Literature DB >> 32188941

General synthesis of two-dimensional van der Waals heterostructure arrays.

Jia Li1, Xiangdong Yang1, Yang Liu2, Bolong Huang3, Ruixia Wu1, Zhengwei Zhang1, Bei Zhao1, Huifang Ma1, Weiqi Dang1, Zheng Wei4, Kai Wang5, Zhaoyang Lin2, Xingxu Yan6, Mingzi Sun3, Bo Li1,7, Xiaoqing Pan6,8, Jun Luo5, Guangyu Zhang4, Yuan Liu1,7, Yu Huang9, Xidong Duan10, Xiangfeng Duan11.   

Abstract

Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest1-4. However, most vdWHs reported so far  are created by an arduous micromechanical exfoliation and manual restacking process5, which-although versatile for proof-of-concept demonstrations6-16 and fundamental studies17-30-is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moiré superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices.

Entities:  

Year:  2020        PMID: 32188941     DOI: 10.1038/s41586-020-2098-y

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  46 in total

1.  Field-effect tunneling transistor based on vertical graphene heterostructures.

Authors:  L Britnell; R V Gorbachev; R Jalil; B D Belle; F Schedin; A Mishchenko; T Georgiou; M I Katsnelson; L Eaves; S V Morozov; N M R Peres; J Leist; A K Geim; K S Novoselov; L A Ponomarenko
Journal:  Science       Date:  2012-02-02       Impact factor: 47.728

2.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

3.  Van der Waals heterostructures.

Authors:  A K Geim; I V Grigorieva
Journal:  Nature       Date:  2013-07-25       Impact factor: 49.962

Review 4.  Van der Waals integration before and beyond two-dimensional materials.

Authors:  Yuan Liu; Yu Huang; Xiangfeng Duan
Journal:  Nature       Date:  2019-03-20       Impact factor: 49.962

5.  Atomically thin p-n junctions with van der Waals heterointerfaces.

Authors:  Chul-Ho Lee; Gwan-Hyoung Lee; Arend M van der Zande; Wenchao Chen; Yilei Li; Minyong Han; Xu Cui; Ghidewon Arefe; Colin Nuckolls; Tony F Heinz; Jing Guo; James Hone; Philip Kim
Journal:  Nat Nanotechnol       Date:  2014-08-10       Impact factor: 39.213

Review 6.  2D materials and van der Waals heterostructures.

Authors:  K S Novoselov; A Mishchenko; A Carvalho; A H Castro Neto
Journal:  Science       Date:  2016-07-29       Impact factor: 47.728

7.  Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.

Authors:  Hui Fang; Corsin Battaglia; Carlo Carraro; Slavomir Nemsak; Burak Ozdol; Jeong Seuk Kang; Hans A Bechtel; Sujay B Desai; Florian Kronast; Ahmet A Unal; Giuseppina Conti; Catherine Conlon; Gunnar K Palsson; Michael C Martin; Andrew M Minor; Charles S Fadley; Eli Yablonovitch; Roya Maboudian; Ali Javey
Journal:  Proc Natl Acad Sci U S A       Date:  2014-04-14       Impact factor: 11.205

8.  Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials.

Authors:  Woo Jong Yu; Yuan Liu; Hailong Zhou; Anxiang Yin; Zheng Li; Yu Huang; Xiangfeng Duan
Journal:  Nat Nanotechnol       Date:  2013-10-27       Impact factor: 39.213

9.  Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.

Authors:  Rui Cheng; Dehui Li; Hailong Zhou; Chen Wang; Anxiang Yin; Shan Jiang; Yuan Liu; Yu Chen; Yu Huang; Xiangfeng Duan
Journal:  Nano Lett       Date:  2014-09-08       Impact factor: 11.189

10.  Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters.

Authors:  Woo Jong Yu; Zheng Li; Hailong Zhou; Yu Chen; Yang Wang; Yu Huang; Xiangfeng Duan
Journal:  Nat Mater       Date:  2012-12-16       Impact factor: 43.841

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  24 in total

Review 1.  Promises and prospects of two-dimensional transistors.

