| Literature DB >> 35517642 |
Lara Tejerina1, Alexandros G Rapidis2, Michel Rickhaus1, Petri Murto3, Zewdneh Genene3, Ergang Wang3, Alessandro Minotto2, Harry L Anderson1, Franco Cacialli2.
Abstract
The luminescence and electroluminescence of an ethyne-linked zinc(ii) porphyrin pentamer have been investigated, by testing blends in two different conjugated polymer matrices, at a range of concentrations. The best results were obtained for blends with the conjugated polymer PIDT-2TPD, at a porphyrin loading of 1 wt%. This host matrix was selected because the excellent overlap between its emission spectrum and the low-energy region of the absorption spectrum of the porphyrin oligomer leads to efficient energy transfer. Thin films of this blend exhibit intense fluorescence in the near-infrared (NIR), with a peak emission wavelength of 886 nm and a photoluminescent quantum yield (PLQY) of 27% in the solid state. Light-emitting diodes (LEDs) fabricated with this blend as the emissive layer achieve average external quantum efficiencies (EQE) of 2.0% with peak emission at 830 nm and a turn-on voltage of 1.6 V. This performance is remarkable for a singlet NIR-emitter; 93% of the photons are emitted in the NIR (λ > 700 nm), indicating that conjugated porphyrin oligomers are promising emitters for non-toxic NIR OLEDs. This journal is © The Royal Society of Chemistry.Entities:
Year: 2022 PMID: 35517642 PMCID: PMC9009301 DOI: 10.1039/d1tc05951c
Source DB: PubMed Journal: J Mater Chem C Mater ISSN: 2050-7526 Impact factor: 7.393
Fig. 1(a) Molecular structures of l-P5 porphyrin pentamer, and host polymers F8BT and PIDT-2TPD. CPDIPS = Si(i-Pr)2(CH2)3CN. (b) Multilayer OLED device architecture. From left to right: indium tin oxide (ITO) coated glass anode, poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) hole-transporting layer, blended active layer (F8BT:l-P5 or PIDT-2TPD:l-P5), and Ca/Al cathode. Layer thicknesses are in nm (c) Schematic band diagram representing the HOMO (bottom of bar) and LUMO (top of bar) energy levels of F8BT and PIDT-2TPD. The energies of the frontier orbitals of l-P5 determined electrochemically are represented in black in the emissive layer (see Fig. S1 for electrochemical data, ESI†). The HOMO level of the PEDOT:PSS and the work functions of the electrodes are indicated.
Fig. 2Absorption (a and c) and PL (b and d) spectra of F8BT:l-P5 and PIDT-2TPD:l-P5 blends in solid-state thin films at different l-P5 loadings (1.0, 2.5, and 5.0 wt%). The PL spectra are normalized so that the areas of the peaks are proportional to the PLQYs. PLQY values measured over the whole emission spectrum are reported in the legend along with the fraction emitted in the NIR region (λ > 700 nm). PLQY values were measured with an integrated sphere with either a 450 or 520 nm laser diode (in air, at room temperature) for the F8BT:l-P5 and PIDT-2TPD:l-P5 blends, respectively.
Fig. 3Characteristics of OLEDs incorporating PIDT-2TPD:l-P5 (red lines) and F8BT:l-P5 (green lines) blends with 1.0 wt% of l-P5. (a) EL spectra collected at the maximum radiance voltages indicated in the legend; (b) current density (solid) and radiance (dashed) vs. applied bias characteristics; (c) EQE versus current density plot.
OLED performance parameters
| Device |
| 〈 | 〈 | EQEMAX | 〈EQEMAX〉 | NIR EL |
|---|---|---|---|---|---|---|
| PIDT-2TPD: | 5 | 1.60 ± 0.01 | 9.43 ± 1.58 | 2.47 | 1.98 ± 0.35 | 93 |
| PIDT-2TPD: | 6 | 1.60 ± 0.06 | 2.09 ± 0.15 | 1.54 | 1.40 ± 0.09 | 96 |
| F8BT: | 6 | 4.73 ± 1.25 | 1.42 ± 0.44 | 2.56 | 1.79 ± 0.84 | 84 |
| F8BT: | 5 | 8.70 ± 0.66 | 0.48 ± 0.19 | 1.07 | 0.92 ± 0.11 | 93 |
Number of devices.
Voltage at which the light output exceeds the noise level, as extrapolated from the R vs. V characteristics.
Average maximum radiance.
Maximum external quantum efficiency.
Average external quantum efficiency.
Photons emitted in the NIR region (i.e. λ > 700 nm).