Literature DB >> 33603012

Theory and experimental verification of configurable computing with stochastic memristors.

Rawan Naous1,2, Anne Siemon3,4, Michael Schulten3,4, Hamzah Alahmadi1, Andreas Kindsmüller3,4, Michael Lübben3,4, Arne Heittmann4,5, Rainer Waser3,4,5,6, Khaled Nabil Salama1, Stephan Menzel7,8.   

Abstract

The inevitable variability within electronic devices causes strict constraints on operation, reliability and scalability of the circuit design. However, when a compromise arises among the different performance metrics, area, time and energy, variability then loosens the tight requirements and allows for further savings in an alternative design scope. To that end, unconventional computing approaches are revived in the form of approximate computing, particularly tuned for resource-constrained mobile computing. In this paper, a proof-of-concept of the approximate computing paradigm using memristors is demonstrated. Stochastic memristors are used as the main building block of probabilistic logic gates. As will be shown in this paper, the stochasticity of memristors' switching characteristics is tightly bound to the supply voltage and hence to power consumption. By scaling of the supply voltage to appropriate levels stochasticity gets increased. In order to guide the design process of approximate circuits based on memristors a realistic device model needs to be elaborated with explicit emphasis of the probabilistic switching behavior. Theoretical formulation, probabilistic analysis, and simulation of the underlying logic circuits and operations are introduced. Moreover, the expected output behavior is verified with the experimental measurements of valence change memory cells. Hence, it is shown how the precision of the output is varied for the sake of the attainable gains at different levels of available design metrics. This approach represents the first proposition along with physical verification and mapping to real devices that combines stochastic memristors into unconventional computing approaches.

Entities:  

Year:  2021        PMID: 33603012      PMCID: PMC7893165          DOI: 10.1038/s41598-021-83382-y

Source DB:  PubMed          Journal:  Sci Rep        ISSN: 2045-2322            Impact factor:   4.379


  8 in total

1.  Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operations.

Authors:  E Linn; R Rosezin; S Tappertzhofen; U Böttger; R Waser
Journal:  Nanotechnology       Date:  2012-08-03       Impact factor: 3.874

2.  'Memristive' switches enable 'stateful' logic operations via material implication.

Authors:  Julien Borghetti; Gregory S Snider; Philip J Kuekes; J Joshua Yang; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2010-04-08       Impact factor: 49.962

3.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Authors:  Myoung-Jae Lee; Chang Bum Lee; Dongsoo Lee; Seung Ryul Lee; Man Chang; Ji Hyun Hur; Young-Bae Kim; Chang-Jung Kim; David H Seo; Sunae Seo; U-In Chung; In-Kyeong Yoo; Kinam Kim
Journal:  Nat Mater       Date:  2011-07-10       Impact factor: 43.841

4.  Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution.

Authors:  Gilberto Medeiros-Ribeiro; Frederick Perner; Richard Carter; Hisham Abdalla; Matthew D Pickett; R Stanley Williams
Journal:  Nanotechnology       Date:  2011-01-24       Impact factor: 3.874

5.  Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices.

Authors:  Christoph Baeumer; Richard Valenta; Christoph Schmitz; Andrea Locatelli; Tevfik Onur Menteş; Steven P Rogers; Alessandro Sala; Nicolas Raab; Slavomir Nemsak; Moonsub Shim; Claus M Schneider; Stephan Menzel; Rainer Waser; Regina Dittmann
Journal:  ACS Nano       Date:  2017-07-06       Impact factor: 15.881

6.  Switching kinetics of electrochemical metallization memory cells.

Authors:  Stephan Menzel; Stefan Tappertzhofen; Rainer Waser; Ilia Valov
Journal:  Phys Chem Chem Phys       Date:  2013-04-03       Impact factor: 3.676

7.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

8.  Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation.

Authors:  Muxi Yu; Yimao Cai; Zongwei Wang; Yichen Fang; Yefan Liu; Zhizhen Yu; Yue Pan; Zhenxing Zhang; Jing Tan; Xue Yang; Ming Li; Ru Huang
Journal:  Sci Rep       Date:  2016-02-17       Impact factor: 4.379

  8 in total

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