| Literature DB >> 28800085 |
Abstract
As a cell type-specific neuromodulation method, optogenetic technique holds remarkable potential for the realisation of advanced neuroprostheses. By genetically expressing light-sensitive proteins such as channelrhodopsin-2 (ChR2) in cell membranes, targeted neurons could be controlled by light. This new neuromodulation technique could then be applied into extensive brain networks and be utilised to provide effective therapies for neurological disorders. However, the development of novel optogenetic implants is still a key challenge in the field. The major requirements include small device dimensions, suitable spatial resolution, high safety, and strong controllability. In this paper, I present a concise review of the significant progress that has been made towards achieving a miniaturised, multifunctional, intelligent optogenetic implant. I identify the key limitations of current technologies and discuss the possible opportunities for future development.Entities:
Keywords: implantable device; neural probes; optogenetic implants; optogenetic stimulation; optogenetics
Mesh:
Year: 2017 PMID: 28800085 PMCID: PMC5578141 DOI: 10.3390/ijms18081751
Source DB: PubMed Journal: Int J Mol Sci ISSN: 1422-0067 Impact factor: 5.923
Figure 1(a) Schematic diagram of the multimode optical fibre-coupled probe in [31]. A graded index optical core is coupled with the optical fibre to realise light delivery. A hollow core is used for the in situ observation of neural activities. The shaft tip is shaped to 10 µm diameter for single-neuron manipulation. This figure is reprinted with permission from ref. [31]. (b) Picture of the 3D waveguide optical array in [33]. This figure is reprinted with permission from ref. [33].
Figure 2(a) Fibre-coupled multi-diode optical array in [38]. A single four-step fibre probe. The total length is 50 mm, and the last shank is 5 mm long with a 12° tip. This figure is reprinted with permission from ref. [38]. (b) Cartoon image of the fibre-coupled µLED optical probe [39]. This system mainly consists of a 270 × 220 × 50 μm3 LED chip, a flexible PI cable, a 550 × 500 × 380 μm3 Si housing, and a 5 mm-long optical fibre with 125 μm diameter. This figure is reprinted with permission from ref. [39].
Performance summary of recently published wave-guiding structure based optogenetic implants.
| Ref./Year | Light Source/Wavelength | Dimensions | No. of Sti Sites | Max Light Intensity | Max Power Consumption | Max Pulse Frequency | Electrical Recording | Fabrication Process | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|
| [ | Laser/488 nm | Diameter: 200 µm; | 1 | 10 mW/mm2 | - | - | Yes | Custom-Fabricated | - |
| [ | Laser/473 nm | Shaft length (L): 1 mm; Spacing: 400 µm | 1 | 5 mW/mm2 | - | 40 kHz | Yes | Custom-Fabricated | - |
| [ | Laser/473 nm | Apertures: 9 µm × 30 µm | 1 × 25 | 148 ± 56 mW/mm2 | 1500 mW | - | No | Custom-Fabricated | Silicon |
| [ | Laser/650 nm | Shaft L: 8 mm; W: 250 µm; laser diode dimensions: 300 × 300 × 100 µm3 | 2 × 2 | 96.9 mW/mm2 | 12.82 mW | 100 kHz | Yes | Custom-Fabricated | Silicon |
| [ | Laser/473 nm, 593 nm | Shaft length: 7 mm; Width: 200 µm | 1 | - | 21 mW | - | Yes | Custom-Fabricated | Polyimide |
| [ | Laser/473 nm | Shaft length: 5 mm; Width: 200 µm | 1 | 9400 mW/mm2 | 50 mW | 25 Hz | Yes | Custom-Fabricated | Silicon |
| [ | Laser/473 nm | Diameter: 150 µm | 1 | 0.9 mW | - | - | Yes | Custom-Fabricated | Silicon |
| [ | µLED/470, 589, 639 nm | Shaft L: 5 mm; Diameter: 60–70 µm | 1 × 6 | 40 mW/mm2 | Current: | - | No | Custom-Fabricated | - |
| [ | µLED/460 nm | Total length: 5 mm; Diameter: 125 µm; µLED dimensions: 270 × 220 × 50 μm3 | 1 | 1.71 mW/mm2 | Current: | - | No | Custom-Fabricated | Polyimide |
| [ | µLED/460 nm | Total length: 5 mm; Diameter: 125 µm; | 1 × 9 | 1.28 mW/mm2 | Current: | - | No | Custom-Fabricated | Polyimide |
Figure 3(a) Flexible polyimide-based µLED optrode in [45]. (1) A printed circuit board (PCB) is fabricated to assemble the optrode. (2) A scanning electron microscope (SEM) image of the optrode tip. The µLED site is bonded along with three recording sites. (3) A polymerised lens is covered on the µLED. (4) The overall system. µLED is turned on by a 2.9 V forward bias voltage. This figure is reprinted with permission from ref. [45]. (b) Samsung µLED mounted at the tip of the fabricated optrode in [46]. Several SU-8 anchors are created along the probe shaft, enhancing the bonding strength of two SU-8 layers. Cooper wire is bonded on the probe via the low melting point (LMP). Epoxy is adopted to further strengthen the bonding robustness. This figure is reprinted with permission from ref. [46]. (c) The PCD-based optical probe in [47,48]. (1) This PCD probe is inserted into an experimental rat for the in-vivo test. (2) A diagram of this two-shank probe. In each shank, the µLED is placed at the shaft tip, and two recording channels are positioned in the vicinity of stimulation site. This figure is reprinted with permission from ref. [48].
