Literature DB >> 29286397

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices.

Kaspar Snashall1, Marios Constantinou1, Maxim Shkunov2.   

Abstract

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

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Year:  2017        PMID: 29286397      PMCID: PMC5755536          DOI: 10.3791/56408

Source DB:  PubMed          Journal:  J Vis Exp        ISSN: 1940-087X            Impact factor:   1.355


  15 in total

1.  High-yield self-limiting single-nanowire assembly with dielectrophoresis.

Authors:  Erik M Freer; Oleg Grachev; Xiangfeng Duan; Samuel Martin; David P Stumbo
Journal:  Nat Nanotechnol       Date:  2010-06-06       Impact factor: 39.213

Review 2.  Cells on chips.

Authors:  Jamil El-Ali; Peter K Sorger; Klavs F Jensen
Journal:  Nature       Date:  2006-07-27       Impact factor: 49.962

3.  Realization of a silicon nanowire vertical surround-gate field-effect transistor.

Authors:  Volker Schmidt; Heike Riel; Stephan Senz; Siegfried Karg; Walter Riess; Ulrich Gösele
Journal:  Small       Date:  2006-01       Impact factor: 13.281

4.  Frequency dependence of gold nanoparticle superassembly by dielectrophoresis.

Authors:  Brian C Gierhart; David G Howitt; Shiahn J Chen; Rosemary L Smith; Scott D Collins
Journal:  Langmuir       Date:  2007-10-27       Impact factor: 3.882

5.  High sensitivity SnO2 single-nanorod sensors for the detection of H2 gas at low temperature.

Authors:  Hui Huang; Y C Lee; O K Tan; W Zhou; N Peng; Q Zhang
Journal:  Nanotechnology       Date:  2009-02-24       Impact factor: 3.874

Review 6.  Nanomaterials in the environment: behavior, fate, bioavailability, and effects.

Authors:  Stephen J Klaine; Pedro J J Alvarez; Graeme E Batley; Teresa F Fernandes; Richard D Handy; Delina Y Lyon; Shaily Mahendra; Michael J McLaughlin; Jamie R Lead
Journal:  Environ Toxicol Chem       Date:  2008-09       Impact factor: 3.742

7.  Precise semiconductor nanowire placement through dielectrophoresis.

Authors:  Sourobh Raychaudhuri; Shadi A Dayeh; Deli Wang; Edward T Yu
Journal:  Nano Lett       Date:  2009-06       Impact factor: 11.189

8.  Large-scale assembly of single nanowires through capillary-assisted dielectrophoresis.

Authors:  Maéva Collet; Sven Salomon; Naiara Yohanna Klein; Florent Seichepine; Christophe Vieu; Liviu Nicu; Guilhem Larrieu
Journal:  Adv Mater       Date:  2014-11-20       Impact factor: 30.849

9.  Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications.

Authors:  T H Kim; S Y Lee; N K Cho; H K Seong; H J Choi; S W Jung; S K Lee
Journal:  Nanotechnology       Date:  2006-06-15       Impact factor: 3.874

10.  Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors.

Authors:  Marios Constantinou; Vlad Stolojan; Kiron Prabha Rajeev; Steven Hinder; Brett Fisher; Timothy D Bogart; Brian A Korgel; Maxim Shkunov
Journal:  ACS Appl Mater Interfaces       Date:  2015-09-29       Impact factor: 9.229

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