Literature DB >> 20339062

It's time to reinvent the transistor!

Thomas N Theis1, Paul M Solomon.   

Abstract

A breakthrough in materials could refresh and sustain the information technology revolution.

Year:  2010        PMID： 20339062     DOI： 10.1126/science.1187597

Source DB:  PubMed          Journal:  Science        ISSN： 0036-8075            Impact factor:   47.728


  12 in total

1.  Atomically localized plasmon enhancement in monolayer graphene.

Authors:  Wu Zhou; Jaekwang Lee; Jagjit Nanda; Sokrates T Pantelides; Stephen J Pennycook; Juan-Carlos Idrobo
Journal:  Nat Nanotechnol       Date:  2012-01-29       Impact factor: 39.213

2.  Negative capacitance in a ferroelectric capacitor.

Authors:  Asif Islam Khan; Korok Chatterjee; Brian Wang; Steven Drapcho; Long You; Claudy Serrao; Saidur Rahman Bakaul; Ramamoorthy Ramesh; Sayeef Salahuddin
Journal:  Nat Mater       Date:  2014-12-15       Impact factor: 43.841

3.  Ferroelectrics: Negative capacitance detected.

Authors:  Gustau Catalan; David Jiménez; Alexei Gruverman
Journal:  Nat Mater       Date:  2015-02       Impact factor: 43.841

4.  Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches.

Authors:  Mohammed Soltani; Mohamed Chaker; Joelle Margot
Journal:  Sci Technol Adv Mater       Date:  2011-07-07       Impact factor: 8.090

5.  Synthesis of an open-framework allotrope of silicon.

Authors:  Duck Young Kim; Stevce Stefanoski; Oleksandr O Kurakevych; Timothy A Strobel
Journal:  Nat Mater       Date:  2014-11-17       Impact factor: 43.841

6.  Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.

Authors:  Hyunhyub Ko; Kuniharu Takei; Rehan Kapadia; Steven Chuang; Hui Fang; Paul W Leu; Kartik Ganapathi; Elena Plis; Ha Sul Kim; Szu-Ying Chen; Morten Madsen; Alexandra C Ford; Yu-Lun Chueh; Sanjay Krishna; Sayeef Salahuddin; Ali Javey
Journal:  Nature       Date:  2010-11-11       Impact factor: 49.962

7.  Piezo-generated charge mapping revealed through direct piezoelectric force microscopy.

Authors:  A Gomez; M Gich; A Carretero-Genevrier; T Puig; X Obradors
Journal:  Nat Commun       Date:  2017-10-24       Impact factor: 14.919

8.  Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011).

Authors:  Ming Liu; Jason Hoffman; Jing Wang; Jinxing Zhang; Brittany Nelson-Cheeseman; Anand Bhattacharya
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Authors:  Tianxiang Nan; Ming Liu; Wei Ren; Zuo-Guang Ye; Nian X Sun
Journal:  Sci Rep       Date:  2014-08-04       Impact factor: 4.379

Review 10.  Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Authors:  Eunah Ko; Jaemin Shin; Changhwan Shin
Journal:  Nano Converg       Date:  2018-01-28
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