Literature DB >> 23549450

Switching kinetics of electrochemical metallization memory cells.

Stephan Menzel1, Stefan Tappertzhofen, Rainer Waser, Ilia Valov.   

Abstract

The strongly nonlinear switching kinetics of electrochemical metallization memory (ECM) cells are investigated using an advanced 1D simulation model. It is based on the electrochemical growth and dissolution of a Ag or Cu filament within a solid thin film and accounts for nucleation effects, charge transfer, and cation drift. The model predictions are consistent with experimental switching results of a time range of 12 orders of magnitude obtained from silver iodide (AgI) based ECM cells. By analyzing the simulation results the electrochemical processes limiting the switching kinetics are revealed. This study provides new insights into the understanding of the limiting electrochemical processes determining the switching kinetics of ECM cells.

Entities:  

Year:  2013        PMID: 23549450     DOI: 10.1039/c3cp50738f

Source DB:  PubMed          Journal:  Phys Chem Chem Phys        ISSN: 1463-9076            Impact factor:   3.676


  12 in total

1.  Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells.

Authors:  Nicolas Onofrio; David Guzman; Alejandro Strachan
Journal:  Nat Mater       Date:  2015-03-02       Impact factor: 43.841

2.  Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement.

Authors:  Karthik Krishnan; Shaikh Mohammad Tauquir; Saranyan Vijayaraghavan; Ramesh Mohan
Journal:  RSC Adv       Date:  2021-07-02       Impact factor: 4.036

3.  Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Authors:  Agnes Gubicza; Dávid Zs Manrique; László Pósa; Colin J Lambert; György Mihály; Miklós Csontos; András Halbritter
Journal:  Sci Rep       Date:  2016-08-04       Impact factor: 4.379

4.  Probing nanoscale oxygen ion motion in memristive systems.

Authors:  Yuchao Yang; Xiaoxian Zhang; Liang Qin; Qibin Zeng; Xiaohui Qiu; Ru Huang
Journal:  Nat Commun       Date:  2017-05-04       Impact factor: 14.919

5.  Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K.

Authors:  Kolton Drake; Tonglin Lu; Md Kamrul H Majumdar; Kristy A Campbell
Journal:  Micromachines (Basel)       Date:  2019-09-30       Impact factor: 2.891

6.  Theory and experimental verification of configurable computing with stochastic memristors.

Authors:  Rawan Naous; Anne Siemon; Michael Schulten; Hamzah Alahmadi; Andreas Kindsmüller; Michael Lübben; Arne Heittmann; Rainer Waser; Khaled Nabil Salama; Stephan Menzel
Journal:  Sci Rep       Date:  2021-02-18       Impact factor: 4.379

7.  Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching.

Authors:  Maik-Ivo Terasa; Pia Holtz; Niko Carstens; Sören Kaps; Franz Faupel; Alexander Vahl; Rainer Adelung
Journal:  PLoS One       Date:  2022-03-31       Impact factor: 3.240

8.  A double barrier memristive device.

Authors:  M Hansen; M Ziegler; L Kolberg; R Soni; S Dirkmann; T Mussenbrock; H Kohlstedt
Journal:  Sci Rep       Date:  2015-09-08       Impact factor: 4.379

9.  Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator.

Authors:  Yu Li; Meiyun Zhang; Shibing Long; Jiao Teng; Qi Liu; Hangbing Lv; Enrique Miranda; Jordi Suñé; Ming Liu
Journal:  Sci Rep       Date:  2017-09-11       Impact factor: 4.379

10.  Design of defect-chemical properties and device performance in memristive systems.

Authors:  M Lübben; F Cüppers; J Mohr; M von Witzleben; U Breuer; R Waser; C Neumann; I Valov
Journal:  Sci Adv       Date:  2020-05-08       Impact factor: 14.136

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