Literature DB >> 10581304

Effect of cysteine substitutions on the topology of the S4 segment of the Shaker potassium channel: implications for molecular models of gating.

M H Wang1, S P Yusaf, D J Elliott, D Wray, A Sivaprasadarao.   

Abstract

1. The gating properties of voltage-gated potassium channels are largely determined by the amino acid sequence of their S4 segments. To investigate the nature of S4 movement during gating, we introduced single cysteines into the S4 segment of the Shaker potassium channel and expressed the mutants in Xenopus oocytes. We then measured the conductance-voltage (g-V) relationships and the rate and the voltage dependence of movement of the engineered cysteines, using p-chloromercuribenzene sulphonate (pCMBS) as a probe. 2. Mutation of charged residues at positions 362, 365 and 368, but not the uncharged residues (positions 360, 361, 363, 364 and 366), to cysteines shifted the g-V relationships to more positive potentials. Mutant channels in which cysteines replaced the charged residues at positions 362 and 365 (R362C and R365C) reacted faster with pCMBS than those in which cysteines were introduced in place of uncharged residues at positions 360 and 361 (I360C and L361C). Furthermore, the R365C mutant channel reacted with pCMBS even at hyperpolarised (-120 mV) potentials. Currents expressed by the doubly mutated R365S/V367C and R368S/V367C channels, but not the singly mutated V367C channel, were inhibited by pCMBS. Moreover, the R368C mutant channel was also affected by pCMBS. 3. Voltage dependence of block by pCMBS (2 min exposure) was steeper for L366C than for L361C and V363C mutant channels (effective charge 2.19, 1. 41 and 1.45, respectively). The voltage dependence of the pCMBS effect was also shifted to more depolarising potentials the deeper in the membrane the position of the residue mutated to cysteine (voltages for half-maximal effect -107, -94 and -73 mV for positions 361, 363 and 366, respectively). 4. Our data show firstly that charge-neutralising mutations in S4 alter the topology of this region such that the membrane-spanning portion of S4 is reduced. Secondly, our data for the other mutant channels suggest that S4 might move in at least two sequential steps, and can move up to its maximal limit even at the resting potential of the cell.

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Year:  1999        PMID: 10581304      PMCID: PMC2269665          DOI: 10.1111/j.1469-7793.1999.00315.x

Source DB:  PubMed          Journal:  J Physiol        ISSN: 0022-3751            Impact factor:   5.182


  24 in total

Review 1.  Voltage-dependent gating of ionic channels.

Authors:  F Bezanilla; E Stefani
Journal:  Annu Rev Biophys Biomol Struct       Date:  1994

2.  Contribution of the S4 segment to gating charge in the Shaker K+ channel.

Authors:  S K Aggarwal; R MacKinnon
Journal:  Neuron       Date:  1996-06       Impact factor: 17.173

3.  Voltage-sensing residues in the S2 and S4 segments of the Shaker K+ channel.

Authors:  S A Seoh; D Sigg; D M Papazian; F Bezanilla
Journal:  Neuron       Date:  1996-06       Impact factor: 17.173

4.  Measurement of the movement of the S4 segment during the activation of a voltage-gated potassium channel.

Authors:  S P Yusaf; D Wray; A Sivaprasadarao
Journal:  Pflugers Arch       Date:  1996 Nov-Dec       Impact factor: 3.657

5.  N-type inactivation and the S4-S5 region of the Shaker K+ channel.

Authors:  M Holmgren; M E Jurman; G Yellen
Journal:  J Gen Physiol       Date:  1996-09       Impact factor: 4.086

6.  Molecular basis of charge movement in voltage-gated sodium channels.

Authors:  N Yang; A L George; R Horn
Journal:  Neuron       Date:  1996-01       Impact factor: 17.173

7.  An engineered cysteine in the external mouth of a K+ channel allows inactivation to be modulated by metal binding.

Authors:  G Yellen; D Sodickson; T Y Chen; M E Jurman
Journal:  Biophys J       Date:  1994-04       Impact factor: 4.033

8.  Gating of Shaker K+ channels: II. The components of gating currents and a model of channel activation.

Authors:  F Bezanilla; E Perozo; E Stefani
Journal:  Biophys J       Date:  1994-04       Impact factor: 4.033

9.  Transmembrane movement of the shaker K+ channel S4.

Authors:  H P Larsson; O S Baker; D S Dhillon; E Y Isacoff
Journal:  Neuron       Date:  1996-02       Impact factor: 17.173

10.  Electrostatic interactions of S4 voltage sensor in Shaker K+ channel.

Authors:  D M Papazian; X M Shao; S A Seoh; A F Mock; Y Huang; D H Wainstock
Journal:  Neuron       Date:  1995-06       Impact factor: 17.173

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  14 in total

1.  Electrostatic model of S4 motion in voltage-gated ion channels.

Authors:  Harold Lecar; H Peter Larsson; Michael Grabe
Journal:  Biophys J       Date:  2003-11       Impact factor: 4.033

2.  Independent and cooperative motions of the Kv1.2 channel: voltage sensing and gating.

Authors:  Adva Yeheskel; Turkan Haliloglu; Nir Ben-Tal
Journal:  Biophys J       Date:  2010-05-19       Impact factor: 4.033

3.  Molecular mechanism of voltage sensor movements in a potassium channel.

Authors:  David J S Elliott; Edward J Neale; Qadeer Aziz; James P Dunham; Tim S Munsey; Malcolm Hunter; Asipu Sivaprasadarao
Journal:  EMBO J       Date:  2004-11-25       Impact factor: 11.598

4.  S3b amino acid residues do not shuttle across the bilayer in voltage-dependent Shaker K+ channels.

Authors:  Carlos Gonzalez; Francisco J Morera; Eduardo Rosenmann; Osvaldo Alvarez; Ramon Latorre
Journal:  Proc Natl Acad Sci U S A       Date:  2005-03-17       Impact factor: 11.205

Review 5.  Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions.

Authors:  J Alfredo Freites; Douglas J Tobias
Journal:  J Membr Biol       Date:  2015-05-14       Impact factor: 1.843

6.  Constraints on voltage sensor movement in the shaker K+ channel.

Authors:  Rachel B Darman; Allison A Ivy; Vina Ketty; Robert O Blaustein
Journal:  J Gen Physiol       Date:  2006-11-13       Impact factor: 4.086

7.  Fast and slow voltage sensor rearrangements during activation gating in Kv1.2 channels detected using tetramethylrhodamine fluorescence.

Authors:  Andrew James Horne; Christian Joseph Peters; Thomas William Claydon; David Fedida
Journal:  J Gen Physiol       Date:  2010-07       Impact factor: 4.086

8.  Specificity of charge-carrying residues in the voltage sensor of potassium channels.

Authors:  Christopher A Ahern; Richard Horn
Journal:  J Gen Physiol       Date:  2004-02-09       Impact factor: 4.086

9.  Gating charges in the activation and inactivation processes of the HERG channel.

Authors:  Mei Zhang; Jie Liu; Gea-Ny Tseng
Journal:  J Gen Physiol       Date:  2004-11-15       Impact factor: 4.086

10.  Characterization of the PCMBS-dependent modification of KCa3.1 channel gating.

Authors:  Mark A Bailey; Michael Grabe; Daniel C Devor
Journal:  J Gen Physiol       Date:  2010-09-13       Impact factor: 4.086

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