Literature DB >> 18654465

Nanoelectronics: negative capacitance to the rescue?

Victor V Zhirnov, Ralph K Cavin.   

Abstract

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Year:  2008        PMID： 18654465     DOI： 10.1038/nnano.2008.18

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN： 1748-3387            Impact factor:   39.213


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  15 in total

1.  Negative capacitance in a ferroelectric capacitor.

Authors:  Asif Islam Khan; Korok Chatterjee; Brian Wang; Steven Drapcho; Long You; Claudy Serrao; Saidur Rahman Bakaul; Ramamoorthy Ramesh; Sayeef Salahuddin
Journal:  Nat Mater       Date:  2014-12-15       Impact factor: 43.841

2.  Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches.

Authors:  Mohammed Soltani; Mohamed Chaker; Joelle Margot
Journal:  Sci Technol Adv Mater       Date:  2011-07-07       Impact factor: 8.090

3.  Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Authors:  Catherine Dubourdieu; John Bruley; Thomas M Arruda; Agham Posadas; Jean Jordan-Sweet; Martin M Frank; Eduard Cartier; David J Frank; Sergei V Kalinin; Alexander A Demkov; Vijay Narayanan
Journal:  Nat Nanotechnol       Date:  2013-09-29       Impact factor: 39.213

4.  Single crystal functional oxides on silicon.

Authors:  Saidur Rahman Bakaul; Claudy Rayan Serrao; Michelle Lee; Chun Wing Yeung; Asis Sarker; Shang-Lin Hsu; Ajay Kumar Yadav; Liv Dedon; Long You; Asif Islam Khan; James David Clarkson; Chenming Hu; Ramamoorthy Ramesh; Sayeef Salahuddin
Journal:  Nat Commun       Date:  2016-02-08       Impact factor: 14.919

5.  Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.

Authors:  Seul Ji Song; Yu Jin Kim; Min Hyuk Park; Young Hwan Lee; Han Joon Kim; Taehwan Moon; Keum Do Kim; Jung-Hae Choi; Zhihui Chen; Anquan Jiang; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-02-11       Impact factor: 4.379

Review 6.  A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications.

Authors:  Lucie Mazet; Sang Mo Yang; Sergei V Kalinin; Sylvie Schamm-Chardon; Catherine Dubourdieu
Journal:  Sci Technol Adv Mater       Date:  2015-06-30       Impact factor: 8.090

7.  Observation of negative capacitance in antiferroelectric PbZrO3 Films.

Authors:  Leilei Qiao; Cheng Song; Yiming Sun; Muhammad Umer Fayaz; Tianqi Lu; Siqi Yin; Chong Chen; Huiping Xu; Tian-Ling Ren; Feng Pan
Journal:  Nat Commun       Date:  2021-07-09       Impact factor: 14.919

8.  Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Authors:  Jae Hyo Park; Gil Su Jang; Hyung Yoon Kim; Ki Hwan Seok; Hee Jae Chae; Sol Kyu Lee; Seung Ki Joo
Journal:  Sci Rep       Date:  2016-04-21       Impact factor: 4.379

9.  A steep-slope transistor based on abrupt electronic phase transition.

Authors:  Nikhil Shukla; Arun V Thathachary; Ashish Agrawal; Hanjong Paik; Ahmedullah Aziz; Darrell G Schlom; Sumeet Kumar Gupta; Roman Engel-Herbert; Suman Datta
Journal:  Nat Commun       Date:  2015-08-07       Impact factor: 14.919

Review 10.  Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Authors:  Eunah Ko; Jaemin Shin; Changhwan Shin
Journal:  Nano Converg       Date:  2018-01-28
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