Literature DB >> 8663992

Voltage-sensing residues in the S2 and S4 segments of the Shaker K+ channel.

S A Seoh1, D Sigg, D M Papazian, F Bezanilla.   

Abstract

The activation of Shaker K+ channels is steeply voltage dependent. To determine whether conserved charged amino acids in putative transmembrane segments S2, S3, and S4 contribute to the gating charge of the channel, the total gating charge movement per channel was measured in channels containing neutralization mutations. Of eight residues tested, four contributed significantly to the gating charge: E293, an acidic residue in S2, and R365, R368, and R371, three basic residues in the S4 segment. The results indicate that these residues are a major component of the voltage sensor. Furthermore, the S4 segment is not solely responsible for gating charge movement in Shaker K+ channels.

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Year:  1996        PMID: 8663992     DOI: 10.1016/s0896-6273(00)80142-7

Source DB:  PubMed          Journal:  Neuron        ISSN: 0896-6273            Impact factor:   17.173


  369 in total

1.  Control of gating mode by a single amino acid residue in transmembrane segment IS3 of the N-type Ca2+ channel.

Authors:  H Zhong; B Li; T Scheuer; W A Catterall
Journal:  Proc Natl Acad Sci U S A       Date:  2001-04-10       Impact factor: 11.205

2.  Localization of the extracellular end of the voltage sensor S4 in a potassium channel.

Authors:  F Elinder; P Arhem; H P Larsson
Journal:  Biophys J       Date:  2001-04       Impact factor: 4.033

Review 3.  Molecular properties and physiological roles of ion channels in the immune system.

Authors:  M D Cahalan; H Wulff; K G Chandy
Journal:  J Clin Immunol       Date:  2001-07       Impact factor: 8.317

4.  Integration of Shaker-type K+ channel, KAT1, into the endoplasmic reticulum membrane: synergistic insertion of voltage-sensing segments, S3-S4, and independent insertion of pore-forming segments, S5-P-S6.

Authors:  Yoko Sato; Masao Sakaguchi; Shinobu Goshima; Tatsunosuke Nakamura; Nobuyuki Uozumi
Journal:  Proc Natl Acad Sci U S A       Date:  2001-12-26       Impact factor: 11.205

5.  The outermost lysine in the S4 of domain III contributes little to the gating charge in sodium channels.

Authors:  Michael F Sheets; Dorothy A Hanck
Journal:  Biophys J       Date:  2002-06       Impact factor: 4.033

6.  The screw-helical voltage gating of ion channels.

Authors:  R D Keynes; F Elinder
Journal:  Proc Biol Sci       Date:  1999-04-22       Impact factor: 5.349

7.  Allosteric gating of a large conductance Ca-activated K+ channel.

Authors:  D H Cox; J Cui; R W Aldrich
Journal:  J Gen Physiol       Date:  1997-09       Impact factor: 4.086

8.  Gating-induced large aqueous volumetric remodeling and aspartate tolerance in the voltage sensor domain of Shaker K+ channels.

Authors:  Ignacio Díaz-Franulic; Vivian González-Pérez; Hans Moldenhauer; Nieves Navarro-Quezada; David Naranjo
Journal:  Proc Natl Acad Sci U S A       Date:  2018-07-23       Impact factor: 11.205

9.  Proton currents constrain structural models of voltage sensor activation.

Authors:  Aaron L Randolph; Younes Mokrab; Ashley L Bennett; Mark Sp Sansom; Ian Scott Ramsey
Journal:  Elife       Date:  2016-08-30       Impact factor: 8.140

10.  Molecular coupling between voltage sensor and pore opening in the Arabidopsis inward rectifier K+ channel KAT1.

Authors:  Ramon Latorre; Riccardo Olcese; Claudia Basso; Carlos Gonzalez; Fabian Munoz; Diego Cosmelli; Osvaldo Alvarez
Journal:  J Gen Physiol       Date:  2003-10       Impact factor: 4.086

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