| Literature DB >> 25723924 |
Karol Nass1, Lutz Foucar1, Thomas R M Barends1, Elisabeth Hartmann1, Sabine Botha1, Robert L Shoeman1, R Bruce Doak1, Roberto Alonso-Mori2, Andrew Aquila3, Saša Bajt4, Anton Barty5, Richard Bean5, Kenneth R Beyerlein5, Maike Bublitz6, Nikolaj Drachmann6, Jonas Gregersen6, H Olof Jönsson7, Wolfgang Kabsch1, Stephan Kassemeyer1, Jason E Koglin2, Michael Krumrey8, Daniel Mattle6, Marc Messerschmidt2, Poul Nissen6, Linda Reinhard6, Oleg Sitsel6, Dimosthenis Sokaras2, Garth J Williams2, Stefan Hau-Riege9, Nicusor Timneanu7, Carl Caleman5, Henry N Chapman5, Sébastien Boutet2, Ilme Schlichting1.
Abstract
Proteins that contain metal cofactors are expected to be highly radiation sensitive since the degree of X-ray absorption correlates with the presence of high-atomic-number elements and X-ray energy. To explore the effects of local damage in serial femtosecond crystallography (SFX), Clostridium ferredoxin was used as a model system. The protein contains two [4Fe-4S] clusters that serve as sensitive probes for radiation-induced electronic and structural changes. High-dose room-temperature SFX datasets were collected at the Linac Coherent Light Source of ferredoxin microcrystals. Difference electron density maps calculated from high-dose SFX and synchrotron data show peaks at the iron positions of the clusters, indicative of decrease of atomic scattering factors due to ionization. The electron density of the two [4Fe-4S] clusters differs in the FEL data, but not in the synchrotron data. Since the clusters differ in their detailed architecture, this observation is suggestive of an influence of the molecular bonding and geometry on the atomic displacement dynamics following initial photoionization. The experiments are complemented by plasma code calculations.Entities:
Keywords: SFX; free-electron laser; metalloprotein; protein crystallography; radiation damage; serial femtosecond crystallography
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Year: 2015 PMID: 25723924 DOI: 10.1107/S1600577515002349
Source DB: PubMed Journal: J Synchrotron Radiat ISSN: 0909-0495 Impact factor: 2.616