| Literature DB >> 29141137 |
Hua Yu1, Mengzhou Liao1, Wenjuan Zhao1, Guodong Liu1, X J Zhou1, Zheng Wei1, Xiaozhi Xu2, Kaihui Liu2,3, Zonghai Hu2,3, Ke Deng4, Shuyun Zhou4, Jin-An Shi1, Lin Gu1, Cheng Shen1, Tingting Zhang1, Luojun Du1,5, Li Xie1, Jianqi Zhu1, Wei Chen6, Rong Yang1,7, Dongxia Shi1,7, Guangyu Zhang1,3,7.
Abstract
Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS2 films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.Keywords: epitaxial growth; monolayer molybdenum disulfide; oriented; transfer; wafer-scale
Year: 2017 PMID： 29141137 DOI： 10.1021/acsnano.7b03819
Source DB: PubMed Journal: ACS Nano ISSN： 1936-0851 Impact factor: 15.881