Literature DB >> 22429202

Enhanced carrier transport along edges of graphene devices.

Jungseok Chae1, Suyong Jung, Sungjong Woo, Hongwoo Baek, Jeonghoon Ha, Young Jae Song, Young-Woo Son, Nikolai B Zhitenev, Joseph A Stroscio, Young Kuk.   

Abstract

The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.
© 2012 American Chemical Society

Entities:  

Year:  2012        PMID： 22429202     DOI： 10.1021/nl2041222

Source DB:  PubMed          Journal:  Nano Lett        ISSN： 1530-6984            Impact factor:   11.189


  7 in total

1.  Low-resistance spin injection into silicon using graphene tunnel barriers.

Authors:  O M J van 't Erve; A L Friedman; E Cobas; C H Li; J T Robinson; B T Jonker
Journal:  Nat Nanotechnol       Date:  2012-09-30       Impact factor: 39.213

2.  Imaging work and dissipation in the quantum Hall state in graphene.

Authors:  A Marguerite; J Birkbeck; A Aharon-Steinberg; D Halbertal; K Bagani; I Marcus; Y Myasoedov; A K Geim; D J Perello; E Zeldov
Journal:  Nature       Date:  2019-10-21       Impact factor: 49.962

3.  Nanoscale Probing of Interaction in Atomically Thin Layered Materials.

Authors:  Hossein Rokni; Wei Lu
Journal:  ACS Cent Sci       Date:  2018-02-12       Impact factor: 14.553

4.  Layer-by-Layer Insight into Electrostatic Charge Distribution of Few-Layer Graphene.

Authors:  Hossein Rokni; Wei Lu
Journal:  Sci Rep       Date:  2017-02-21       Impact factor: 4.379

5.  Edge currents shunt the insulating bulk in gapped graphene.

Authors:  M J Zhu; A V Kretinin; M D Thompson; D A Bandurin; S Hu; G L Yu; J Birkbeck; A Mishchenko; I J Vera-Marun; K Watanabe; T Taniguchi; M Polini; J R Prance; K S Novoselov; A K Geim; M Ben Shalom
Journal:  Nat Commun       Date:  2017-02-17       Impact factor: 14.919

6.  Long-range nontopological edge currents in charge-neutral graphene.

Authors:  A Aharon-Steinberg; A Marguerite; D J Perello; K Bagani; T Holder; Y Myasoedov; L S Levitov; A K Geim; E Zeldov
Journal:  Nature       Date:  2021-05-26       Impact factor: 49.962

7.  Visualisation of edge effects in side-gated graphene nanodevices.

Authors:  Vishal Panchal; Arseniy Lartsev; Alessandra Manzin; Rositza Yakimova; Alexander Tzalenchuk; Olga Kazakova
Journal:  Sci Rep       Date:  2014-07-30       Impact factor: 4.379
  7 in total

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