonic nanoantenna.

Authors:  Haitao Chen; Mingkai Liu; Lei Xu; Dragomir N Neshev
Journal:  Beilstein J Nanotechnol       Date:  2018-03-02       Impact factor: 3.649

9.  Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

Authors:  Yuting Yang; Hua Jiang; Zhi Hong Hang
Journal:  Sci Rep       Date:  2018-01-25       Impact factor: 4.379

10.  Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors.

Authors:  Yuhei Miyauchi; Satoru Konabe; Feijiu Wang; Wenjin Zhang; Alexander Hwang; Yusuke Hasegawa; Lizhong Zhou; Shinichiro Mouri; Minglin Toh; Goki Eda; Kazunari Matsuda
Journal:  Nat Commun       Date:  2018-07-03       Impact factor: 14.919

  10 in total

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