Literature DB >> 17155564

Valley susceptibility of an interacting two-dimensional electron system.

O Gunawan1, Y P Shkolnikov, K Vakili, T Gokmen, E P De Poortere, M Shayegan.   

Abstract

We report direct measurements of the valley susceptibility, the change of valley population in response to an applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.

Entities:  

Year:  2006        PMID: 17155564     DOI: 10.1103/PhysRevLett.97.186404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  23 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

4.  Generation, transport and detection of valley-polarized electrons in diamond.

Authors:  Jan Isberg; Markus Gabrysch; Johan Hammersberg; Saman Majdi; Kiran Kumar Kovi; Daniel J Twitchen
Journal:  Nat Mater       Date:  2013-07-14       Impact factor: 43.841

5.  Optical generation of excitonic valley coherence in monolayer WSe2.

Authors:  Aaron M Jones; Hongyi Yu; Nirmal J Ghimire; Sanfeng Wu; Grant Aivazian; Jason S Ross; Bo Zhao; Jiaqiang Yan; David G Mandrus; Di Xiao; Wang Yao; Xiaodong Xu
Journal:  Nat Nanotechnol       Date:  2013-08-11       Impact factor: 39.213

6.  Coupling the valley degree of freedom to antiferromagnetic order.

Authors:  Xiao Li; Ting Cao; Qian Niu; Junren Shi; Ji Feng
Journal:  Proc Natl Acad Sci U S A       Date:  2013-02-22       Impact factor: 11.205

7.  Spatially resolving valley quantum interference of a donor in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Mater       Date:  2014-04-06       Impact factor: 43.841

8.  Valley- and spin-polarized Landau levels in monolayer WSe2.

Authors:  Zefang Wang; Jie Shan; Kin Fai Mak
Journal:  Nat Nanotechnol       Date:  2016-10-31       Impact factor: 39.213

9.  Valley-selective circular dichroism of monolayer molybdenum disulphide.

Authors:  Ting Cao; Gang Wang; Wenpeng Han; Huiqi Ye; Chuanrui Zhu; Junren Shi; Qian Niu; Pingheng Tan; Enge Wang; Baoli Liu; Ji Feng
Journal:  Nat Commun       Date:  2012-06-06       Impact factor: 14.919

10.  Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.

Authors:  Yifei Yu; Chun Li; Yi Liu; Liqin Su; Yong Zhang; Linyou Cao
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

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