| Literature DB >> 21331305 |
Qun Cai, Brad Ledden, Eric Krueger, Jene A Golovchenko, Jiali Li.
Abstract
We demonstrate that 3 keV ion beams, formed from the common noble gasses, He, Ne, Ar, Kr, and Xe, can controllably "sculpt" nanometer scale pores in silicon nitride films. Single nanometer control of structural dimensions in nanopores can be achieved with all ion species despite a very wide range of sputtering yields and surface energy depositions. Heavy ions shrink pores more efficiently and make thinner pores than lighter ions. The dynamics of nanopore closing is reported for each ion species and the results are fitted to an adatom diffusion model with excellent success. We also present an experimental method for profiling the thickness of the local membrane around the nanopore based on low temperature sputtering and data is presented that provides quantitative measurements of the thickness and its dependence on ion beam species.Entities:
Year: 2006 PMID: 21331305 PMCID: PMC3039599 DOI: 10.1063/1.2216880
Source DB: PubMed Journal: J Appl Phys ISSN: 0021-8979 Impact factor: 2.546