Literature DB >> 25071178

Anomalously robust valley polarization and valley coherence in bilayer WS2.

Bairen Zhu1, Hualing Zeng2, Junfeng Dai3, Zhirui Gong1, Xiaodong Cui4.   

Abstract

We report the observation of anomalously robust valley polarization and valley coherence in bilayer WS2. The polarization of the photoluminescence from bilayer WS2 follows that of the excitation source with both circular and linear polarization, and remains even at room temperature. The near-unity circular polarization of the luminescence reveals the coupling of spin, layer, and valley degree of freedom in bilayer system, and the linearly polarized photoluminescence manifests quantum coherence between the two inequivalent band extrema in momentum space, namely, the valley quantum coherence in atomically thin bilayer WS2. This observation provides insight into quantum manipulation in atomically thin semiconductors.

Keywords:  spin–valley coupling; valley quantum control; valleytronics

Year:  2014        PMID: 25071178      PMCID: PMC4136578          DOI: 10.1073/pnas.1406960111

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  14 in total

1.  Exciton spin dynamics in quantum wells.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1993-06-15

2.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

4.  Optical generation of excitonic valley coherence in monolayer WSe2.

Authors:  Aaron M Jones; Hongyi Yu; Nirmal J Ghimire; Sanfeng Wu; Grant Aivazian; Jason S Ross; Bo Zhao; Jiaqiang Yan; David G Mandrus; Di Xiao; Wang Yao; Xiaodong Xu
Journal:  Nat Nanotechnol       Date:  2013-08-11       Impact factor: 39.213

5.  Emerging photoluminescence in monolayer MoS2.

Authors:  Andrea Splendiani; Liang Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi-Yung Chim; Giulia Galli; Feng Wang
Journal:  Nano Lett       Date:  2010-04-14       Impact factor: 11.189

6.  Atomically thin MoS₂: a new direct-gap semiconductor.

Authors:  Kin Fai Mak; Changgu Lee; James Hone; Jie Shan; Tony F Heinz
Journal:  Phys Rev Lett       Date:  2010-09-24       Impact factor: 9.161

7.  Transport theory of monolayer transition-metal dichalcogenides through symmetry.

Authors:  Yang Song; Hanan Dery
Journal:  Phys Rev Lett       Date:  2013-07-09       Impact factor: 9.161

8.  Tightly bound trions in monolayer MoS2.

Authors:  Kin Fai Mak; Keliang He; Changgu Lee; Gwan Hyoung Lee; James Hone; Tony F Heinz; Jie Shan
Journal:  Nat Mater       Date:  2012-12-02       Impact factor: 43.841

9.  Electrical control of neutral and charged excitons in a monolayer semiconductor.

Authors:  Jason S Ross; Sanfeng Wu; Hongyi Yu; Nirmal J Ghimire; Aaron M Jones; Grant Aivazian; Jiaqiang Yan; David G Mandrus; Di Xiao; Wang Yao; Xiaodong Xu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

10.  Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers.

Authors:  Zhirui Gong; Gui-Bin Liu; Hongyi Yu; Di Xiao; Xiaodong Cui; Xiaodong Xu; Wang Yao
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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  18 in total

1.  Opto-valleytronic imaging of atomically thin semiconductors.

Authors:  Andre Neumann; Jessica Lindlau; Léo Colombier; Manuel Nutz; Sina Najmaei; Jun Lou; Aditya D Mohite; Hisato Yamaguchi; Alexander Högele
Journal:  Nat Nanotechnol       Date:  2017-01-16       Impact factor: 39.213

2.  Valley and band structure engineering of folded MoS(2) bilayers.

Authors:  Tao Jiang; Hengrui Liu; Di Huang; Shuai Zhang; Yingguo Li; Xingao Gong; Yuen-Ron Shen; Wei-Tao Liu; Shiwei Wu
Journal:  Nat Nanotechnol       Date:  2014-08-31       Impact factor: 39.213

3.  Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides.

Authors:  Lu Xie; Xiaodong Cui
Journal:  Proc Natl Acad Sci U S A       Date:  2016-03-21       Impact factor: 11.205

4.  Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide.

Authors:  Yu Ye; Jun Xiao; Hailong Wang; Ziliang Ye; Hanyu Zhu; Mervin Zhao; Yuan Wang; Jianhua Zhao; Xiaobo Yin; Xiang Zhang
Journal:  Nat Nanotechnol       Date:  2016-04-04       Impact factor: 39.213

5.  Exciton binding energy of monolayer WS₂.

Authors:  Bairen Zhu; Xi Chen; Xiaodong Cui
Journal:  Sci Rep       Date:  2015-03-18       Impact factor: 4.379

6.  Telluriding monolayer MoS2 and WS2 via alkali metal scooter.

Authors:  Seok Joon Yun; Gang Hee Han; Hyun Kim; Dinh Loc Duong; Bong Gyu Shin; Jiong Zhao; Quoc An Vu; Jubok Lee; Seung Mi Lee; Young Hee Lee
Journal:  Nat Commun       Date:  2017-12-18       Impact factor: 14.919

7.  Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit.

Authors:  Jakob Wierzbowski; Julian Klein; Florian Sigger; Christian Straubinger; Malte Kremser; Takashi Taniguchi; Kenji Watanabe; Ursula Wurstbauer; Alexander W Holleitner; Michael Kaniber; Kai Müller; Jonathan J Finley
Journal:  Sci Rep       Date:  2017-09-28       Impact factor: 4.379

8.  Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

Authors:  Shuren Lin; Alexandra Carvalho; Shancheng Yan; Roger Li; Sujung Kim; Aleksandr Rodin; Lídia Carvalho; Emory M Chan; Xi Wang; Antonio H Castro Neto; Jie Yao
Journal:  Nat Commun       Date:  2018-04-13       Impact factor: 14.919

9.  The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2.

Authors:  Kathleen M McCreary; Aubrey T Hanbicki; Simranjeet Singh; Roland K Kawakami; Glenn G Jernigan; Masa Ishigami; Amy Ng; Todd H Brintlinger; Rhonda M Stroud; Berend T Jonker
Journal:  Sci Rep       Date:  2016-10-18       Impact factor: 4.379

10.  A gate-free monolayer WSe2 pn diode.

Authors:  Jhih-Wei Chen; Shun-Tsung Lo; Sheng-Chin Ho; Sheng-Shong Wong; Thi-Hai-Yen Vu; Xin-Quan Zhang; Yi-De Liu; Yu-You Chiou; Yu-Xun Chen; Jan-Chi Yang; Yi-Chun Chen; Ying-Hao Chu; Yi-Hsien Lee; Chung-Jen Chung; Tse-Ming Chen; Chia-Hao Chen; Chung-Lin Wu
Journal:  Nat Commun       Date:  2018-08-07       Impact factor: 14.919

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