Literature DB >> 19228998

Switchable ferroelectric diode and photovoltaic effect in BiFeO3.

T Choi1, S Lee, Y J Choi, V Kiryukhin, S-W Cheong.   

Abstract

Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as p-n junctions or metal/semiconductor interfaces with Schottky barriers. We report on a diode effect associated with the direction of bulk electric polarization in BiFeO3: a ferroelectric with a small optical gap edge of approximately 2.2 electron volts. We found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional. This diode effect switches its direction when the electric polarization is flipped by an external voltage. A substantial visible-light photovoltaic effect is observed in BiFeO3 diode structures. These results should improve understanding of charge conduction mechanisms in leaky ferroelectrics and advance the design of switchable devices combining ferroelectric, electronic, and optical functionalities.

Entities:  

Year:  2009        PMID: 19228998     DOI: 10.1126/science.1168636

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  86 in total

1.  Electronics: inside story of ferroelectric memories.

Authors:  Vincent Garcia; Manuel Bibes
Journal:  Nature       Date:  2012-03-14       Impact factor: 49.962

2.  Interface control of bulk ferroelectric polarization.

Authors:  P Yu; W Luo; D Yi; J X Zhang; M D Rossell; C-H Yang; L You; G Singh-Bhalla; S Y Yang; Q He; Q M Ramasse; R Erni; L W Martin; Y H Chu; S T Pantelides; S J Pennycook; R Ramesh
Journal:  Proc Natl Acad Sci U S A       Date:  2012-05-30       Impact factor: 11.205

3.  Electric-field control of spin waves at room temperature in multiferroic BiFeO3.

Authors:  P Rovillain; R de Sousa; Y Gallais; A Sacuto; M A Méasson; D Colson; A Forget; M Bibes; A Barthélémy; M Cazayous
Journal:  Nat Mater       Date:  2010-11-14       Impact factor: 43.841

4.  Above-bandgap voltages from ferroelectric photovoltaic devices.

Authors:  S Y Yang; J Seidel; S J Byrnes; P Shafer; C-H Yang; M D Rossell; P Yu; Y-H Chu; J F Scott; J W Ager; L W Martin; R Ramesh
Journal:  Nat Nanotechnol       Date:  2010-01-10       Impact factor: 39.213

5.  Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO3.

Authors:  T Choi; Y Horibe; H T Yi; Y J Choi; Weida Wu; S-W Cheong
Journal:  Nat Mater       Date:  2010-02-14       Impact factor: 43.841

6.  Perovskite solar cells: Switchable photovoltaics.

Authors:  Nam-Gyu Park
Journal:  Nat Mater       Date:  2014-12-08       Impact factor: 43.841

Review 7.  Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review.

Authors:  Jianyi Liu; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-12       Impact factor: 3.623

Review 8.  Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

Authors:  Ying Wang; Weijin Chen; Biao Wang; Yue Zheng
Journal:  Materials (Basel)       Date:  2014-09-11       Impact factor: 3.623

9.  Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

Authors:  Ilya Grinberg; D Vincent West; Maria Torres; Gaoyang Gou; David M Stein; Liyan Wu; Guannan Chen; Eric M Gallo; Andrew R Akbashev; Peter K Davies; Jonathan E Spanier; Andrew M Rappe
Journal:  Nature       Date:  2013-11-10       Impact factor: 49.962

10.  Giant switchable photovoltaic effect in organometal trihalide perovskite devices.

Authors:  Zhengguo Xiao; Yongbo Yuan; Yuchuan Shao; Qi Wang; Qingfeng Dong; Cheng Bi; Pankaj Sharma; Alexei Gruverman; Jinsong Huang
Journal:  Nat Mater       Date:  2014-12-08       Impact factor: 43.841

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