Authors:  Yuan Liu; Xidong Duan; Hyeon-Jin Shin; Seongjun Park; Yu Huang; Xiangfeng Duan
Journal:  Nature       Date:  2021-03-03       Impact factor: 49.962

Review 2.  High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method.

Authors:  Ruijie Yang; Liang Mei; Qingyong Zhang; Yingying Fan; Hyeon Suk Shin; Damien Voiry; Zhiyuan Zeng
Journal:  Nat Protoc       Date:  2022-01-12       Impact factor: 13.491

3.  P-type electrical contacts for 2D transition-metal dichalcogenides.

Authors:  Yan Wang; Jong Chan Kim; Yang Li; Kyung Yeol Ma; Seokmo Hong; Minsu Kim; Hyeon Suk Shin; Hu Young Jeong; Manish Chhowalla
Journal:  Nature       Date:  2022-08-01       Impact factor: 69.504

Review 4.  Recent progress in the synthesis of novel two-dimensional van der Waals materials.

Authors:  Renji Bian; Changcun Li; Qing Liu; Guiming Cao; Qundong Fu; Peng Meng; Jiadong Zhou; Fucai Liu; Zheng Liu
Journal:  Natl Sci Rev       Date:  2021-09-07       Impact factor: 23.178

5.  Gate-tunable contact-induced Fermi-level shift in semimetal.

Authors:  Xuanzhang Li; Yang Wei; Gaotian Lu; Zhen Mei; Guangqi Zhang; Liang Liang; Qunqing Li; Shoushan Fan; Yuegang Zhang
Journal:  Proc Natl Acad Sci U S A       Date:  2022-04-22       Impact factor: 12.779

6.  Charge transport through single-molecule bilayer-graphene junctions with atomic thickness.

Authors:  Shiqiang Zhao; Ze-Ying Deng; Shadiah Albalawi; Qingqing Wu; Lijue Chen; Hewei Zhang; Xin-Jing Zhao; Hao Hou; Songjun Hou; Gang Dong; Yang Yang; Jia Shi; Colin J Lambert; Yuan-Zhi Tan; Wenjing Hong
Journal:  Chem Sci       Date:  2022-03-30       Impact factor: 9.969

Review 7.  Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Authors:  Balakrishnan Kirubasankar; Yo Seob Won; Laud Anim Adofo; Soo Ho Choi; Soo Min Kim; Ki Kang Kim
Journal:  Chem Sci       Date:  2022-05-18       Impact factor: 9.969

8.  Sub-5 nm single crystalline organic p-n heterojunctions.

Authors:  Mingchao Xiao; Jie Liu; Chuan Liu; Guangchao Han; Yanjun Shi; Chunlei Li; Xi Zhang; Yuanyuan Hu; Zitong Liu; Xike Gao; Zhengxu Cai; Ji Liu; Yuanping Yi; Shuai Wang; Dong Wang; Wenping Hu; Yunqi Liu; Henning Sirringhaus; Lang Jiang
Journal:  Nat Commun       Date:  2021-05-13       Impact factor: 14.919

9.  Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics.

Authors:  Shisheng Li; Jinhua Hong; Bo Gao; Yung-Chang Lin; Hong En Lim; Xueyi Lu; Jing Wu; Song Liu; Yoshitaka Tateyama; Yoshiki Sakuma; Kazuhito Tsukagoshi; Kazu Suenaga; Takaaki Taniguchi
Journal:  Adv Sci (Weinh)       Date:  2021-04-02       Impact factor: 16.806

Review 10.  Laser Synthesis and Microfabrication of Micro/Nanostructured Materials Toward Energy Conversion and Storage.

Authors:  Lili Zhao; Zhen Liu; Duo Chen; Fan Liu; Zhiyuan Yang; Xiao Li; Haohai Yu; Hong Liu; Weijia Zhou
Journal:  Nanomicro Lett       Date:  2021-01-04
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