Literature DB >> 22422256

Electronics: inside story of ferroelectric memories.

Vincent Garcia1, Manuel Bibes.   

Abstract

Year:  2012        PMID： 22422256     DOI： 10.1038/483279a

Source DB:  PubMed          Journal:  Nature        ISSN： 0028-0836            Impact factor:   49.962


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  5 in total

1.  Solid-state memories based on ferroelectric tunnel junctions.

Authors:  André Chanthbouala; Arnaud Crassous; Vincent Garcia; Karim Bouzehouane; Stéphane Fusil; Xavier Moya; Julie Allibe; Bruno Dlubak; Julie Grollier; Stéphane Xavier; Cyrile Deranlot; Amir Moshar; Roger Proksch; Neil D Mathur; Manuel Bibes; Agnès Barthélémy
Journal:  Nat Nanotechnol       Date:  2011-12-04       Impact factor: 39.213

2.  Multilevel data storage memory using deterministic polarization control.

Authors:  Daesu Lee; Sang Mo Yang; Tae Heon Kim; Byung Chul Jeon; Yong Su Kim; Jong-Gul Yoon; Ho Nyung Lee; Seung Hyup Baek; Chang Beom Eom; Tae Won Noh
Journal:  Adv Mater       Date:  2011-12-12       Impact factor: 30.849

3.  Switchable ferroelectric diode and photovoltaic effect in BiFeO3.

Authors:  T Choi; S Lee; Y J Choi; V Kiryukhin; S-W Cheong
Journal:  Science       Date:  2009-02-19       Impact factor: 47.728

4.  The world's technological capacity to store, communicate, and compute information.

Authors:  Martin Hilbert; Priscila López
Journal:  Science       Date:  2011-02-10       Impact factor: 47.728

5.  FeTRAM. An organic ferroelectric material based novel random access memory cell.

Authors:  Saptarshi Das; Joerg Appenzeller
Journal:  Nano Lett       Date:  2011-08-23       Impact factor: 11.189
  5 in total
  1 in total

1.  Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

Authors:  H M Yau; Z B Yan; N Y Chan; K Au; C M Wong; C W Leung; F Y Zhang; X S Gao; J Y Dai
Journal:  Sci Rep       Date:  2015-08-04       Impact factor: 4.379
  1 in total

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