Eugenio Cinquanta1, Samim Sardar2, Warren L B Huey3, Caterina Vozzi1, Joshua E Goldberger3, Cosimo D'Andrea2,4, Christoph Gadermaier2,4. 1. Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, Milano 20133, Italy. 2. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli 70, Milano 20133, Italy. 3. Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, United States. 4. Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano 20133, Italy.
Abstract
Methyl-substituted germanane is an emerging material that has been proposed for novel applications in optoelectronics, photoelectrocatalysis, and biosensors. It is a two-dimensional semiconductor with a strong above-gap fluorescence associated with water intercalation. Here, we use time-resolved photoluminescence spectroscopy to understand the mechanism causing this fluorescence. We show that it originates from two distinct exciton populations. Both populations recombine exponentially, accompanied by the thermally activated transfer of exciton population from the shorter- to the longer-lived type. The two exciton populations involve different electronic levels and couple to different phonons. The longer-lived type of exciton migrates within the disordered energy landscape of localized recombination centers. These outcomes shed light on the fundamental optical and electronic properties of functionalized germanane, enabling the groundwork for future applications in optoelectronics, light harvesting, and sensing.
Methyl-substituted germanane is an emerging material that has been proposed for novel applications in optoelectronics, photoelectrocatalysis, and biosensors. It is a two-dimensional semiconductor with a strong above-gap fluorescence associated with water intercalation. Here, we use time-resolved photoluminescence spectroscopy to understand the mechanism causing this fluorescence. We show that it originates from two distinct exciton populations. Both populations recombine exponentially, accompanied by the thermally activated transfer of exciton population from the shorter- to the longer-lived type. The two exciton populations involve different electronic levels and couple to different phonons. The longer-lived type of exciton migrates within the disordered energy landscape of localized recombination centers. These outcomes shed light on the fundamental optical and electronic properties of functionalized germanane, enabling the groundwork for future applications in optoelectronics, light harvesting, and sensing.
Two-dimensional
(2D) materials
are presently one of the most actively explored platforms for the
development of nanoscaled (opto)electronic devices.[1−3] Monoelemental
2D materials (Xenes) and their substituted counterparts (Xanes, e.g.,
GeH or GeCH3) are rapidly emerging alongside the much more
well-studied transition metal dichalcogenide semiconductors because
of high electron mobility, a wide range of band gaps, and the possible
tuning of their morphology and physical properties.[4−10] Germanane has been proposed recently as a novel active material
for optoelectronics, photoelectrocatalysis, antibacterial coating,
and biosensors, with the specific performances determined by the functional
groups.[11−16]The photoluminescence (PL) of multilayer GeCH3,
conversely
to its H-terminated counterpart, is tightly linked to the presence
of water in the van der Waals gap.[17] Water
intercalation switches the PL spectrum reversibly between a bright
red peak centered around 1.97 eV—significantly above the 1.62
eV bandgap—for the hydrated material, and a broad band-tail
emission for the dry one. The PL excitation spectrum of the 1.97 eV
emission starts at 2.1 eV and has its maximum at 3.5 eV, hence demonstrating
that this emission arises from strong electronic transitions involving
electronic levels above the conduction band minimum and/or below the
valence band maximum. The strong above-gap PL and simultaneous suppression
of the band-tail emission suggest that the involved above-gap levels
have no allowed relaxation channel toward the band edges. A deeper
insight into the electronic nature of the involved excited states,
the interplay between them, and the associated time scales[18−20] is vital for rationalizing Xanes’ optoelectronic and light-harvesting
functionalities.In this work, we exploit time-resolved photoluminescence
(TRPL)
to unveil the origin of the 1.97 eV above bandgap emission in GeCH3. From the analysis of the emission peak energy and intensity
