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Literature DB >> 22162010

Multilevel data storage memory using deterministic polarization control.

Daesu Lee¹, Sang Mo Yang, Tae Heon Kim, Byung Chul Jeon, Yong Su Kim, Jong-Gul Yoon, Ho Nyung Lee, Seung Hyup Baek, Chang Beom Eom, Tae Won Noh.

Abstract

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

Keywords: ferroelectric random access memory; ferroelectrics; multilevel systems; non-volatile memory

Mesh：

Year: 2011 PMID： 22162010 DOI： 10.1002/adma.201103679

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

12 in total

1. Electronics: inside story of ferroelectric memories.

Authors: Vincent Garcia; Manuel Bibes
Journal: Nature Date: 2012-03-14 Impact factor: 49.962

2. Giant Electroresistive Ferroelectric Diode on 2DEG.

Authors: Shin-Ik Kim; Hyo Jin Gwon; Dai-Hong Kim; Seong Keun Kim; Ji-Won Choi; Seok-Jin Yoon; Hye Jung Chang; Chong-Yun Kang; Beomjin Kwon; Chung-Wung Bark; Seong-Hyeon Hong; Jin-Sang Kim; Seung-Hyub Baek
Journal: Sci Rep Date: 2015-05-27 Impact factor: 4.379

Multilevel data storage memory using deterministic polarization control.

1. Electronics: inside story of ferroelectric memories.

2. Giant Electroresistive Ferroelectric Diode on 2DEG.

3. Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode.

4. Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field.

5. Kinetic control of tunable multi-state switching in ferroelectric thin films.

6. Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.

7. A multilevel nonvolatile magnetoelectric memory.

8. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.

9. Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.

10. Physical reality of the Preisach model for organic ferroelectrics.