Literature DB >> 22153369

In search of a consensus model of the resting state of a voltage-sensing domain.

Ernesto Vargas1, Francisco Bezanilla, Benoît Roux.   

Abstract

Voltage-sensing domains (VSDs) undergo conformational changes in response to the membrane potential and are the critical structural modules responsible for the activation of voltage-gated channels. Structural information about the key conformational states underlying voltage activation is currently incomplete. Through the use of experimentally determined residue-residue interactions as structural constraints, we determine and refine a model of the Kv channel VSD in the resting conformation. The resulting structural model is in broad agreement with results that originate from various labs using different techniques, indicating the emergence of a consensus for the structural basis of voltage sensing.
Copyright © 2011 Elsevier Inc. All rights reserved.

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Year:  2011        PMID: 22153369      PMCID: PMC3268064          DOI: 10.1016/j.neuron.2011.09.024

Source DB:  PubMed          Journal:  Neuron        ISSN: 0896-6273            Impact factor:   17.173


  57 in total

1.  Atomic scale movement of the voltage-sensing region in a potassium channel measured via spectroscopy.

Authors:  A Cha; G E Snyder; P R Selvin; F Bezanilla
Journal:  Nature       Date:  1999-12-16       Impact factor: 49.962

2.  Two atomic constraints unambiguously position the S4 segment relative to S1 and S2 segments in the closed state of Shaker K channel.

Authors:  Fabiana V Campos; Baron Chanda; Benoît Roux; Francisco Bezanilla
Journal:  Proc Natl Acad Sci U S A       Date:  2007-04-30       Impact factor: 11.205

3.  Structure of the transmembrane regions of a bacterial cyclic nucleotide-regulated channel.

Authors:  Gina M Clayton; Steve Altieri; Lise Heginbotham; Vinzenz M Unger; João H Morais-Cabral
Journal:  Proc Natl Acad Sci U S A       Date:  2008-01-23       Impact factor: 11.205

4.  Removal of phospho-head groups of membrane lipids immobilizes voltage sensors of K+ channels.

Authors:  Yanping Xu; Yajamana Ramu; Zhe Lu
Journal:  Nature       Date:  2008-02-14       Impact factor: 49.962

5.  Atomic structure of a voltage-dependent K+ channel in a lipid membrane-like environment.

Authors:  Stephen B Long; Xiao Tao; Ernest B Campbell; Roderick MacKinnon
Journal:  Nature       Date:  2007-11-15       Impact factor: 49.962

6.  Atomic constraints between the voltage sensor and the pore domain in a voltage-gated K+ channel of known structure.

Authors:  Anthony Lewis; Vishwanath Jogini; Lydia Blachowicz; Muriel Lainé; Benoît Roux
Journal:  J Gen Physiol       Date:  2008-06       Impact factor: 4.086

7.  Dynamics of the Kv1.2 voltage-gated K+ channel in a membrane environment.

Authors:  Vishwanath Jogini; Benoît Roux
Journal:  Biophys J       Date:  2007-08-17       Impact factor: 4.033

8.  Extracellular Mg(2+) modulates slow gating transitions and the opening of Drosophila ether-à-Go-Go potassium channels.

Authors:  C Y Tang; F Bezanilla; D M Papazian
Journal:  J Gen Physiol       Date:  2000-03       Impact factor: 4.086

9.  Voltage-dependent structural interactions in the Shaker K(+) channel.

Authors:  S K Tiwari-Woodruff; M A Lin; C T Schulteis; D M Papazian
Journal:  J Gen Physiol       Date:  2000-02       Impact factor: 4.086

10.  How does a voltage sensor interact with a lipid bilayer? Simulations of a potassium channel domain.

Authors:  Zara A Sands; Mark S P Sansom
Journal:  Structure       Date:  2007-02       Impact factor: 5.006

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  66 in total

1.  Tracking a complete voltage-sensor cycle with metal-ion bridges.

Authors:  Ulrike Henrion; Jakob Renhorn; Sara I Börjesson; Erin M Nelson; Christine S Schwaiger; Pär Bjelkmar; Björn Wallner; Erik Lindahl; Fredrik Elinder
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-25       Impact factor: 11.205

2.  A theoretical model for calculating voltage sensitivity of ion channels and the application on Kv1.2 potassium channel.

Authors:  Huaiyu Yang; Zhaobing Gao; Ping Li; Kunqian Yu; Ye Yu; Tian-Le Xu; Min Li; Hualiang Jiang
Journal:  Biophys J       Date:  2012-04-18       Impact factor: 4.033

3.  Hydrophobic plug functions as a gate in voltage-gated proton channels.

Authors:  Adam Chamberlin; Feng Qiu; Santiago Rebolledo; Yibo Wang; Sergei Y Noskov; H Peter Larsson
Journal:  Proc Natl Acad Sci U S A       Date:  2013-12-30       Impact factor: 11.205

4.  S3-S4 linker length modulates the relaxed state of a voltage-gated potassium channel.

Authors:  Michael F Priest; Jérôme J Lacroix; Carlos A Villalba-Galea; Francisco Bezanilla
Journal:  Biophys J       Date:  2013-11-19       Impact factor: 4.033

5.  A limited 4 Å radial displacement of the S4-S5 linker is sufficient for internal gate closing in Kv channels.

Authors:  Élise Faure; Greg Starek; Hugo McGuire; Simon Bernèche; Rikard Blunck
Journal:  J Biol Chem       Date:  2012-09-27       Impact factor: 5.157

6.  Domain and interdomain energetics underlying gating in Shaker-type Kv channels.

Authors:  Alexander Peyser; Dirk Gillespie; Roland Roth; Wolfgang Nonner
Journal:  Biophys J       Date:  2014-10-21       Impact factor: 4.033

7.  Electric fingerprint of voltage sensor domains.

Authors:  Caio S Souza; Cristiano Amaral; Werner Treptow
Journal:  Proc Natl Acad Sci U S A       Date:  2014-11-24       Impact factor: 11.205

8.  Gating Charge Calculations by Computational Electrophysiology Simulations.

Authors:  Jan-Philipp Machtens; Rodolfo Briones; Claudia Alleva; Bert L de Groot; Christoph Fahlke
Journal:  Biophys J       Date:  2017-04-11       Impact factor: 4.033

9.  S4-S5 linker movement during activation and inactivation in voltage-gated K+ channels.

Authors:  Tanja Kalstrup; Rikard Blunck
Journal:  Proc Natl Acad Sci U S A       Date:  2018-06-29       Impact factor: 11.205

10.  Mapping the gating and permeation pathways in the voltage-gated proton channel Hv1.

Authors:  Adam Chamberlin; Feng Qiu; Yibo Wang; Sergei Y Noskov; H Peter Larsson
Journal:  J Mol Biol       Date:  2014-12-04       Impact factor: 5.469

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