Figure 4(a) Sapphire-based GaN µLED optrode in [50]. (1) System architecture of this optrode. Six bonding pads are placed at the head part to control corresponding µLEDs which are uniformly positioned along the optrode shaft. (2) The cross-section view of the fabrication process. (3) The optrode shaft including five µLEDs, one of them turned on with bright light. This figure is reprinted with permission from ref. [50]. (b) Silicon-based 6-shank GaN µLED optrode in [51]. (1) 16 stimulation sites are created on each shank, and they are uniformly distributed along the 750 µm shaft. Every µLED can be individually manipulated. (2) System diagram. The fabricated optrode is bonded on a dedicated control PCB. This figure is reprinted with permission from ref. [51].
Figure 5(a) Flexible electronics-based multifunctional implantable probe in [53]. Four different functional layers are incorporated along with a releasable base. The recording microelectrode is constructed on Layer 1; and then a micro-inorganic photodetector (µIPD) is utilised for photodetection at Layer 2; Layer 3 contains four micro-inorganic LEDs (µ-ILEDs) for optogenetic stimulation; and Layer 4 is dedicated to temperature sensing. This figure is reprinted with permission from ref. [53]. (b) CMOS-based active multifunctional optogenetic implant in [54]. Six stimulation sites are placed along the optrode shaft to be individually controlled. Self-diagnostic scheme is built into each site to enhance system safety and reliability. In situ recording electronics and thermal sensor are also accomplished at each site.
Performance summary of recently published µLED-on-optrode structure based optogenetic implants.
| Ref./Year | Dimensions | No. of Sti Sites | Max Light Intensity | Max Power | Control Electronics | Integrity/Degradation Evaluation | Thermal Increment | Thermal Sensing | Electrical Recording | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|---|
| [ | Shaft: 12 mm; Width(W): 900 µm; µLED: 1000 × 600 × 200 μm3 | 1 | 0.7 mW/mm2 | Power: | External instruments | No | - | No | Yes | Polyimide |
| [ | length(L): 4.2 mm; W: 0.86 mm; µLED: 550 × 600 × 200 μm3 | 1 | 0.95 mW/mm2 | Power: | - | No | 0.5 °C increase with 7 mW power and 2.74 V input voltage | No | No | SU-8 |
| [ | Shank L: 5 mm; W: 0.9 mm; | 1 | 1.5 mW/mm2 | Voltage: | External instruments | No | 1 °C increase with 3.6 V input voltage | No | Yes | Polycrystalline Diamond |
| [ | L: 7 mm; Shaft L: 1 mm; W: 80 µm; | 5 | 600 mW/mm2 | - | External instruments | No | 1.5 °C increase with 600 mW/mm2 and 200 ms pulse | No | No | Sapphire |
| [ | Total L: 3 mm; Shaft L: 750 µm; | 16 | 400 mW/mm2 | Current: | External PCB control boards | No | 0.5 °C increase with 150 mW/mm2 radiance and 50 ms pulse; Max: 4 °C | No | No | Silicon |
| [ | Shank L: 5 mm; W: 70 µm; | 3 × 4 | 353 mW/mm2 | Current: | External PCB control boards | No | < 1.0 °C increase with 3.4 V voltage | No | Yes | Silicon |
| [ | Shaft L: 1 mm; W: ~400 µm; Thickness: | 4 | ~40 mW/mm2 | Power: | External flexible/rigid control boards | No | 1.0 °C with 17.7 mW/mm2 radiance and 10 ms pulse; Max: 10 °C | Yes | Yes | Platinum, Silicon, Polymer |
| [ | Shaft L: 4400 µm; W: 200 µm | 6–18 | 1256 mW/mm2 | Power: | In-built active electronics | Yes | 0.8 °C with 6 mW power | Yes | Yes | Silicon |