| Literature DB >> 26184225 |
Diwei He1, Stephen P Morgan2, Dimitrios Trachanis3, Jan van Hese4, Dimitris Drogoudis5, Franco Fummi6, Francesco Stefanni7, Valerio Guarnieri8, Barrie R Hayes-Gill9.
Abstract
Pulse oximetry is a noninvasive and continuous method for monitoring the blood oxygen saturation level. This paper presents the design and testing of a single-chip pulse oximeter fabricated in a 0.35 µm CMOS process. The chip includes photodiode, transimpedance amplifier, analogue band-pass filters, analogue-to-digital converters, digital signal processor and LED timing control. The experimentally measured AC and DC characteristics of individual circuits including the DC output voltage of the transimpedance amplifier, transimpedance gain of the transimpedance amplifier, and the central frequency and bandwidth of the analogue band-pass filters, show a good match (within 1%) with the circuit simulations. With modulated light source and integrated lock-in detection the sensor effectively suppresses the interference from ambient light and 1/f noise. In a breath hold and release experiment the single chip sensor demonstrates consistent and comparable performance to commercial pulse oximetry devices with a mean of 1.2% difference. The single-chip sensor enables a compact and robust design solution that offers a route towards wearable devices for health monitoring.Entities:
Keywords: CMOS sensor; SpO2; heart rate monitor; lock-in; photoplethysmography; pulse oximetry; smart sensor
Year: 2015 PMID: 26184225 PMCID: PMC4541923 DOI: 10.3390/s150717076
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1(a) Block diagram of the sensor. (Photodiode, I/V—Current to Voltage Converter, ADC—analogue to digital converter, Digital signal processor, DAC—digital to analogue converter, LED—light emitting diode)—Items inside dotted region are all “CMOS on-chip”; (b) Layout of the CMOS sensor.
Figure 2CMOS Sensor chip and LED illumination PCBs.
Figure 3Optical setup for laboratory characterization of the I/V converter and band-pass filters. The ac and dc light levels of the λ = 640 nm red LED (KINGBRIGHT—L-7104SRC-J4) is controlled by a signal generator (Tektronix AGF3252). The reference photodiode (PDA520) has a known transimpedance gain and is used to calculate the light falling on the CMOS sensor.
Table illustrating the photodiode illuminance, corresponding photocurrent and resulting transimpedance (I/V) amplifier output voltage. Note: the output voltage for dark current is 1.65 V.
| Light Power (nW) | Photocurrent (nA) | Voltage (V) |
|---|---|---|
| 20.83 | 6.25 | 1.7 |
| 135.83 | 43.75 | 2.0 |
| 354.17 | 106.25 | 2.5 |
| 633.33 | 190 | 3.17 |
Figure 4Experimental and simulated chip characterization results (a) DC response of the I/V converter; (b) Frequency response of the I/V converter; (c) Frequency response of the two band-pass filters.
Figure 5Second-order empirical calibration curve relating the absorbance ratio (R) from the CMOS sensor to the SpO2 level of the “BC biomedical FingerSim” phantoms in transmission mode.
Figure 6(a) Red λ = 660 nm (top) and IR λ = 940 nm (bottom) PPG signals taken in reflectance mode from the finger of a healthy volunteer; (b) Frequency spectrum of the Red PPG signal (DC removed) and system noise floor.
Figure 7Comparison of the SpO2 values for the CMOS sensor and two commercial devices (Masimo Radical 7 and Nexus-10) in transmission mode for a breath hold and release experiment.
Figure 8Comparison of the SpO2 outputs of the CMOS sensor and a Masimo Radical-7 in reflectance mode for a breath hold and release experiment.