Literature DB >> 22073905

Integrated circuits and logic operations based on single-layer MoS2.

Branimir Radisavljevic1, Michael Brian Whitwick, Andras Kis.   

Abstract

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

Mesh:

Substances:

Year:  2011        PMID: 22073905     DOI: 10.1021/nn203715c

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  94 in total

1.  Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2.

Authors:  Daniel J Trainer; Aleksei V Putilov; Cinzia Di Giorgio; Timo Saari; Baokai Wang; Mattheus Wolak; Ravini U Chandrasena; Christopher Lane; Tay-Rong Chang; Horng-Tay Jeng; Hsin Lin; Florian Kronast; Alexander X Gray; Xiaoxing Xi; Jouko Nieminen; Arun Bansil; Maria Iavarone
Journal:  Sci Rep       Date:  2017-01-13       Impact factor: 4.379

2.  Mobility engineering and a metal-insulator transition in monolayer MoS₂.

Authors:  Branimir Radisavljevic; Andras Kis
Journal:  Nat Mater       Date:  2013-06-23       Impact factor: 43.841

3.  Ultrasensitive photodetectors based on monolayer MoS2.

Authors:  Oriol Lopez-Sanchez; Dominik Lembke; Metin Kayci; Aleksandra Radenovic; Andras Kis
Journal:  Nat Nanotechnol       Date:  2013-06-09       Impact factor: 39.213

4.  Graphene is not alone.

Authors: 
Journal:  Nat Nanotechnol       Date:  2012-11       Impact factor: 39.213

5.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.

Authors:  Manish Chhowalla; Hyeon Suk Shin; Goki Eda; Lain-Jong Li; Kian Ping Loh; Hua Zhang
Journal:  Nat Chem       Date:  2013-04       Impact factor: 24.427

6.  Measurement of mobility in dual-gated MoS₂ transistors.

Authors:  Michael S Fuhrer; James Hone
Journal:  Nat Nanotechnol       Date:  2013-03       Impact factor: 39.213

7.  Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Authors:  Rajesh Kappera; Damien Voiry; Sibel Ebru Yalcin; Brittany Branch; Gautam Gupta; Aditya D Mohite; Manish Chhowalla
Journal:  Nat Mater       Date:  2014-08-31       Impact factor: 43.841

8.  Electronics based on two-dimensional materials.

Authors:  Gianluca Fiori; Francesco Bonaccorso; Giuseppe Iannaccone; Tomás Palacios; Daniel Neumaier; Alan Seabaugh; Sanjay K Banerjee; Luigi Colombo
Journal:  Nat Nanotechnol       Date:  2014-10       Impact factor: 39.213

9.  Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers.

Authors:  Junhao Lin; Ovidiu Cretu; Wu Zhou; Kazu Suenaga; Dhiraj Prasai; Kirill I Bolotin; Nguyen Thanh Cuong; Minoru Otani; Susumu Okada; Andrew R Lupini; Juan-Carlos Idrobo; Dave Caudel; Arnold Burger; Nirmal J Ghimire; Jiaqiang Yan; David G Mandrus; Stephen J Pennycook; Sokrates T Pantelides
Journal:  Nat Nanotechnol       Date:  2014-04-28       Impact factor: 39.213

10.  Raman Shifts in Electron-Irradiated Monolayer MoS2.

Authors:  William M Parkin; Adrian Balan; Liangbo Liang; Paul Masih Das; Michael Lamparski; Carl H Naylor; Julio A Rodríguez-Manzo; A T Charlie Johnson; Vincent Meunier; Marija Drndić
Journal:  ACS Nano       Date:  2016-03-25       Impact factor: 15.881

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