Literature DB >> 7605638

Electrostatic interactions of S4 voltage sensor in Shaker K+ channel.

D M Papazian1, X M Shao, S A Seoh, A F Mock, Y Huang, D H Wainstock.   

Abstract

The S4 segment comprises part of the voltage sensor in Shaker K+ channels. We have used a strategy similar to intragenic suppression, but without a genetic selection, to identify electrostatic interactions of the S4 segment that may be important in the mechanism of voltage-dependent activation. The S4 neutralization mutations K374Q and R377Q block maturation of the protein, suggesting that they prevent proper folding. K374Q is specifically and efficiently rescued by the second site mutations E293Q and D316N, located in putative transmembrane segments S2 and S3, respectively. These results suggest that K374, E293, and D316 form a network of strong, local, electrostatic interactions that stabilize the structure of the channel. Some other double mutant combinations result in inefficient suppression, identifying weak, presumably long-range electrostatic interactions. A simple structural hypothesis is proposed to account for the effects of the rescued double mutant combinations on the relative stabilities of open and closed channel conformations.

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Year:  1995        PMID: 7605638     DOI: 10.1016/0896-6273(95)90276-7

Source DB:  PubMed          Journal:  Neuron        ISSN: 0896-6273            Impact factor:   17.173


  195 in total

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Authors:  H Zhong; B Li; T Scheuer; W A Catterall
Journal:  Proc Natl Acad Sci U S A       Date:  2001-04-10       Impact factor: 11.205

Review 2.  Molecular properties and physiological roles of ion channels in the immune system.

Authors:  M D Cahalan; H Wulff; K G Chandy
Journal:  J Clin Immunol       Date:  2001-07       Impact factor: 8.317

3.  Integration of Shaker-type K+ channel, KAT1, into the endoplasmic reticulum membrane: synergistic insertion of voltage-sensing segments, S3-S4, and independent insertion of pore-forming segments, S5-P-S6.

Authors:  Yoko Sato; Masao Sakaguchi; Shinobu Goshima; Tatsunosuke Nakamura; Nobuyuki Uozumi
Journal:  Proc Natl Acad Sci U S A       Date:  2001-12-26       Impact factor: 11.205

4.  The screw-helical voltage gating of ion channels.

Authors:  R D Keynes; F Elinder
Journal:  Proc Biol Sci       Date:  1999-04-22       Impact factor: 5.349

5.  A physical model of potassium channel activation: from energy landscape to gating kinetics.

Authors:  Daniel Sigg; Francisco Bezanilla
Journal:  Biophys J       Date:  2003-06       Impact factor: 4.033

6.  Electrostatic model of S4 motion in voltage-gated ion channels.

Authors:  Harold Lecar; H Peter Larsson; Michael Grabe
Journal:  Biophys J       Date:  2003-11       Impact factor: 4.033

7.  Molecular basis of slow activation of the human ether-a-go-go related gene potassium channel.

Authors:  Rajesh N Subbiah; Catherine E Clarke; David J Smith; JingTing Zhao; Terence J Campbell; Jamie I Vandenberg
Journal:  J Physiol       Date:  2004-06-04       Impact factor: 5.182

8.  Effects of Kv1.2 intracellular regions on activation of Kv2.1 channels.

Authors:  Annette Scholle; Thomas Zimmer; Rolf Koopmann; Birgit Engeland; Olaf Pongs; Klaus Benndorf
Journal:  Biophys J       Date:  2004-08       Impact factor: 4.033

9.  Models of the structure and voltage-gating mechanism of the shaker K+ channel.

Authors:  Stewart R Durell; Indira H Shrivastava; H Robert Guy
Journal:  Biophys J       Date:  2004-10       Impact factor: 4.033

10.  Gating-induced large aqueous volumetric remodeling and aspartate tolerance in the voltage sensor domain of Shaker K+ channels.

Authors:  Ignacio Díaz-Franulic; Vivian González-Pérez; Hans Moldenhauer; Nieves Navarro-Quezada; David Naranjo
Journal:  Proc Natl Acad Sci U S A       Date:  2018-07-23       Impact factor: 11.205

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