as a function of time and temperature, we assign the observed fluorescence
to the interplay of two distinct exciton populations and discuss their
electronic nature.The polycrystalline powders of GeCH3 were synthesized
following previously established procedures.[17]For the TRPL measurements, we used a Ti:sapphire oscillator
(Chameleon
Ultra II Coherent) producing a train of 140 fs pulses with a repetition
rate of 80 MHz at 800 nm. A β-barium borate (BBO) crystal was
used to obtain the second harmonic at 400 nm. Spatial resolution was
achieved through the incorporation of a homemade microscope in the
setup.[21] A long pass dichroic mirror at
530 nm was used to reflect the excitation beam (400 nm) that was then
coupled to a 20× objective (Nikon) to focus onto the sample with
a spot size of about 6 μm. The emission signals were collected
in backscattering geometry using a 550 nm long-pass filter and analyzed
by a spectrograph (Princeton Instruments Acton SP2300) coupled to
a streak camera (Hamamatsu C5680, Japan) equipped with a synchro-scan
voltage sweep module. In these measurements, the fluorescence intensity
was obtained as a function of both wavelength and time with spectral
and temporal resolutions of ∼1 nm (∼3 meV in our spectral
range) and ∼20 ps (for 2 ns time window), respectively. Cryogenic
measurements were performed using a cryostat (Oxford Instruments)
cooled with liquid nitrogen under vacuum conditions (10–6 mbar). From the synthesized powder, we selected a bulk flake of
a few hundred micrometer lateral size and glued it with two thin slices
of carbon tape onto a fused silica substrate. The sample was then
gently annealed at 150 °C under a vacuum for 15–18 h before
measurement to remove most of the intercalated water and reach a water
concentration that remains stable during the measurements at varying
temperatures.Panels a and b in Figure show the ball-and-stick model of dry and
water intercalated
bulk GeCH3. For the investigation of the above bandgap
emission, TRPL characterization was performed as described above. Figure c shows the time-integrated
(0–2 ns) TRPL spectra for the dry (dash-dotted blue curve)
and the hydrated (solid turquoise curve) sample. The fluorescence
is largely quenched but still clearly detectable when the sample is
placed in 1 × 10–6 mbar, confirming that the
remaining H2O molecules are enough to induce the 1.9 eV
emission.[17]
Figure 1
Atomic structure of GeCH3 (a) without water intercalation
and (b) with water intercalation. Ge atoms are orange, Carbon atoms
are black, hydrogen atoms are white, and oxygen atoms are red. (c)
Photoluminescence integrated over time for dry (under a vacuum, dash-dotted
blue curve) and hydrated (in air, turquoise solid curve) GeCH3 acquired with a mean excitation power of 15 μW; (d)
normalized TRPL spectra of the vacuum-treated “dry”
sample at 77 K integrated into the 0 < t <
100 ps (dash-dotted curve), 200 ps < t < 300
ps (dashed curve) and 900 < t < 1000 ps (solid
curve) temporal windows; (e) normalized spectrally integrated (1.65–2.25
eV) dynamics of the vacuum-treated “dry” sample at 77
K upon mean excitation powers of 3 μW (dots), 10 μW (solid
curve), 30 μW (dash-dotted curve), and 100 μW (dashed
curve).
Atomic structure of GeCH3 (a) without water intercalation
and (b) with water intercalation. Ge atoms are orange, Carbon atoms
are black, hydrogen atoms are white, and oxygen atoms are red. (c)
Photoluminescence integrated over time for dry (under a vacuum, dash-dotted
blue curve) and hydrated (in air, turquoise solid curve) GeCH3 acquired with a mean excitation power of 15 μW; (d)
normalized TRPL spectra of the vacuum-treated “dry”
sample at 77 K integrated into the 0 < t <
100 ps (dash-dotted curve), 200 ps < t < 300
ps (dashed curve) and 900 < t < 1000 ps (solid
curve) temporal windows; (e) normalized spectrally integrated (1.65–2.25
eV) dynamics of the vacuum-treated “dry” sample at 77
K upon mean excitation powers of 3 μW (dots), 10 μW (solid
curve), 30 μW (dash-dotted curve), and 100 μW (dashed
curve).The fluorescence of the vacuum-treated
“dry” sample
integrated into different temporal windows (0 < t < 100 ps, 200 ps < t < 300 ps and 900
< t < 1000 ps), shown in Figure d, changes shape and peak position with time t after excitation, indicating that the fluorescence originates
from more than just one population of recombining e–h pairs.
