Literature DB >> 23459546

Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'.

B Radisavljevic, A Kis.   

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Year:  2013        PMID： 23459546     DOI： 10.1038/nnano.2013.31

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN： 1748-3387            Impact factor:   39.213


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  3 in total

1.  Two-dimensional atomic crystals.

Authors:  K S Novoselov; D Jiang; F Schedin; T J Booth; V V Khotkevich; S V Morozov; A K Geim
Journal:  Proc Natl Acad Sci U S A       Date:  2005-07-18       Impact factor: 11.205

2.  Single-layer MoS2 transistors.

Authors:  B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal:  Nat Nanotechnol       Date:  2011-01-30       Impact factor: 39.213

3.  Measurement of mobility in dual-gated MoS₂ transistors.

Authors:  Michael S Fuhrer; James Hone
Journal:  Nat Nanotechnol       Date:  2013-03       Impact factor: 39.213
  3 in total
  6 in total

1.  Exploring atomic defects in molybdenum disulphide monolayers.

Authors:  Jinhua Hong; Zhixin Hu; Matt Probert; Kun Li; Danhui Lv; Xinan Yang; Lin Gu; Nannan Mao; Qingliang Feng; Liming Xie; Jin Zhang; Dianzhong Wu; Zhiyong Zhang; Chuanhong Jin; Wei Ji; Xixiang Zhang; Jun Yuan; Ze Zhang
Journal:  Nat Commun       Date:  2015-02-19       Impact factor: 14.919

2.  Performance of arsenene and antimonene double-gate MOSFETs from first principles.

Authors:  Giovanni Pizzi; Marco Gibertini; Elias Dib; Nicola Marzari; Giuseppe Iannaccone; Gianluca Fiori
Journal:  Nat Commun       Date:  2016-08-25       Impact factor: 14.919

3.  Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts.

Authors:  Pantelis Bampoulis; Rik van Bremen; Qirong Yao; Bene Poelsema; Harold J W Zandvliet; Kai Sotthewes
Journal:  ACS Appl Mater Interfaces       Date:  2017-05-24       Impact factor: 9.229

Review 4.  Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Authors:  Sohail Ahmed; Jiabao Yi
Journal:  Nanomicro Lett       Date:  2017-08-16

5.  Hall and field-effect mobilities in few layered p-WSe₂ field-effect transistors.

Authors:  N R Pradhan; D Rhodes; S Memaran; J M Poumirol; D Smirnov; S Talapatra; S Feng; N Perea-Lopez; A L Elias; M Terrones; P M Ajayan; L Balicas
Journal:  Sci Rep       Date:  2015-03-11       Impact factor: 4.379

6.  Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.

Authors:  He Tian; Zhen Tan; Can Wu; Xiaomu Wang; Mohammad Ali Mohammad; Dan Xie; Yi Yang; Jing Wang; Lain-Jong Li; Jun Xu; Tian-Ling Ren
Journal:  Sci Rep       Date:  2014-08-11       Impact factor: 4.379
  6 in total

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