Literature DB >> 8663993

Contribution of the S4 segment to gating charge in the Shaker K+ channel.

S K Aggarwal1, R MacKinnon.   

Abstract

Voltage-activated ion channels respond to changes in membrane voltage by coupling the movement of charges to channel opening. A K+ channel-specific radioligand was designed and used to determine the origin of these gating charges in the Shaker K+ channel. Opening of a Shaker K+ channel is associated with a displacement of 13.6 electron charge units. Gating charge contributions were determined for six of the seven positive charges in the S4 segment, an unusual amino acid sequence in voltage-activated cation channels consisting of repeating basic residues at every third position. Charge-neutralizing mutations of the first four positive charges led to large decreases (approximately 4 electron charge units each) in the gating charge; however, the gating charge of Shaker delta 10, a Shaker K+ channel with 10 altered nonbasic residues in its S4 segment, was found to be identical to the wild-type channel. These findings show that movement of the NH2-terminal half but not the CO2H-terminal end of the S4 segment underlies gating charge, and that this portion of the S4 segment appears to move across the entire transmembrane voltage difference in association with channel activation.

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Year:  1996        PMID: 8663993     DOI: 10.1016/s0896-6273(00)80143-9

Source DB:  PubMed          Journal:  Neuron        ISSN: 0896-6273            Impact factor:   17.173


  369 in total

1.  Localization of the extracellular end of the voltage sensor S4 in a potassium channel.

Authors:  F Elinder; P Arhem; H P Larsson
Journal:  Biophys J       Date:  2001-04       Impact factor: 4.033

2.  Variable ratio of permeability to gating charge of rBIIA sodium channels and sodium influx in Xenopus oocytes.

Authors:  N G Greeff; F J Kühn
Journal:  Biophys J       Date:  2000-11       Impact factor: 4.033

3.  The outermost lysine in the S4 of domain III contributes little to the gating charge in sodium channels.

Authors:  Michael F Sheets; Dorothy A Hanck
Journal:  Biophys J       Date:  2002-06       Impact factor: 4.033

4.  The screw-helical voltage gating of ion channels.

Authors:  R D Keynes; F Elinder
Journal:  Proc Biol Sci       Date:  1999-04-22       Impact factor: 5.349

5.  Role of transmembrane segment S5 on gating of voltage-dependent K+ channels.

Authors:  C C Shieh; K G Klemic; G E Kirsch
Journal:  J Gen Physiol       Date:  1997-06       Impact factor: 4.086

6.  Allosteric gating of a large conductance Ca-activated K+ channel.

Authors:  D H Cox; J Cui; R W Aldrich
Journal:  J Gen Physiol       Date:  1997-09       Impact factor: 4.086

7.  Gating-induced large aqueous volumetric remodeling and aspartate tolerance in the voltage sensor domain of Shaker K+ channels.

Authors:  Ignacio Díaz-Franulic; Vivian González-Pérez; Hans Moldenhauer; Nieves Navarro-Quezada; David Naranjo
Journal:  Proc Natl Acad Sci U S A       Date:  2018-07-23       Impact factor: 11.205

8.  Initial response of the potassium channel voltage sensor to a transmembrane potential.

Authors:  Werner Treptow; Mounir Tarek; Michael L Klein
Journal:  J Am Chem Soc       Date:  2009-02-18       Impact factor: 15.419

9.  Proton currents constrain structural models of voltage sensor activation.

Authors:  Aaron L Randolph; Younes Mokrab; Ashley L Bennett; Mark Sp Sansom; Ian Scott Ramsey
Journal:  Elife       Date:  2016-08-30       Impact factor: 8.140

10.  Molecular coupling between voltage sensor and pore opening in the Arabidopsis inward rectifier K+ channel KAT1.

Authors:  Ramon Latorre; Riccardo Olcese; Claudia Basso; Carlos Gonzalez; Fabian Munoz; Diego Cosmelli; Osvaldo Alvarez
Journal:  J Gen Physiol       Date:  2003-10       Impact factor: 4.086

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