Literature DB >> 16803388

Valley polarization in Si(100) at zero magnetic field.

K Takashina1, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama.   

Abstract

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.

Entities:  

Year:  2006        PMID: 16803388     DOI: 10.1103/PhysRevLett.96.236801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  10 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Generation, transport and detection of valley-polarized electrons in diamond.

Authors:  Jan Isberg; Markus Gabrysch; Johan Hammersberg; Saman Majdi; Kiran Kumar Kovi; Daniel J Twitchen
Journal:  Nat Mater       Date:  2013-07-14       Impact factor: 43.841

3.  Coupling the valley degree of freedom to antiferromagnetic order.

Authors:  Xiao Li; Ting Cao; Qian Niu; Junren Shi; Ji Feng
Journal:  Proc Natl Acad Sci U S A       Date:  2013-02-22       Impact factor: 11.205

4.  Valley-selective circular dichroism of monolayer molybdenum disulphide.

Authors:  Ting Cao; Gang Wang; Wenpeng Han; Huiqi Ye; Chuanrui Zhu; Junren Shi; Qian Niu; Pingheng Tan; Enge Wang; Baoli Liu; Ji Feng
Journal:  Nat Commun       Date:  2012-06-06       Impact factor: 14.919

5.  Valley polarization assisted spin polarization in two dimensions.

Authors:  V T Renard; B A Piot; X Waintal; G Fleury; D Cooper; Y Niida; D Tregurtha; A Fujiwara; Y Hirayama; K Takashina
Journal:  Nat Commun       Date:  2015-06-01       Impact factor: 14.919

6.  Electric tuning of direct-indirect optical transitions in silicon.

Authors:  J Noborisaka; K Nishiguchi; A Fujiwara
Journal:  Sci Rep       Date:  2014-11-07       Impact factor: 4.379

7.  Concepts of ferrovalley material and anomalous valley Hall effect.

Authors:  Wen-Yi Tong; Shi-Jing Gong; Xiangang Wan; Chun-Gang Duan
Journal:  Nat Commun       Date:  2016-12-16       Impact factor: 14.919

8.  Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

Authors:  Shuren Lin; Alexandra Carvalho; Shancheng Yan; Roger Li; Sujung Kim; Aleksandr Rodin; Lídia Carvalho; Emory M Chan; Xi Wang; Antonio H Castro Neto; Jie Yao
Journal:  Nat Commun       Date:  2018-04-13       Impact factor: 14.919

9.  Metallic behaviour in SOI quantum wells with strong intervalley scattering.

Authors:  V T Renard; I Duchemin; Y Niida; A Fujiwara; Y Hirayama; K Takashina
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

10.  3d Transition Metal Adsorption Induced the valley-polarized Anomalous Hall Effect in Germanene.

Authors:  P Zhou; L Z Sun
Journal:  Sci Rep       Date:  2016-06-17       Impact factor: 4.379

  10 in total

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