| Literature DB >> 27677240 |
Mauro Sassi1, Nunzio Buccheri1, Myles Rooney1, Chiara Botta2, Francesco Bruni1, Umberto Giovanella2, Sergio Brovelli1, Luca Beverina1.
Abstract
Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy.Entities:
Year: 2016 PMID: 27677240 PMCID: PMC5039715 DOI: 10.1038/srep34096
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) Chemical structures of the DPP derivatives and the semiconductive polymers used for the fabrication of the NIR-OLEDs. (b) Absorption (black line) and photoluminescence (red line, excitation at 620 nm) spectra of a spin-coated film of DPPcy on glass. Inset shows a photograph of DPPcy in toluene taken with a UV-Vis filtered camera under UV illumination at 400 nm. (c) Device structure of a multilayer NIR-OLED: ITO/PEDOT:PSS/PVK/F8BT:DPPcy/Ba/Al. (d) Flat-band energy level diagram of the device (with respect to the vacuum level).
Figure 2(a) Cyclic voltammetry and (b) differential pulse voltammetry traces of DPP-CN (black lines) and DPPcy (red lines) in a 2:1 CH3CN:CH2Cl2 solution with tetrabutylammoniumtetrafluoroborate 0.1 M as the supporting electrolyte.
Figure 3(a) Absorption and PL spectra under 405 nm excitation (indicated by a purple arrow) of F8BT:DPPcy (85:15 wt%) blended films as-spun (top curves) and thermally annealed at 130 °C for 15 minutes in nitrogen (bottom curves). (b) Time decay curves of F8BT photoluminescence at 535 nm for as-spun (black line) and thermally annealed (red line) films. The photoluminescence decay curve of a film of pure F8BT at 535 nm is reported as a blue line for direct comparison with the blended films (excitation at 405 nm). The single exponential fit of the decay curves are shown as solid black lines. Height- and phase- (inset) mode AFM images of (c) as-spun and (d) thermally annealed F8BT:DPPcy films. The white bar corresponds to 250 nm. (e,f) Respective fluorescence microscope images. The white bar corresponds to 3 μm.
Figure 4(a) EL spectrum of an ITO/PEDOT:PSS/PVK/F8BT:DPPcy(85:15 wt%)/Ba/Al OLED incorporating a thermally annealed active layer. A photograph of a working OLED collected with a UV-Vis filtered IR camera is reported in the inset, showing uniform bright IR emission over the whole device area (driving bias 5.5 V). (b) J-Re-V response of the same device and (inset) of an OLED with the same architecture embedding a pristine blend. (c) EQE vs. J of OLEDs incorporating pristine (grey circles) and annealed (red circles) films of F8BT:DPPcy 85:15 wt% blends. (d) Evolution of Re with the device operation time at constant J = 10 mA/cm2 for an OLED embedding the annealed blend.