Literature DB >> 21307937

Programmable nanowire circuits for nanoprocessors.

Hao Yan1, Hwan Sung Choe, SungWoo Nam, Yongjie Hu, Shamik Das, James F Klemic, James C Ellenbogen, Charles M Lieber.   

Abstract

A nanoprocessor constructed from intrinsically nanometre-scale building blocks is an essential component for controlling memory, nanosensors and other functions proposed for nanosystems assembled from the bottom up. Important steps towards this goal over the past fifteen years include the realization of simple logic gates with individually assembled semiconductor nanowires and carbon nanotubes, but with only 16 devices or fewer and a single function for each circuit. Recently, logic circuits also have been demonstrated that use two or three elements of a one-dimensional memristor array, although such passive devices without gain are difficult to cascade. These circuits fall short of the requirements for a scalable, multifunctional nanoprocessor owing to challenges in materials, assembly and architecture on the nanoscale. Here we describe the design, fabrication and use of programmable and scalable logic tiles for nanoprocessors that surmount these hurdles. The tiles were built from programmable, non-volatile nanowire transistor arrays. Ge/Si core/shell nanowires coupled to designed dielectric shells yielded single-nanowire, non-volatile field-effect transistors (FETs) with uniform, programmable threshold voltages and the capability to drive cascaded elements. We developed an architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm(2). The logic tile was programmed and operated first as a full adder with a maximal voltage gain of ten and input-output voltage matching. Then we showed that the same logic tile can be reprogrammed and used to demonstrate full-subtractor, multiplexer, demultiplexer and clocked D-latch functions. These results represent a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.

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Year:  2011        PMID: 21307937     DOI: 10.1038/nature09749

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  11 in total

1.  Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

Authors:  Y Cui; C M Lieber
Journal:  Science       Date:  2001-02-02       Impact factor: 47.728

2.  Logic gates and computation from assembled nanowire building blocks.

Authors:  Y Huang; X Duan; Y Cui; L J Lauhon; K H Kim; C M Lieber
Journal:  Science       Date:  2001-11-09       Impact factor: 47.728

3.  Logic circuits with carbon nanotube transistors.

Authors:  A Bachtold; P Hadley; T Nakanishi; C Dekker
Journal:  Science       Date:  2001-10-04       Impact factor: 47.728

4.  High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.

Authors:  Ali Javey; Hyoungsub Kim; Markus Brink; Qian Wang; Ant Ural; Jing Guo; Paul McIntyre; Paul McEuen; Mark Lundstrom; Hongjie Dai
Journal:  Nat Mater       Date:  2002-12       Impact factor: 43.841

5.  Nanowire crossbar arrays as address decoders for integrated nanosystems.

Authors:  Zhaohui Zhong; Deli Wang; Yi Cui; Marc W Bockrath; Charles M Lieber
Journal:  Science       Date:  2003-11-21       Impact factor: 47.728

6.  'Memristive' switches enable 'stateful' logic operations via material implication.

Authors:  Julien Borghetti; Gregory S Snider; Philip J Kuekes; J Joshua Yang; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2010-04-08       Impact factor: 49.962

7.  Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Authors:  Jie Xiang; Wei Lu; Yongjie Hu; Yue Wu; Hao Yan; Charles M Lieber
Journal:  Nature       Date:  2006-05-25       Impact factor: 49.962

Review 8.  Nanoelectronics from the bottom up.

Authors:  Wei Lu; Charles M Lieber
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

9.  Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

Authors:  Qiangfei Xia; Warren Robinett; Michael W Cumbie; Neel Banerjee; Thomas J Cardinali; J Joshua Yang; Wei Wu; Xuema Li; William M Tong; Dmitri B Strukov; Gregory S Snider; Gilberto Medeiros-Ribeiro; R Stanley Williams
Journal:  Nano Lett       Date:  2009-10       Impact factor: 11.189

10.  Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Authors:  SungWoo Nam; Xiaocheng Jiang; Qihua Xiong; Donhee Ham; Charles M Lieber
Journal:  Proc Natl Acad Sci U S A       Date:  2009-11-25       Impact factor: 11.205

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  50 in total

1.  Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires.

Authors:  D Laroche; G Gervais; M P Lilly; J L Reno
Journal:  Nat Nanotechnol       Date:  2011-10-30       Impact factor: 39.213

2.  Kinked p-n junction nanowire probes for high spatial resolution sensing and intracellular recording.

Authors:  Zhe Jiang; Quan Qing; Ping Xie; Ruixuan Gao; Charles M Lieber
Journal:  Nano Lett       Date:  2012-02-09       Impact factor: 11.189

3.  Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires.

Authors:  Brian Piccione; Rahul Agarwal; Yeonwoong Jung; Ritesh Agarwal
Journal:  Philos Mag (Abingdon)       Date:  2013       Impact factor: 1.864

4.  Spectral mapping of thermal conductivity through nanoscale ballistic transport.

Authors:  Yongjie Hu; Lingping Zeng; Austin J Minnich; Mildred S Dresselhaus; Gang Chen
Journal:  Nat Nanotechnol       Date:  2015-06-01       Impact factor: 39.213

5.  Photon-triggered nanowire transistors.

Authors:  Jungkil Kim; Hoo-Cheol Lee; Kyoung-Ho Kim; Min-Soo Hwang; Jin-Sung Park; Jung Min Lee; Jae-Pil So; Jae-Hyuck Choi; Soon-Hong Kwon; Carl J Barrelet; Hong-Gyu Park
Journal:  Nat Nanotechnol       Date:  2017-08-07       Impact factor: 39.213

6.  Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics.

Authors:  Dae Seung Wie; Yue Zhang; Min Ku Kim; Bongjoong Kim; Sangwook Park; Young-Joon Kim; Pedro P Irazoqui; Xiaolin Zheng; Baoxing Xu; Chi Hwan Lee
Journal:  Proc Natl Acad Sci U S A       Date:  2018-07-16       Impact factor: 11.205

7.  Multifunctional three-dimensional macroporous nanoelectronic networks for smart materials.

Authors:  Jia Liu; Chong Xie; Xiaochuan Dai; Lihua Jin; Wei Zhou; Charles M Lieber
Journal:  Proc Natl Acad Sci U S A       Date:  2013-04-08       Impact factor: 11.205

8.  A nanoscale combing technique for the large-scale assembly of highly aligned nanowires.

Authors:  Jun Yao; Hao Yan; Charles M Lieber
Journal:  Nat Nanotechnol       Date:  2013-04-21       Impact factor: 39.213

9.  Nanoscale devices: untangling nanowire assembly.

Authors:  Nathan O Weiss; Xiangfeng Duan
Journal:  Nat Nanotechnol       Date:  2013-05       Impact factor: 39.213

Review 10.  Synthetic nanoelectronic probes for biological cells and tissues.

Authors:  Bozhi Tian; Charles M Lieber
Journal:  Annu Rev Anal Chem (Palo Alto Calif)       Date:  2013-02-28       Impact factor: 10.745

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