Literature DB >> 23552946

Colossal injection of catalyst atoms into silicon nanowires.

Oussama Moutanabbir1, Dieter Isheim, Horst Blumtritt, Stephan Senz, Eckhard Pippel, David N Seidman.   

Abstract

The incorporation of impurities during the growth of nanowires from the vapour phase alters their basic properties substantially, and this process is critical in an extended range of emerging nanometre-scale technologies. In particular, achieving precise control of the behaviour of group III and group V dopants has been a crucial step in the development of silicon (Si) nanowire-based devices. Recently it has been demonstrated that the use of aluminium (Al) as a growth catalyst, instead of the usual gold, also yields an effective p-type doping, thereby enabling a novel and efficient route to functionalizing Si nanowires. Besides the technological implications, this self-doping implies the detachment of Al from the catalyst and its injection into the growing nanowire, involving atomic-scale processes that are crucial for the fundamental understanding of the catalytic assembly of nanowires. Here we present an atomic-level, quantitative study of this phenomenon of catalyst dissolution by three-dimensional atom-by-atom mapping of individual Al-catalysed Si nanowires using highly focused ultraviolet-laser-assisted atom-probe tomography. Although the observed incorporation of the catalyst atoms into nanowires exceeds by orders of magnitude the equilibrium solid solubility and solid-solution concentrations in known non-equilibrium processes, the Al impurities are found to be homogeneously distributed in the nanowire and do not form precipitates or clusters. As well as the anticipated effect on the electrical properties, this kinetics-driven colossal injection also has direct implications for nanowire morphology. We discuss the observed strong deviation from equilibrium using a model of solute trapping at step edges, and identify the key growth parameters behind this phenomenon on the basis of a kinetic model of step-flow growth of nanowires. The control of this phenomenon provides opportunities to create a new class of nanoscale devices by precisely tailoring the shape and composition of metal-catalysed nanowires.

Entities:  

Year:  2013        PMID: 23552946     DOI: 10.1038/nature11999

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  18 in total

1.  Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire.

Authors:  Daniel E Perea; Eric R Hemesath; Edwin J Schwalbach; Jessica L Lensch-Falk; Peter W Voorhees; Lincoln J Lauhon
Journal:  Nat Nanotechnol       Date:  2009-03-29       Impact factor: 39.213

2.  Axial p-n junctions realized in silicon nanowires by ion implantation.

Authors:  S Hoffmann; J Bauer; C Ronning; Th Stelzner; J Michler; C Ballif; V Sivakov; S H Christiansen
Journal:  Nano Lett       Date:  2009-04       Impact factor: 11.189

3.  Programmable nanowire circuits for nanoprocessors.

Authors:  Hao Yan; Hwan Sung Choe; SungWoo Nam; Yongjie Hu; Shamik Das; James F Klemic; James C Ellenbogen; Charles M Lieber
Journal:  Nature       Date:  2011-02-10       Impact factor: 49.962

4.  The influence of the surface migration of gold on the growth of silicon nanowires.

Authors:  J B Hannon; S Kodambaka; F M Ross; R M Tromp
Journal:  Nature       Date:  2006-01-29       Impact factor: 49.962

5.  Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature.

Authors:  Oussama Moutanabbir; Stephan Senz; Roland Scholz; Marin Alexe; Yunseok Kim; Eckhard Pippel; Yewu Wang; Christian Wiethoff; Tobias Nabbefeld; Frank Meyer zu Heringdorf; Michael Horn-von Hoegen
Journal:  ACS Nano       Date:  2011-01-06       Impact factor: 15.881

6.  Controlled nanoscale doping of semiconductors via molecular monolayers.

Authors:  Johnny C Ho; Roie Yerushalmi; Zachery A Jacobson; Zhiyong Fan; Robert L Alley; Ali Javey
Journal:  Nat Mater       Date:  2007-11-11       Impact factor: 43.841

7.  Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.

Authors:  Yue Ke; Xiaojun Weng; Joan M Redwing; Chad M Eichfeld; Thomas R Swisher; Suzanne E Mohney; Youssef M Habib
Journal:  Nano Lett       Date:  2009-12       Impact factor: 11.189

8.  Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires.

