Literature DB >> 19421218

Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire.

Daniel E Perea1, Eric R Hemesath, Edwin J Schwalbach, Jessica L Lensch-Falk, Peter W Voorhees, Lincoln J Lauhon.   

Abstract

Semiconductor nanowires show promise for many device applications, but controlled doping with electronic and magnetic impurities remains an important challenge. Limitations on dopant incorporation have been identified in nanocrystals, raising concerns about the prospects for doping nanostructures. Progress has been hindered by the lack of a method to quantify the dopant distribution in single nanostructures. Recently, we showed that atom probe tomography can be used to determine the composition of isolated nanowires. Here, we report the first direct measurements of dopant concentrations in arbitrary regions of individual nanowires. We find that differences in precursor decomposition rates between the liquid catalyst and solid nanowire surface give rise to a heavily doped shell surrounding an underdoped core. We also present a thermodynamic model that relates liquid and solid compositions to dopant fluxes.

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Year:  2009        PMID: 19421218     DOI: 10.1038/nnano.2009.51

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  10 in total

1.  Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

Authors:  Y Cui; C M Lieber
Journal:  Science       Date:  2001-02-02       Impact factor: 47.728

2.  Doping semiconductor nanocrystals.

Authors:  Steven C Erwin; Lijun Zu; Michael I Haftel; Alexander L Efros; Thomas A Kennedy; David J Norris
Journal:  Nature       Date:  2005-07-07       Impact factor: 49.962

Review 3.  Nanoelectronics from the bottom up.

Authors:  Wei Lu; Charles M Lieber
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

4.  Three-dimensional nanoscale composition mapping of semiconductor nanowires.

Authors:  Daniel E Perea; Jonathan E Allen; Steven J May; Bruce W Wessels; David N Seidman; Lincoln J Lauhon
Journal:  Nano Lett       Date:  2006-02       Impact factor: 11.189

5.  Dopant ion concentration dependence of growth and faceting of manganese-doped GaN nanowires.

Authors:  Pavle V Radovanovic; Kevin G Stamplecoskie; Brent G Pautler
Journal:  J Am Chem Soc       Date:  2007-08-16       Impact factor: 15.419

Review 6.  Doped nanocrystals.

Authors:  David J Norris; Alexander L Efros; Steven C Erwin
Journal:  Science       Date:  2008-03-28       Impact factor: 47.728

7.  Epitaxial core-shell and core-multishell nanowire heterostructures.

Authors:  Lincoln J Lauhon; Mark S Gudiksen; Deli Wang; Charles M Lieber
Journal:  Nature       Date:  2002-11-07       Impact factor: 49.962

8.  Growth of nanowire superlattice structures for nanoscale photonics and electronics.

Authors:  Mark S Gudiksen; Lincoln J Lauhon; Jianfang Wang; David C Smith; Charles M Lieber
Journal:  Nature       Date:  2002-02-07       Impact factor: 49.962

9.  General control of transition-metal-doped GaN nanowire growth: toward understanding the mechanism of dopant incorporation.

Authors:  Kevin G Stamplecoskie; Ling Ju; Shokouh S Farvid; Pavle V Radovanovic
Journal:  Nano Lett       Date:  2008-08-07       Impact factor: 11.189

10.  High-resolution detection of Au catalyst atoms in Si nanowires.

Authors:  Jonathan E Allen; Eric R Hemesath; Daniel E Perea; Jessica L Lensch-Falk; Z Y Li; Feng Yin; Mhairi H Gass; Peng Wang; Andrew L Bleloch; Richard E Palmer; Lincoln J Lauhon
Journal:  Nat Nanotechnol       Date:  2008-02-10       Impact factor: 39.213

  10 in total
  22 in total

Review 1.  Electrical contacts to one- and two-dimensional nanomaterials.

Authors:  François Léonard; A Alec Talin
Journal:  Nat Nanotechnol       Date:  2011-11-27       Impact factor: 39.213

2.  Nanostructural hierarchy increases the strength of aluminium alloys.

Authors:  Peter V Liddicoat; Xiao-Zhou Liao; Yonghao Zhao; Yuntian Zhu; Maxim Y Murashkin; Enrique J Lavernia; Ruslan Z Valiev; Simon P Ringer
Journal:  Nat Commun       Date:  2010-09-07       Impact factor: 14.919

3.  Nanowires: Keeping track of dopants.

Authors:  Pavle V Radovanovic
Journal:  Nat Nanotechnol       Date:  2009-05       Impact factor: 39.213

4.  Large anelasticity and associated energy dissipation in single-crystalline nanowires.

Authors:  Guangming Cheng; Chunyang Miao; Qingquan Qin; Jing Li; Feng Xu; Hamed Haftbaradaran; Elizabeth C Dickey; Huajian Gao; Yong Zhu
Journal:  Nat Nanotechnol       Date:  2015-07-13       Impact factor: 39.213

5.  Spatially resolved Hall effect measurement in a single semiconductor nanowire.

Authors:  Kristian Storm; Filip Halvardsson; Magnus Heurlin; David Lindgren; Anders Gustafsson; Phillip M Wu; Bo Monemar; Lars Samuelson
Journal:  Nat Nanotechnol       Date:  2012-10-28       Impact factor: 39.213

6.  Colossal injection of catalyst atoms into silicon nanowires.

Authors:  Oussama Moutanabbir; Dieter Isheim; Horst Blumtritt; Stephan Senz; Eckhard Pippel; David N Seidman
Journal:  Nature       Date:  2013-04-04       Impact factor: 49.962

7.  Growth mechanism of carbon nanotubes: a nano Czochralski model.

Authors:  Jingyu Lu; Jianmin Miao
Journal:  Nanoscale Res Lett       Date:  2012-07-01       Impact factor: 4.703

8.  Self-inhibition effect of metal incorporation in nanoscaled semiconductors.

Authors:  Bin Zhu; Ding Yi; Yuxi Wang; Hongyu Sun; Gang Sha; Gong Zheng; Erik C Garnett; Bozhi Tian; Feng Ding; Jia Zhu
Journal:  Proc Natl Acad Sci U S A       Date:  2021-01-26       Impact factor: 12.779

9.  GaAs nanopillar-array solar cells employing in situ surface passivation.

Authors:  Giacomo Mariani; Adam C Scofield; Chung-Hong Hung; Diana L Huffaker
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

10.  n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

Authors:  Christoph Gutsche; Andrey Lysov; Ingo Regolin; Kai Blekker; Werner Prost; Franz-Josef Tegude
Journal:  Nanoscale Res Lett       Date:  2010-10-07       Impact factor: 4.703

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