Literature DB >> 25286272

Electronics based on two-dimensional materials.

Gianluca Fiori1, Francesco Bonaccorso2, Giuseppe Iannaccone1, Tomás Palacios3, Daniel Neumaier4, Alan Seabaugh5, Sanjay K Banerjee6, Luigi Colombo7.   

Abstract

The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Entities:  

Year:  2014        PMID: 25286272     DOI: 10.1038/nnano.2014.207

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  87 in total

1.  Electronic structure of monolayer hexagonal boron nitride physisorbed on metal surfaces.

Authors: 
Journal:  Phys Rev Lett       Date:  1995-11-20       Impact factor: 9.161

2.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

3.  Electric field effect in atomically thin carbon films.

Authors:  K S Novoselov; A K Geim; S V Morozov; D Jiang; Y Zhang; S V Dubonos; I V Grigorieva; A A Firsov
Journal:  Science       Date:  2004-10-22       Impact factor: 47.728

4.  Current saturation in zero-bandgap, top-gated graphene field-effect transistors.

Authors:  Inanc Meric; Melinda Y Han; Andrea F Young; Barbaros Ozyilmaz; Philip Kim; Kenneth L Shepard
Journal:  Nat Nanotechnol       Date:  2008-09-21       Impact factor: 39.213

5.  The origins and limits of metal-graphene junction resistance.

Authors:  Fengnian Xia; Vasili Perebeinos; Yu-ming Lin; Yanqing Wu; Phaedon Avouris
Journal:  Nat Nanotechnol       Date:  2011-02-06       Impact factor: 39.213

6.  How good can monolayer MoS₂ transistors be?

Authors:  Youngki Yoon; Kartik Ganapathi; Sayeef Salahuddin
Journal:  Nano Lett       Date:  2011-08-02       Impact factor: 11.189

7.  Controlling electron-phonon interactions in graphene at ultrahigh carrier densities.

Authors:  Dmitri K Efetov; Philip Kim
Journal:  Phys Rev Lett       Date:  2010-12-13       Impact factor: 9.161

8.  A graphene-based hot electron transistor.

Authors:  Sam Vaziri; Grzegorz Lupina; Christoph Henkel; Anderson D Smith; Mikael Ostling; Jarek Dabrowski; Gunther Lippert; Wolfgang Mehr; Max C Lemme
Journal:  Nano Lett       Date:  2013-03-22       Impact factor: 11.189

9.  Current saturation and voltage gain in bilayer graphene field effect transistors.

Authors:  B N Szafranek; G Fiori; D Schall; D Neumaier; H Kurz
Journal:  Nano Lett       Date:  2012-02-22       Impact factor: 11.189

10.  Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates.

Authors:  Nicholas Petrone; Inanc Meric; James Hone; Kenneth L Shepard
Journal:  Nano Lett       Date:  2012-12-24       Impact factor: 11.189

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  160 in total

1.  Influence of External Heating Rate on the Structure and Porosity of Thermally Exfoliated Graphite Oxide.

Authors:  Yang Qiu; Samuel Moore; Robert Hurt; Indrek Külaots
Journal:  Carbon N Y       Date:  2016-10-21       Impact factor: 9.594

Review 2.  Assessing and Mitigating the Hazard Potential of Two-Dimensional Materials.

Authors:  Linda M Guiney; Xiang Wang; Tian Xia; André E Nel; Mark C Hersam
Journal:  ACS Nano       Date:  2018-06-18       Impact factor: 15.881

3.  Chalcogenides fill the gap.

Authors: 
Journal:  Nat Mater       Date:  2014-12       Impact factor: 43.841

4.  High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Authors:  Jinxiong Wu; Hongtao Yuan; Mengmeng Meng; Cheng Chen; Yan Sun; Zhuoyu Chen; Wenhui Dang; Congwei Tan; Yujing Liu; Jianbo Yin; Yubing Zhou; Shaoyun Huang; H Q Xu; Yi Cui; Harold Y Hwang; Zhongfan Liu; Yulin Chen; Binghai Yan; Hailin Peng
Journal:  Nat Nanotechnol       Date:  2017-04-03       Impact factor: 39.213

5.  Ten years in two dimensions: are graphene technologies ready for commercialization?

Authors: 
Journal:  Nat Nanotechnol       Date:  2014-10       Impact factor: 39.213

6.  Chemoelectronic circuits based on metal nanoparticles.

Authors:  Yong Yan; Scott C Warren; Patrick Fuller; Bartosz A Grzybowski
Journal:  Nat Nanotechnol       Date:  2016-03-14       Impact factor: 39.213

7.  A sub-femtojoule electrical spin-switch based on optically trapped polariton condensates.

Authors:  Alexander Dreismann; Hamid Ohadi; Yago Del Valle-Inclan Redondo; Ryan Balili; Yuri G Rubo; Simeon I Tsintzos; George Deligeorgis; Zacharias Hatzopoulos; Pavlos G Savvidis; Jeremy J Baumberg
Journal:  Nat Mater       Date:  2016-08-08       Impact factor: 43.841

8.  Thermochemistry and kinetics of graphite oxide exothermic decomposition for safety in large-scale storage and processing.

Authors:  Yang Qiu; Felten Collin; Robert H Hurt; Indrek Külaots
Journal:  Carbon N Y       Date:  2015-09-11       Impact factor: 9.594

9.  Buckled two-dimensional Xene sheets.

Authors:  Alessandro Molle; Joshua Goldberger; Michel Houssa; Yong Xu; Shou-Cheng Zhang; Deji Akinwande
Journal:  Nat Mater       Date:  2017-01-16       Impact factor: 43.841

10.  Near-infrared photonic phase-change properties of transition metal ditellurides.

Authors:  Yifei Li; Akshay Singh; Sergiy Krylyuk; Albert Davydov; R Jaramillo
Journal:  Proc SPIE Int Soc Opt Eng       Date:  2019
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