Literature DB >> 19946283

Nanotube electronics for radiofrequency applications.

Chris Rutherglen1, Dheeraj Jain, Peter Burke.   

Abstract

Electronic devices based on carbon nanotubes are among the candidates to eventually replace silicon-based devices for logic applications. Before then, however, nanotube-based radiofrequency transistors could become competitive for high-performance analogue components such as low-noise amplifiers and power amplifiers in wireless systems. Single-walled nanotubes are well suited for use in radiofrequency transistors because they demonstrate near-ballistic electron transport and are expected to have high cut-off frequencies. To achieve the best possible performance it is necessary to use dense arrays of semiconducting nanotubes with good alignment between the nanotubes, but techniques that can economically manufacture such arrays are needed to realize this potential. Here we review progress towards nanotube electronics for radiofrequency applications in terms of device physics, circuit design and the manufacturing challenges.

Entities:  

Year:  2009        PMID: 19946283     DOI: 10.1038/nnano.2009.355

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  48 in total

1.  Small-Signal Performance and Modeling of sub-50nm nMOSFETs with f above 460-GHz.

Authors:  V Dimitrov; J Heng; K Timp; O Dimauro; R Chan; M Hafez; J Feng; T Sorsch; W Mansfield; J Miner; A Kornblit; F Klemens; J Bower; R Cirelli; E J Ferry; A Taylor; M Feng; G Timp
Journal:  Solid State Electron       Date:  2008-06-01       Impact factor: 1.901

2.  Quasi-continuous growth of ultralong carbon nanotube arrays.

Authors:  Byung Hee Hong; Ju Young Lee; Tobias Beetz; Yimei Zhu; Philip Kim; Kwang S Kim
Journal:  J Am Chem Soc       Date:  2005-11-09       Impact factor: 15.419

3.  The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors.

Authors:  Zhihong Chen; Joerg Appenzeller; Joachim Knoch; Yu-ming Lin; Phaedon Avouris
Journal:  Nano Lett       Date:  2005-07       Impact factor: 11.189

4.  Nanometer positioning, parallel alignment, and placement of single anisotropic nanoparticles using hydrodynamic forces in cylindrical droplets.

Authors:  Richa Sharma; Chang Young Lee; Jong Hyun Choi; Kejia Chen; Michael S Strano
Journal:  Nano Lett       Date:  2007-08-04       Impact factor: 11.189

5.  Langmuir-blodgett assembly of densely aligned single-walled carbon nanotubes from bulk materials.

Authors:  Xiaolin Li; Li Zhang; Xinran Wang; Iwao Shimoyama; Xiaoming Sun; Won-Seok Seo; Hongjie Dai
Journal:  J Am Chem Soc       Date:  2007-03-30       Impact factor: 15.419

6.  CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes.

Authors:  Koungmin Ryu; Alexander Badmaev; Chuan Wang; Albert Lin; Nishant Patil; Lewis Gomez; Akshay Kumar; Subhasish Mitra; H-S Philip Wong; Chongwu Zhou
Journal:  Nano Lett       Date:  2009-01       Impact factor: 11.189

7.  Preferential elimination of metallic single-walled carbon nanotubes using microwave irradiation.

Authors:  Hyung Cheoul Shim; Jin-Won Song; Yoon Keun Kwak; Soohyun Kim; Chang-Soo Han
Journal:  Nanotechnology       Date:  2009-01-15       Impact factor: 3.874

8.  Cobalt ultrathin film catalyzed ethanol chemical vapor deposition of single-walled carbon nanotubes.

Authors:  Limin Huang; Brian White; Matthew Y Sfeir; Mingyuan Huang; Henry X Huang; Shalom Wind; James Hone; Stephen O'Brien
Journal:  J Phys Chem B       Date:  2006-06-15       Impact factor: 2.991

9.  Carbon nanotube radio.

Authors:  Chris Rutherglen; Peter Burke
Journal:  Nano Lett       Date:  2007-10-17       Impact factor: 11.189

10.  Ballistic carbon nanotube field-effect transistors.

Authors:  Ali Javey; Jing Guo; Qian Wang; Mark Lundstrom; Hongjie Dai
Journal:  Nature       Date:  2003-08-07       Impact factor: 49.962

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  20 in total

1.  Binding of blood proteins to carbon nanotubes reduces cytotoxicity.

Authors:  Cuicui Ge; Jiangfeng Du; Lina Zhao; Liming Wang; Ying Liu; Denghua Li; Yanlian Yang; Ruhong Zhou; Yuliang Zhao; Zhifang Chai; Chunying Chen
Journal:  Proc Natl Acad Sci U S A       Date:  2011-10-03       Impact factor: 11.205

2.  25 years of C60.

Authors: 
Journal:  Nat Nanotechnol       Date:  2010-10       Impact factor: 39.213

3.  Electronics based on two-dimensional materials.

Authors:  Gianluca Fiori; Francesco Bonaccorso; Giuseppe Iannaccone; Tomás Palacios; Daniel Neumaier; Alan Seabaugh; Sanjay K Banerjee; Luigi Colombo
Journal:  Nat Nanotechnol       Date:  2014-10       Impact factor: 39.213

4.  Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices.

Authors:  Kaspar Snashall; Marios Constantinou; Maxim Shkunov
Journal:  J Vis Exp       Date:  2017-12-07       Impact factor: 1.355

5.  Sub-100 nm channel length graphene transistors.

Authors:  Lei Liao; Jingwei Bai; Rui Cheng; Yung-Chen Lin; Shan Jiang; Yongquan Qu; Yu Huang; Xiangfeng Duan
Journal:  Nano Lett       Date:  2010-10-13       Impact factor: 11.189

6.  Graphene transistors.

Authors:  Frank Schwierz
Journal:  Nat Nanotechnol       Date:  2010-05-30       Impact factor: 39.213

7.  Electronic sensors for alkali and alkaline earth cations based on Fullerene-C60 and silicon doped on C60 nanocages: a computational study.

Authors:  Akbar Hassanpour; Mohammad Reza Poor Heravi; Azadeh Khanmohammadi
Journal:  J Mol Model       Date:  2022-05-13       Impact factor: 1.810

8.  Half-metallic properties of single-walled polymeric manganese phthalocyanine nanotubes.

Authors:  Hongbin Jiang; Meilin Bai; Peng Wei; Lili Sun; Ziyong Shen; Shimin Hou
Journal:  Sensors (Basel)       Date:  2012-06-25       Impact factor: 3.576

9.  Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.

Authors:  Jiaxin Zheng; Lu Wang; Ruge Quhe; Qihang Liu; Hong Li; Dapeng Yu; Wai-Ning Mei; Junjie Shi; Zhengxiang Gao; Jing Lu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

10.  High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.

Authors:  Run-Chen Fang; Qing-Qing Sun; Peng Zhou; Wen Yang; Peng-Fei Wang; David Wei Zhang
Journal:  Nanoscale Res Lett       Date:  2013-02-19       Impact factor: 4.703

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