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Literature DB >> 33467567

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications.

Abstract

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...].

Entities: Chemical Disease

Year: 2021 PMID： 33467567 PMCID： PMC7830951 DOI： 10.3390/mi12010083

Source DB: PubMed Journal: Micromachines (Basel) ISSN： 2072-666X Impact factor: 2.891

20 in total

1. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.

Authors: Idriss Abid; Riad Kabouche; Catherine Bougerol; Julien Pernot; Cedric Masante; Remi Comyn; Yvon Cordier; Farid Medjdoub
Journal: Micromachines (Basel) Date: 2019-10-12 Impact factor: 2.891

2. Silver Nanorings Fabricated by Glycerol-Based Cosolvent Polyol Method.

Authors: Zhihang Li; Dong Guo; Peng Xiao; Junlong Chen; Honglong Ning; Yiping Wang; Xu Zhang; Xiao Fu; Rihui Yao; Junbiao Peng
Journal: Micromachines (Basel) Date: 2020-02-25 Impact factor: 2.891

3. Design and Implementation of a GaN-Based Three-Phase Active Power Filter.

Authors: Chao-Tsung Ma; Zhen-Huang Gu
Journal: Micromachines (Basel) Date: 2020-01-24 Impact factor: 2.891

4. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic.

Authors: Tian-Li Wu; Shun-Wei Tang; Hong-Jia Jiang
Journal: Micromachines (Basel) Date: 2020-02-03 Impact factor: 2.891

5. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss.

Authors: Hong-Kai Mao; Ying Wang; Xue Wu; Fang-Wen Su
Journal: Micromachines (Basel) Date: 2019-11-26 Impact factor: 2.891

6. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.

Authors: Ying Zhang; Haiting Xie; Chengyuan Dong
Journal: Micromachines (Basel) Date: 2019-11-14 Impact factor: 2.891

7. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.

Authors: Zhonghao Sun; Huolin Huang; Nan Sun; Pengcheng Tao; Cezhou Zhao; Yung C Liang
Journal: Micromachines (Basel) Date: 2019-12-05 Impact factor: 2.891

8. A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios.

Authors: Dawid Kuchta; Daniel Gryglewski; Wojciech Wojtasiak
Journal: Micromachines (Basel) Date: 2020-04-10 Impact factor: 2.891

9. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.

Authors: Y C Lin; S H Chen; P H Lee; K H Lai; T J Huang; Edward Y Chang; Heng-Tung Hsu
Journal: Micromachines (Basel) Date: 2020-02-21 Impact factor: 2.891

10. Effect of the Ammonium Tungsten Precursor Solution with the Modification of Glycerol on Wide Band Gap WO₃ Thin Film and Its Electrochromic Properties.

Authors: Jinxiang Liu; Guanguang Zhang; Kaiyue Guo; Dong Guo; Muyang Shi; Honglong Ning; Tian Qiu; Junlong Chen; Xiao Fu; Rihui Yao; Junbiao Peng
Journal: Micromachines (Basel) Date: 2020-03-16 Impact factor: 2.891