Literature DB >> 34040212

Long-range nontopological edge currents in charge-neutral graphene.

A Aharon-Steinberg1, A Marguerite1, D J Perello2, K Bagani1, T Holder1, Y Myasoedov1, L S Levitov3, A K Geim2, E Zeldov4.   

Abstract

Van der Waals heterostructures display numerous unique electronic properties. Nonlocal measurements, wherein a voltage is measured at contacts placed far away from the expected classical flow of charge carriers, have been widely used in the search for novel transport mechanisms, including dissipationless spin and valley transport1-9, topological charge-neutral currents10-12, hydrodynamic flows13 and helical edge modes14-16. Monolayer1-5,10,15-19, bilayer9,11,14,20 and few-layer21 graphene, transition-metal dichalcogenides6,7 and moiré superlattices8,10,12 have been found to display pronounced nonlocal effects. However, the origin of these effects is hotly debated3,11,17,22-24. Graphene, in particular, exhibits giant nonlocality at charge neutrality1,15-19, a striking behaviour that has attracted competing explanations. Using a superconducting quantum interference device on a tip (SQUID-on-tip) for nanoscale thermal and scanning gate imaging25, here we demonstrate that the commonly occurring charge accumulation at graphene edges23,26-31 leads to giant nonlocality, producing narrow conductive channels that support long-range currents. Unexpectedly, although the edge conductance has little effect on the current flow in zero magnetic field, it leads to field-induced decoupling between edge and bulk transport at moderate fields. The resulting giant nonlocality at charge neutrality and away from it produces exotic flow patterns that are sensitive to edge disorder, in which charges can flow against the global electric field. The observed one-dimensional edge transport is generic and nontopological and is expected to support nonlocal transport in many electronic systems, offering insight into the numerous controversies and linking them to long-range guided electronic states at system edges.

Entities:  

Year:  2021        PMID: 34040212     DOI: 10.1038/s41586-021-03501-7

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  41 in total

1.  Negative local resistance caused by viscous electron backflow in graphene.

Authors:  D A Bandurin; I Torre; R Krishna Kumar; M Ben Shalom; A Tomadin; A Principi; G H Auton; E Khestanova; K S Novoselov; I V Grigorieva; L A Ponomarenko; A K Geim; M Polini
Journal:  Science       Date:  2016-02-11       Impact factor: 47.728

2.  Giant nonlocality near the Dirac point in graphene.

Authors:  D A Abanin; S V Morozov; L A Ponomarenko; R V Gorbachev; A S Mayorov; M I Katsnelson; K Watanabe; T Taniguchi; K S Novoselov; L S Levitov; A K Geim
Journal:  Science       Date:  2011-04-15       Impact factor: 47.728

3.  Detecting topological currents in graphene superlattices.

Authors:  R V Gorbachev; J C W Song; G L Yu; A V Kretinin; F Withers; Y Cao; A Mishchenko; I V Grigorieva; K S Novoselov; L S Levitov; A K Geim
Journal:  Science       Date:  2014-09-11       Impact factor: 47.728

4.  Observation of Time-Reversal Invariant Helical Edge-Modes in Bilayer Graphene/WSe2 Heterostructure.

Authors:  Priya Tiwari; Saurabh Kumar Srivastav; Sujay Ray; Tanmoy Das; Aveek Bid
Journal:  ACS Nano       Date:  2020-12-30       Impact factor: 15.881

5.  Charge Neutral Current Generation in a Spontaneous Quantum Hall Antiferromagnet.

Authors:  Miuko Tanaka; Yuya Shimazaki; Ivan Valerievich Borzenets; Kenji Watanabe; Takashi Taniguchi; Seigo Tarucha; Michihisa Yamamoto
Journal:  Phys Rev Lett       Date:  2021-01-08       Impact factor: 9.161

6.  Strong interfacial exchange field in the graphene/EuS heterostructure.

Authors:  Peng Wei; Sunwoo Lee; Florian Lemaitre; Lucas Pinel; Davide Cutaia; Wujoon Cha; Ferhat Katmis; Yu Zhu; Donald Heiman; James Hone; Jagadeesh S Moodera; Ching-Tzu Chen
Journal:  Nat Mater       Date:  2016-03-28       Impact factor: 43.841

7.  Helical quantum Hall phase in graphene on SrTiO3.

Authors:  Louis Veyrat; Corentin Déprez; Alexis Coissard; Xiaoxi Li; Frédéric Gay; Kenji Watanabe; Takashi Taniguchi; Zheng Han; Benjamin A Piot; Hermann Sellier; Benjamin Sacépé
Journal:  Science       Date:  2020-02-14       Impact factor: 47.728

8.  Intrinsic valley Hall transport in atomically thin MoS2.

Authors:  Zefei Wu; Benjamin T Zhou; Xiangbin Cai; Patrick Cheung; Gui-Bin Liu; Meizhen Huang; Jiangxiazi Lin; Tianyi Han; Liheng An; Yuanwei Wang; Shuigang Xu; Gen Long; Chun Cheng; Kam Tuen Law; Fan Zhang; Ning Wang
Journal:  Nat Commun       Date:  2019-02-05       Impact factor: 14.919

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