| Literature DB >> 32866319 |
Theodosis Giousis1,2, Georgia Potsi1,2,3, Antonios Kouloumpis1,2,3, Konstantinos Spyrou1, Yiannis Georgantas1,2,4, Nikolaos Chalmpes1, Konstantinos Dimos1,5, Myrsini-Kiriaki Antoniou1, Georgios Papavassiliou6, Athanasios B Bourlinos7, Hae Jin Kim8, Vijay Kumar Shankarayya Wadi9, Saeed Alhassan9, Majid Ahmadi2, Bart J Kooi2, Graeme Blake2, Daniel M Balazs2, Maria A Loi2, Dimitrios Gournis1, Petra Rudolf2.
Abstract
Germanane (GeH), a germanium analogue of graphane, has recently attracted considerable interest because its remarkable combination of properties makes it an extremely suitable candidate to be used as 2D material for field effect devices, photovoltaics, and photocatalysis. Up to now, the synthesis of GeH has been conducted by substituting Ca by H in a β-CaGe2 layered Zintl phase through topochemical deintercalation in aqueous HCl. This reaction is generally slow and takes place over 6 to 14 days. The new and facile protocol presented here allows to synthesize GeH at room temperature in a significantly shorter time (a few minutes), which renders this method highly attractive for technological applications. The GeH produced with this method is highly pure and has a band gap (Eg ) close to 1.4 eV, a lower value than that reported for germanane synthesized using HCl, which is promising for incorporation of GeH in solar cells.Entities:
Keywords: germanane; semiconductors; synthesis; topotatic de-intercalation; two-dimensional materials
Year: 2020 PMID: 32866319 PMCID: PMC7821264 DOI: 10.1002/anie.202010404
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336
Figure 1a) Small crystals of the synthesized β‐CaGe2 Zintl Phase. b) SEM images (and corresponding EDX spectra) of germanane before and after treatment with EDTA. c) AFM images (including height profile analysis) of exfoliated germanane sheets prepared by drop‐casting dilute suspensions (in ethanol) on Si‐wafers. d) statistical analysis of the thickness and lateral dimensions of 55 GeH flakes as deduced from AFM images.
Figure 2X‐ray diffraction pattern of germanane crystallites. Top panels: a) hk0 and b) h0l reciprocal lattice images reconstructed from raw single‐crystal XRD data. Bottom panel: Observed (black data points), fitted (red line) and difference (blue line) XRD profiles. The green line indicates a polynomial fit to the background. Markers underneath the pattern indicate peak positions allowed by symmetry. The inset shows the refined crystal structure viewed along the b‐axis.
Partially refined atomic coordinates and isotropic displacement factors for germanane at 295 K. Hydrogen positions were generated by geometrical considerations and not refined. Space group C2: a=6.789(10) Å, b=4.035(5) Å, c=11.24(4) Å, β=105.5(2)°.
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Atom |
|
|
|
|
|---|---|---|---|---|
|
Ge1 |
0.6547(10) |
0.382(3) |
0.9642(10) |
0.058(2) |
|
Ge2 |
0.6934(11) |
0.015(3) |
0.5359(12) |
0.058(2) |
|
H1 |
0.6172 |
0.3820 |
0.8241 |
|
|
H2 |
0.7344 |
0.0150 |
0.6796 |
Figure 3Bright field TEM images of two different GeH flakes suspended on carbon film. Inset in “a” illustrates the corresponding selected area electron diffraction (SAED) pattern of GeH flakes recorded from the area circled in black. The measured d‐spacing of 3.3 Å corresponds to {110} and {020} lattice planes, while the measured d‐spacing of 1.96 Å corresponds to {200} and {130} lattice planes. The SAED pattern is indexed along the [001] axis. The line intensity profile along the green line indicates higher intensities for the inner planes (3.3 Å) than for the outer planes (1.96 Å) for this multilayer GeH flake.
Figure 4Spectroscopic characterization of GeH: a) 1H MAS NMR of GeH sample before and after thermal treatment at various temperatures (150, 200 and 275 °C). b) Raman and c) FT‐IR spectrum of GeH. d) Diffuse reflectance absorbance (DRA) spectrum plotted as Kubelka–Munk function versus wavelength; inset: Tauc‐plot analysis of the Kubelka–Munk function for the allowed direct transition.