Literature DB >> 18233399

Valley-contrasting physics in graphene: magnetic moment and topological transport.

Di Xiao1, Wang Yao, Qian Niu.   

Abstract

We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the valley-based electronics applications.

Entities:  

Year:  2007        PMID: 18233399     DOI: 10.1103/PhysRevLett.99.236809

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  88 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Condensed-matter physics: Polarized light boosts valleytronics.

Authors:  Kamran Behnia
Journal:  Nat Nanotechnol       Date:  2012-07-01       Impact factor: 39.213

Review 4.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

5.  Topological Bloch bands in graphene superlattices.

Authors:  Justin C W Song; Polnop Samutpraphoot; Leonid S Levitov
Journal:  Proc Natl Acad Sci U S A       Date:  2015-08-18       Impact factor: 11.205

6.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

7.  Giant magneto-optical Raman effect in a layered transition metal compound.

Authors:  Jianting Ji; Anmin Zhang; Jiahe Fan; Yuesheng Li; Xiaoqun Wang; Jiandi Zhang; E W Plummer; Qingming Zhang
Journal:  Proc Natl Acad Sci U S A       Date:  2016-02-16       Impact factor: 11.205

8.  Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation.

Authors:  Yanling Wu; Qiong Wu; Fei Sun; Cai Cheng; Sheng Meng; Jimin Zhao
Journal:  Proc Natl Acad Sci U S A       Date:  2015-09-08       Impact factor: 11.205

9.  Polycrystalline graphene and other two-dimensional materials.

Authors:  Oleg V Yazyev; Yong P Chen
Journal:  Nat Nanotechnol       Date:  2014-08-17       Impact factor: 39.213

10.  Gated silicene as a tunable source of nearly 100% spin-polarized electrons.

Authors:  Wei-Feng Tsai; Cheng-Yi Huang; Tay-Rong Chang; Hsin Lin; Horng-Tay Jeng; A Bansil
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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