Mats Persson1,2, Adam Wang2, Norbert J Pelc1,2,3. 1. Stanford University, Department of Bioengineering, Stanford, California, United States. 2. Stanford University, Department of Radiology, Stanford, California, United States. 3. Stanford University, Department of Electrical Engineering, Stanford, California, United States.
Abstract
Purpose: Developing photon-counting CT detectors requires understanding the impact of parameters, such as converter material, thickness, and pixel size. We apply a linear-systems framework, incorporating spatial and energy resolution, to study realistic silicon (Si) and cadmium telluride (CdTe) detectors at a low count rate. Approach: We compared CdTe detector designs with 0.5 × 0.5 mm 2 and 0.225 × 0.225 mm 2 pixels and Si detector designs with 0.5 × 0.5 mm 2 pixels of 30 and 60 mm active thickness, with and without tungsten scatter blockers. Monte-Carlo simulations of photon transport were used together with Gaussian charge sharing models fitted to published data. Results: For detection in a 300-mm-thick object at 120 kVp, the 0.5- and 0.225-mm pixel CdTe systems have 28% to 41% and 5% to 29% higher detective quantum efficiency (DQE), respectively, than the 60-mm Si system with tungsten, whereas the corresponding numbers for two-material decomposition are 2% lower to 11% higher DQE and 31% to 54% lower DQE compared to Si. We also show that combining these detectors with dual-spectrum acquisition is beneficial. Conclusions: In the low-count-rate regime, CdTe detector systems outperform the Si systems for detection tasks, whereas silicon outperforms one or both of the CdTe systems for material decomposition.
Purpose: Developing photon-counting CT detectors requires understanding the impact of parameters, such as converter material, thickness, and pixel size. We apply a linear-systems framework, incorporating spatial and energy resolution, to study realistic silicon (Si) and cadmium telluride (CdTe) detectors at a low count rate. Approach: We compared CdTe detector designs with 0.5 × 0.5 mm 2 and 0.225 × 0.225 mm 2 pixels and Si detector designs with 0.5 × 0.5 mm 2 pixels of 30 and 60 mm active thickness, with and without tungsten scatter blockers. Monte-Carlo simulations of photon transport were used together with Gaussian charge sharing models fitted to published data. Results: For detection in a 300-mm-thick object at 120 kVp, the 0.5- and 0.225-mm pixel CdTe systems have 28% to 41% and 5% to 29% higher detective quantum efficiency (DQE), respectively, than the 60-mm Si system with tungsten, whereas the corresponding numbers for two-material decomposition are 2% lower to 11% higher DQE and 31% to 54% lower DQE compared to Si. We also show that combining these detectors with dual-spectrum acquisition is beneficial. Conclusions: In the low-count-rate regime, CdTe detector systems outperform the Si systems for detection tasks, whereas silicon outperforms one or both of the CdTe systems for material decomposition.
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