Literature DB >> 26286992

Topological Bloch bands in graphene superlattices.

Justin C W Song1, Polnop Samutpraphoot2, Leonid S Levitov3.   

Abstract

We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.

Entities:  

Keywords:  graphene; topological bands; van der Waals heterostructure

Year:  2015        PMID: 26286992      PMCID: PMC4568281          DOI: 10.1073/pnas.1424760112

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  16 in total

1.  Band structure and gaps of triangular graphene superlattices.

Authors:  F Guinea; Tony Low
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2010-12-13       Impact factor: 4.226

2.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

3.  Quantum spin Hall effect in graphene.

Authors:  C L Kane; E J Mele
Journal:  Phys Rev Lett       Date:  2005-11-23       Impact factor: 9.161

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Authors:  R V Gorbachev; F V Tikhonenko; A S Mayorov; D W Horsell; A K Savchenko
Journal:  Phys Rev Lett       Date:  2007-04-26       Impact factor: 9.161

5.  Valley-contrasting physics in graphene: magnetic moment and topological transport.

Authors:  Di Xiao; Wang Yao; Qian Niu
Journal:  Phys Rev Lett       Date:  2007-12-07       Impact factor: 9.161

6.  New generation of massless Dirac fermions in graphene under external periodic potentials.

Authors:  Cheol-Hwan Park; Li Yang; Young-Woo Son; Marvin L Cohen; Steven G Louie
Journal:  Phys Rev Lett       Date:  2008-09-19       Impact factor: 9.161

7.  Single-layer behavior and its breakdown in twisted graphene layers.

Authors:  A Luican; Guohong Li; A Reina; J Kong; R R Nair; K S Novoselov; A K Geim; E Y Andrei
Journal:  Phys Rev Lett       Date:  2011-03-21       Impact factor: 9.161

8.  Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure.

Authors:  B Hunt; J D Sanchez-Yamagishi; A F Young; M Yankowitz; B J LeRoy; K Watanabe; T Taniguchi; P Moon; M Koshino; P Jarillo-Herrero; R C Ashoori
Journal:  Science       Date:  2013-05-16       Impact factor: 47.728

9.  Valleytronics. The valley Hall effect in MoS₂ transistors.

Authors:  K F Mak; K L McGill; J Park; P L McEuen
Journal:  Science       Date:  2014-06-27       Impact factor: 47.728

10.  Substrate-induced bandgap opening in epitaxial graphene.

Authors:  S Y Zhou; G-H Gweon; A V Fedorov; P N First; W A de Heer; D-H Lee; F Guinea; A H Castro Neto; A Lanzara
Journal:  Nat Mater       Date:  2007-09-09       Impact factor: 43.841

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  1 in total

1.  An image interaction approach to quantum-phase engineering of two-dimensional materials.

Authors:  Valerio Di Giulio; P A D Gonçalves; F Javier García de Abajo
Journal:  Nat Commun       Date:  2022-09-02       Impact factor: 17.694

  1 in total

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