Literature DB >> 24469812

Nanowire nanocomputer as a finite-state machine.

Jun Yao1, Hao Yan, Shamik Das, James F Klemic, James C Ellenbogen, Charles M Lieber.   

Abstract

Implementation of complex computer circuits assembled from the bottom up and integrated on the nanometer scale has long been a goal of electronics research. It requires a design and fabrication strategy that can address individual nanometer-scale electronic devices, while enabling large-scale assembly of those devices into highly organized, integrated computational circuits. We describe how such a strategy has led to the design, construction, and demonstration of a nanoelectronic finite-state machine. The system was fabricated using a design-oriented approach enabled by a deterministic, bottom-up assembly process that does not require individual nanowire registration. This methodology allowed construction of the nanoelectronic finite-state machine through modular design using a multitile architecture. Each tile/module consists of two interconnected crossbar nanowire arrays, with each cross-point consisting of a programmable nanowire transistor node. The nanoelectronic finite-state machine integrates 180 programmable nanowire transistor nodes in three tiles or six total crossbar arrays, and incorporates both sequential and arithmetic logic, with extensive intertile and intratile communication that exhibits rigorous input/output matching. Our system realizes the complete 2-bit logic flow and clocked control over state registration that are required for a finite-state machine or computer. The programmable multitile circuit was also reprogrammed to a functionally distinct 2-bit full adder with 32-set matched and complete logic output. These steps forward and the ability of our unique design-oriented deterministic methodology to yield more extensive multitile systems suggest that proposed general-purpose nanocomputers can be realized in the near future.

Entities:  

Keywords:  logic circuits; memory; nanocomputing; nanoprocessor

Mesh:

Substances:

Year:  2014        PMID: 24469812      PMCID: PMC3932892          DOI: 10.1073/pnas.1323818111

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  17 in total

1.  Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

Authors:  Y Cui; C M Lieber
Journal:  Science       Date:  2001-02-02       Impact factor: 47.728

2.  Logic gates and computation from assembled nanowire building blocks.

Authors:  Y Huang; X Duan; Y Cui; L J Lauhon; K H Kim; C M Lieber
Journal:  Science       Date:  2001-11-09       Impact factor: 47.728

3.  High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.

Authors:  Ali Javey; Hyoungsub Kim; Markus Brink; Qian Wang; Ant Ural; Jing Guo; Paul McIntyre; Paul McEuen; Mark Lundstrom; Hongjie Dai
Journal:  Nat Mater       Date:  2002-12       Impact factor: 43.841

4.  Nanowire crossbar arrays as address decoders for integrated nanosystems.

Authors:  Zhaohui Zhong; Deli Wang; Yi Cui; Marc W Bockrath; Charles M Lieber
Journal:  Science       Date:  2003-11-21       Impact factor: 47.728

5.  High-performance thin-film transistors using semiconductor nanowires and nanoribbons.

Authors:  Xiangfeng Duan; Chunming Niu; Vijendra Sahi; Jian Chen; J Wallace Parce; Stephen Empedocles; Jay L Goldman
Journal:  Nature       Date:  2003-09-18       Impact factor: 49.962

6.  Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Authors:  Jie Xiang; Wei Lu; Yongjie Hu; Yue Wu; Hao Yan; Charles M Lieber
Journal:  Nature       Date:  2006-05-25       Impact factor: 49.962

7.  An integrated logic circuit assembled on a single carbon nanotube.

Authors:  Zhihong Chen; Joerg Appenzeller; Yu-Ming Lin; Jennifer Sippel-Oakley; Andrew G Rinzler; Jinyao Tang; Shalom J Wind; Paul M Solomon; Phaedon Avouris
Journal:  Science       Date:  2006-03-24       Impact factor: 47.728

8.  Programmable nanowire circuits for nanoprocessors.

Authors:  Hao Yan; Hwan Sung Choe; SungWoo Nam; Yongjie Hu; Shamik Das; James F Klemic; James C Ellenbogen; Charles M Lieber
Journal:  Nature       Date:  2011-02-10       Impact factor: 49.962

9.  Carbon nanotube computer.

Authors:  Max M Shulaker; Gage Hills; Nishant Patil; Hai Wei; Hong-Yu Chen; H-S Philip Wong; Subhasish Mitra
Journal:  Nature       Date:  2013-09-26       Impact factor: 49.962

10.  CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Authors:  Li Ding; Zhiyong Zhang; Shibo Liang; Tian Pei; Sheng Wang; Yan Li; Weiwei Zhou; Jie Liu; Lian-Mao Peng
Journal:  Nat Commun       Date:  2012-02-14       Impact factor: 14.919

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  7 in total

1.  Digital Micromirror Device (DMD)-Based High-Cycle Torsional Fatigue Testing Micromachine for 1D Nanomaterials.

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2.  Atomic structures of self-assembled epitaxially grown GdSi2 nanowires on Si(001) by STM.

Authors:  Sun Kyu Song; Tae-Hwan Kim; Han Woong Yeom
Journal:  Sci Rep       Date:  2019-02-04       Impact factor: 4.379

3.  Development of a highly controlled system for large-area, directional printing of quasi-1D nanomaterials.

Authors:  Adamos Christou; Fengyuan Liu; Ravinder Dahiya
Journal:  Microsyst Nanoeng       Date:  2021-10-19       Impact factor: 7.127

Review 4.  Functional Devices from Bottom-Up Silicon Nanowires: A Review.

Authors:  Tabassom Arjmand; Maxime Legallais; Thi Thu Thuy Nguyen; Pauline Serre; Monica Vallejo-Perez; Fanny Morisot; Bassem Salem; Céline Ternon
Journal:  Nanomaterials (Basel)       Date:  2022-03-22       Impact factor: 5.076

5.  Bioinspired two-in-one nanotransistor sensor for the simultaneous measurements of electrical and mechanical cellular responses.

Authors:  Hongyan Gao; Feiyu Yang; Kianoosh Sattari; Xian Du; Tianda Fu; Shuai Fu; Xiaomeng Liu; Jian Lin; Yubing Sun; Jun Yao
Journal:  Sci Adv       Date:  2022-08-24       Impact factor: 14.957

Review 6.  CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization.

Authors:  Duy Phu Tran; Thuy Thi Thanh Pham; Bernhard Wolfrum; Andreas Offenhäusser; Benjamin Thierry
Journal:  Materials (Basel)       Date:  2018-05-11       Impact factor: 3.623

7.  Heterogeneous integration of contact-printed semiconductor nanowires for high-performance devices on large areas.

Authors:  Carlos García Núñez; Fengyuan Liu; William Taube Navaraj; Adamos Christou; Dhayalan Shakthivel; Ravinder Dahiya
Journal:  Microsyst Nanoeng       Date:  2018-08-13       Impact factor: 7.127

  7 in total

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