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Literature DB >> 23459545

Measurement of mobility in dual-gated MoS₂ transistors.

Michael S Fuhrer, James Hone.

Abstract

Mesh：

Substances：
Disulfides
Molybdenum

Year: 2013 PMID： 23459545 DOI： 10.1038/nnano.2013.30

Source DB: PubMed Journal: Nat Nanotechnol ISSN： 1748-3387 Impact factor: 39.213

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6 in total

1. Integrated circuits and logic operations based on single-layer MoS2.

Authors: Branimir Radisavljevic; Michael Brian Whitwick; Andras Kis
Journal: ACS Nano Date: 2011-11-10 Impact factor: 15.881

2. Effect of top dielectric medium on gate capacitance of graphene field effect transistors: implications in mobility measurements and sensor applications.

Authors: J L Xia; F Chen; P Wiktor; D K Ferry; N J Tao
Journal: Nano Lett Date: 2010-11-19 Impact factor: 11.189

3. Two-dimensional atomic crystals.

Authors: K S Novoselov; D Jiang; F Schedin; T J Booth; V V Khotkevich; S V Morozov; A K Geim
Journal: Proc Natl Acad Sci U S A Date: 2005-07-18 Impact factor: 11.205

4. Ionic screening of charged-impurity scattering in graphene.

Authors: Fang Chen; Jilin Xia; Nongjian Tao
Journal: Nano Lett Date: 2009-04 Impact factor: 11.189

5. Single-layer MoS2 transistors.

Authors: B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal: Nat Nanotechnol Date: 2011-01-30 Impact factor: 39.213

6. Integrated circuits based on bilayer MoS₂ transistors.

Authors: Han Wang; Lili Yu; Yi-Hsien Lee; Yumeng Shi; Allen Hsu; Matthew L Chin; Lain-Jong Li; Madan Dubey; Jing Kong; Tomas Palacios
Journal: Nano Lett Date: 2012-08-10 Impact factor: 11.189

6 in total

26 in total

1. Van der Waals heterostructures.

Authors: A K Geim; I V Grigorieva
Journal: Nature Date: 2013-07-25 Impact factor: 49.962

2. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se.

Authors: Jinxiong Wu; Hongtao Yuan; Mengmeng Meng; Cheng Chen; Yan Sun; Zhuoyu Chen; Wenhui Dang; Congwei Tan; Yujing Liu; Jianbo Yin; Yubing Zhou; Shaoyun Huang; H Q Xu; Yi Cui; Harold Y Hwang; Zhongfan Liu; Yulin Chen; Binghai Yan; Hailin Peng
Journal: Nat Nanotechnol Date: 2017-04-03 Impact factor: 39.213

Measurement of mobility in dual-gated MoS₂ transistors.

1. Integrated circuits and logic operations based on single-layer MoS2.

2. Effect of top dielectric medium on gate capacitance of graphene field effect transistors: implications in mobility measurements and sensor applications.

3. Two-dimensional atomic crystals.

4. Ionic screening of charged-impurity scattering in graphene.

5. Single-layer MoS2 transistors.

6. Integrated circuits based on bilayer MoS₂ transistors.

1. Van der Waals heterostructures.

2. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se.

3. Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'.

4. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

5. Electronics based on two-dimensional materials.

6. Large-scale chemical assembly of atomically thin transistors and circuits.

7. Very fast hot carrier diffusion in unconstrained MoS₂ on a glass substrate: discovered by picosecond ET-Raman.

8. Vacancy and Doping States in Monolayer and bulk Black Phosphorus.

9. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

10. Hall and field-effect mobilities in few layered p-WSe₂ field-effect transistors.