Literature DB >> 31634903

Imaging work and dissipation in the quantum Hall state in graphene.

A Marguerite1, J Birkbeck2, A Aharon-Steinberg1, D Halbertal1,3, K Bagani1, I Marcus1, Y Myasoedov1, A K Geim2, D J Perello4, E Zeldov5.   

Abstract

Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations1,2. Dissipationless topologically protected states are therefore of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often susceptible to various dissipative mechanisms, which are difficult to study directly because of their microscopic origins. Here we use scanning nanothermometry3 to visualize and investigate the microscopic mechanisms that undermine dissipationless transport in the quantum Hall state in graphene. Simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries as a result of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work-generating process that we image directly, which involves elastic tunnelling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. By contrast, the heat and entropy generation process-which we visualize independently-occurs nonlocally upon resonant inelastic scattering from single atomic defects at graphene edges, and does not affect transport. Our findings provide an insight into the mechanisms that conceal the true topological protection, and suggest routes towards engineering more robust quantum states for device applications.

Entities:  

Year:  2019        PMID: 31634903     DOI: 10.1038/s41586-019-1704-3

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  24 in total

1.  Enhanced carrier transport along edges of graphene devices.

Authors:  Jungseok Chae; Suyong Jung; Sungjong Woo; Hongwoo Baek; Jeonghoon Ha; Young Jae Song; Young-Woo Son; Nikolai B Zhitenev; Joseph A Stroscio; Young Kuk
Journal:  Nano Lett       Date:  2012-03-23       Impact factor: 11.189

2.  A scanning superconducting quantum interference device with single electron spin sensitivity.

Authors:  Denis Vasyukov; Yonathan Anahory; Lior Embon; Dorri Halbertal; Jo Cuppens; Lior Neeman; Amit Finkler; Yehonathan Segev; Yuri Myasoedov; Michael L Rappaport; Martin E Huber; Eli Zeldov
Journal:  Nat Nanotechnol       Date:  2013-09-01       Impact factor: 39.213

3.  Tuning energy relaxation along quantum Hall channels.

Authors:  C Altimiras; H le Sueur; U Gennser; A Cavanna; D Mailly; F Pierre
Journal:  Phys Rev Lett       Date:  2010-11-23       Impact factor: 9.161

4.  Nanoscale thermal imaging of dissipation in quantum systems.

Authors:  D Halbertal; J Cuppens; M Ben Shalom; L Embon; N Shadmi; Y Anahory; H R Naren; J Sarkar; A Uri; Y Ronen; Y Myasoedov; L S Levitov; E Joselevich; A K Geim; E Zeldov
Journal:  Nature       Date:  2016-11-17       Impact factor: 49.962

5.  Signatures of a Nonthermal Metastable State in Copropagating Quantum Hall Edge Channels.

Authors:  Kosuke Itoh; Ryo Nakazawa; Tomoaki Ota; Masayuki Hashisaka; Koji Muraki; Toshimasa Fujisawa
Journal:  Phys Rev Lett       Date:  2018-05-11       Impact factor: 9.161

6.  Imaging resonant dissipation from individual atomic defects in graphene.

Authors:  Dorri Halbertal; Moshe Ben Shalom; Aviram Uri; Kousik Bagani; Alexander Y Meltzer; Ido Marcus; Yuri Myasoedov; John Birkbeck; Leonid S Levitov; Andre K Geim; Eli Zeldov
Journal:  Science       Date:  2017-12-08       Impact factor: 47.728

7.  Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices.

Authors:  Yong-Tao Cui; Bo Wen; Eric Y Ma; Georgi Diankov; Zheng Han; Francois Amet; Takashi Taniguchi; Kenji Watanabe; David Goldhaber-Gordon; Cory R Dean; Zhi-Xun Shen
Journal:  Phys Rev Lett       Date:  2016-10-27       Impact factor: 9.161

8.  Towards a quantum resistance standard based on epitaxial graphene.

Authors:  Alexander Tzalenchuk; Samuel Lara-Avila; Alexei Kalaboukhov; Sara Paolillo; Mikael Syväjärvi; Rositza Yakimova; Olga Kazakova; T J B M Janssen; Vladimir Fal'ko; Sergey Kubatkin
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

9.  Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry.

Authors:  Eric Yue Ma; M Reyes Calvo; Jing Wang; Biao Lian; Mathias Mühlbauer; Christoph Brüne; Yong-Tao Cui; Keji Lai; Worasom Kundhikanjana; Yongliang Yang; Matthias Baenninger; Markus König; Christopher Ames; Hartmut Buhmann; Philipp Leubner; Laurens W Molenkamp; Shou-Cheng Zhang; David Goldhaber-Gordon; Michael A Kelly; Zhi-Xun Shen
Journal:  Nat Commun       Date:  2015-05-26       Impact factor: 14.919

10.  Visualisation of edge effects in side-gated graphene nanodevices.

Authors:  Vishal Panchal; Arseniy Lartsev; Alessandra Manzin; Rositza Yakimova; Alexander Tzalenchuk; Olga Kazakova
Journal:  Sci Rep       Date:  2014-07-30       Impact factor: 4.379

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  2 in total

1.  Long-range nontopological edge currents in charge-neutral graphene.

Authors:  A Aharon-Steinberg; A Marguerite; D J Perello; K Bagani; T Holder; Y Myasoedov; L S Levitov; A K Geim; E Zeldov
Journal:  Nature       Date:  2021-05-26       Impact factor: 49.962

2.  Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck.

Authors:  Qianchun Weng; Le Yang; Zhenghua An; Pingping Chen; Alexander Tzalenchuk; Wei Lu; Susumu Komiyama
Journal:  Nat Commun       Date:  2021-08-06       Impact factor: 14.919

  2 in total

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