| Literature DB >> 16556834 |
Zhihong Chen1, Joerg Appenzeller, Yu-Ming Lin, Jennifer Sippel-Oakley, Andrew G Rinzler, Jinyao Tang, Shalom J Wind, Paul M Solomon, Phaedon Avouris.
Abstract
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.Entities:
Year: 2006 PMID: 16556834 DOI: 10.1126/science.1122797
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728