Literature DB >> 25502099

Negative capacitance in a ferroelectric capacitor.

Asif Islam Khan1, Korok Chatterjee1, Brian Wang1, Steven Drapcho2, Long You1, Claudy Serrao1, Saidur Rahman Bakaul1, Ramamoorthy Ramesh3, Sayeef Salahuddin4.   

Abstract

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Year:  2014        PMID: 25502099     DOI: 10.1038/nmat4148

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  10 in total

1.  Tunnel field-effect transistors as energy-efficient electronic switches.

Authors:  Adrian M Ionescu; Heike Riel
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

2.  Negative compressibility of interacting two-dimensional electron and quasiparticle gases.

Authors: 
Journal:  Phys Rev Lett       Date:  1992-02-03       Impact factor: 9.161

3.  It's time to reinvent the transistor!

Authors:  Thomas N Theis; Paul M Solomon
Journal:  Science       Date:  2010-03-26       Impact factor: 47.728

4.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

Authors:  Sayeef Salahuddin; Supriyo Datta
Journal:  Nano Lett       Date:  2007-12-06       Impact factor: 11.189

5.  Nanoelectronics: negative capacitance to the rescue?

Authors:  Victor V Zhirnov; Ralph K Cavin
Journal:  Nat Nanotechnol       Date:  2008-02       Impact factor: 39.213

6.  Very large capacitance enhancement in a two-dimensional electron system.

Authors:  Lu Li; C Richter; S Paetel; T Kopp; J Mannhart; R C Ashoori
Journal:  Science       Date:  2011-05-13       Impact factor: 47.728

7.  Effective nanometer airgap of NEMS devices using negative capacitance of ferroelectric materials.

Authors:  Muhammad Masuduzzaman; Muhammad Ashraful Alam
Journal:  Nano Lett       Date:  2014-05-23       Impact factor: 11.189

8.  Experimental observation of negative capacitance in ferroelectrics at room temperature.

Authors:  Daniel J R Appleby; Nikhil K Ponon; Kelvin S K Kwa; Bin Zou; Peter K Petrov; Tianle Wang; Neil M Alford; Anthony O'Neill
Journal:  Nano Lett       Date:  2014-06-13       Impact factor: 11.189

9.  Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Authors:  Catherine Dubourdieu; John Bruley; Thomas M Arruda; Agham Posadas; Jean Jordan-Sweet; Martin M Frank; Eduard Cartier; David J Frank; Sergei V Kalinin; Alexander A Demkov; Vijay Narayanan
Journal:  Nat Nanotechnol       Date:  2013-09-29       Impact factor: 39.213

10.  Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Authors:  Weiwei Gao; Asif Khan; Xavi Marti; Chris Nelson; Claudy Serrao; Jayakanth Ravichandran; Ramamoorthy Ramesh; Sayeef Salahuddin
Journal:  Nano Lett       Date:  2014-09-30       Impact factor: 11.189

  10 in total
  24 in total

1.  Ferroelectrics: Negative capacitance detected.

Authors:  Gustau Catalan; David Jiménez; Alexei Gruverman
Journal:  Nat Mater       Date:  2015-02       Impact factor: 43.841

2.  Negative capacitance in multidomain ferroelectric superlattices.

Authors:  Pavlo Zubko; Jacek C Wojdeł; Marios Hadjimichael; Stéphanie Fernandez-Pena; Anaïs Sené; Igor Luk'yanchuk; Jean-Marc Triscone; Jorge Íñiguez
Journal:  Nature       Date:  2016-06-13       Impact factor: 49.962

3.  Polymer matrix ferroelectric composites under pressure: Negative electric capacitance and glassy dynamics.

Authors:  Szymon Starzonek; Aleksandra Drozd-Rzoska; Sylwester J Rzoska; Kena Zhang; Emilia Pawlikowska; Aleksandra Kȩdzierska-Sar; Mikolaj Szafran; Feng Gao
Journal:  Eur Phys J E Soft Matter       Date:  2019-09-09       Impact factor: 1.890

4.  Single crystal functional oxides on silicon.

Authors:  Saidur Rahman Bakaul; Claudy Rayan Serrao; Michelle Lee; Chun Wing Yeung; Asis Sarker; Shang-Lin Hsu; Ajay Kumar Yadav; Liv Dedon; Long You; Asif Islam Khan; James David Clarkson; Chenming Hu; Ramamoorthy Ramesh; Sayeef Salahuddin
Journal:  Nat Commun       Date:  2016-02-08       Impact factor: 14.919

5.  Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.

Authors:  Seul Ji Song; Yu Jin Kim; Min Hyuk Park; Young Hwan Lee; Han Joon Kim; Taehwan Moon; Keum Do Kim; Jung-Hae Choi; Zhihui Chen; Anquan Jiang; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-02-11       Impact factor: 4.379

Review 6.  A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications.

Authors:  Lucie Mazet; Sang Mo Yang; Sergei V Kalinin; Sylvie Schamm-Chardon; Catherine Dubourdieu
Journal:  Sci Technol Adv Mater       Date:  2015-06-30       Impact factor: 8.090

7.  Magnetoelectric Response in Multiferroic SrFe12O19 Ceramics.

Authors:  Guolong Tan; Yao Huang; Haohao Sheng
Journal:  PLoS One       Date:  2016-12-09       Impact factor: 3.240

8.  Observation of negative capacitance in antiferroelectric PbZrO3 Films.

Authors:  Leilei Qiao; Cheng Song; Yiming Sun; Muhammad Umer Fayaz; Tianqi Lu; Siqi Yin; Chong Chen; Huiping Xu; Tian-Ling Ren; Feng Pan
Journal:  Nat Commun       Date:  2021-07-09       Impact factor: 14.919

9.  Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Authors:  Jae Hyo Park; Gil Su Jang; Hyung Yoon Kim; Ki Hwan Seok; Hee Jae Chae; Sol Kyu Lee; Seung Ki Joo
Journal:  Sci Rep       Date:  2016-04-21       Impact factor: 4.379

10.  Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

Authors:  Yu Jin Kim; Min Hyuk Park; Young Hwan Lee; Han Joon Kim; Woojin Jeon; Taehwan Moon; Keum Do Kim; Doo Seok Jeong; Hiroyuki Yamada; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-01-08       Impact factor: 4.379

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