Authors:  Brent A Wacaser; Mark C Reuter; Maha M Khayyat; Cheng-Yen Wen; Richard Haight; Supratik Guha; Frances M Ross
Journal:  Nano Lett       Date:  2009-09       Impact factor: 11.189

9.  Kinetics of individual nucleation events observed in nanoscale vapor-liquid-solid growth.

Authors:  B J Kim; J Tersoff; S Kodambaka; M C Reuter; E A Stach; F M Ross
Journal:  Science       Date:  2008-11-14       Impact factor: 47.728

10.  Local electrical potential detection of DNA by nanowire-nanopore sensors.

Authors:  Ping Xie; Qihua Xiong; Ying Fang; Quan Qing; Charles M Lieber
Journal:  Nat Nanotechnol       Date:  2011-12-11       Impact factor: 39.213

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  15 in total

1.  Stretching the Equilibrium Limit of Sn in Ge1-x Sn x Nanowires: Implications for Field Effect Transistors.

Authors:  Subhajit Biswas; Jessica Doherty; Emmanuele Galluccio; Hugh G Manning; Michele Conroy; Ray Duffy; Ursel Bangert; John J Boland; Justin D Holmes
Journal:  ACS Appl Nano Mater       Date:  2021-02-03

2.  Self-inhibition effect of metal incorporation in nanoscaled semiconductors.

Authors:  Bin Zhu; Ding Yi; Yuxi Wang; Hongyu Sun; Gang Sha; Gong Zheng; Erik C Garnett; Bozhi Tian; Feng Ding; Jia Zhu
Journal:  Proc Natl Acad Sci U S A       Date:  2021-01-26       Impact factor: 12.779

3.  Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Authors:  Suixing Shi; Zhi Zhang; Zhenyu Lu; Haibo Shu; Pingping Chen; Ning Li; Jin Zou; Wei Lu
Journal:  Nanoscale Res Lett       Date:  2015-03-01       Impact factor: 4.703

4.  Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions.

Authors:  Rong Sun; Daniel Jacobsson; I-Ju Chen; Malin Nilsson; Claes Thelander; Sebastian Lehmann; Kimberly A Dick
Journal:  Nano Lett       Date:  2015-06-01       Impact factor: 11.189

5.  Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies.

Authors:  Yin Fang; Yuanwen Jiang; Mathew J Cherukara; Fengyuan Shi; Kelliann Koehler; George Freyermuth; Dieter Isheim; Badri Narayanan; Alan W Nicholls; David N Seidman; Subramanian K R S Sankaranarayanan; Bozhi Tian
Journal:  Nat Commun       Date:  2017-12-08       Impact factor: 14.919

6.  Direct Synthesis of Hyperdoped Germanium Nanowires.

Authors:  Michael S Seifner; Masiar Sistani; Fabrizio Porrati; Giorgia Di Prima; Patrik Pertl; Michael Huth; Alois Lugstein; Sven Barth
Journal:  ACS Nano       Date:  2018-01-30       Impact factor: 15.881

7.  Atomistics of vapour-liquid-solid nanowire growth.

Authors:  Hailong Wang; Luis A Zepeda-Ruiz; George H Gilmer; Moneesh Upmanyu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

8.  Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires.

Authors:  Subhajit Biswas; Jessica Doherty; Dzianis Saladukha; Quentin Ramasse; Dipanwita Majumdar; Moneesh Upmanyu; Achintya Singha; Tomasz Ochalski; Michael A Morris; Justin D Holmes
Journal:  Nat Commun       Date:  2016-04-20       Impact factor: 14.919

9.  Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

Authors:  Zhiyang Yu; Jian Luo; Baiou Shi; Jiong Zhao; Martin P Harmer; Jing Zhu
Journal:  Sci Rep       Date:  2015-11-26       Impact factor: 4.379

10.  Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process.

Authors:  Takeshi Ishiyama; Shuhei Nakagawa; Toshiki Wakamatsu
Journal:  Sci Rep       Date:  2016-07-28       Impact factor: 4.379

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