In this respect, previous TRPL measurements on GeCH3 flakes
revealed the presence of two emitting species, therein assigned to
midgap trap states and the band tail emission.[22] The PL traces integrated over the spectral range 1.65–2.25
eV, as shown in Figure e, decay almost independently of the excitation fluence over 2 orders
of magnitude. We deduce that the relevant relaxation processes are
linear with the density of photogenerated population n, i.e., follow an exponential decay and do not involve any interaction
between nongeminate photoexcited species. Indeed, if free charge carriers
were photogenerated, we would expect a more noticeable change in the
recombination dynamics with increasing fluence, due to the rate proportional
to n2 of such dynamics.[23] Therefore, our observation is consistent with the prediction
of excitons with hundreds of meV binding energy as the primary photoexcited
species in germanane,[24,25] as observed in other 2D semiconductors.[26−29]To gain further insight into the electronic nature and the
recombination
dynamics of the emitting states we explored the temperature dependence
of TRPL from 77 to 323 K. Figures a and 2b show the spectrally
integrated PL traces. Remarkably, the dynamics depend nonmonotonically
on temperature. In the range from 77 K to approximately 200 K, the
dynamics become gradually slower with increasing temperature, while
at higher temperatures they quickly become faster again.
Figure 2
(a) Spectrally
integrated dynamics acquired upon 10 μW excitation
power at 77 K (circles), 150 K (squares), and 200 K (triangles) together
with the fit to eq (continuous
red curve). (b) Spectrally integrated dynamics acquired upon 10 μW
excitation power at 225 K (circles), 273 K (squares), and 323 K (triangles)
together with the fit to eq (continuous red curve). The black arrows indicate increasing
temperature; (c) spectrally integrated dynamics acquired at 77 K (circles)
upon 10 mW excitation power, fitted to eqs (continuous red curve), time-dependent populations
of long- and short-lived excitons (orange and blue dashed lines, respectively);
(d–f) time constants τ1, τ2, and τtr extracted from the fit to eq as a function of temperature.
(a) Spectrally
integrated dynamics acquired upon 10 μW excitation
power at 77 K (circles), 150 K (squares), and 200 K (triangles) together
with the fit to eq (continuous
red curve). (b) Spectrally integrated dynamics acquired upon 10 μW
excitation power at 225 K (circles), 273 K (squares), and 323 K (triangles)
together with the fit to eq (continuous red curve). The black arrows indicate increasing
temperature; (c) spectrally integrated dynamics acquired at 77 K (circles)
upon 10 mW excitation power, fitted to eqs (continuous red curve), time-dependent populations
of long- and short-lived excitons (orange and blue dashed lines, respectively);
(d–f) time constants τ1, τ2, and τtr extracted from the fit to eq as a function of temperature.We propose a simple model for the temporal evolution
of the fluorescence,
sketched in the inset of Figure c and formulated in terms of rate equations (eq ). We assume two distinct
exciton populations n1 and n2, both localized at water-induced recombination centers
(RCs). Each population is formed at a time scale shorter than our
instrument response function and decays exponentially with its own
time constant τ1 and τ2, which comprise
both radiative and nonradiative recombination. Additionally, we assume
transfer from n2 to n1 with a simple, Arrhenius-like thermal activation with
a prefactor 1/τ and activation
energy Δε1:[29]The simple model
fits the measured PL temporal
evolution at different temperatures remarkably well (Figures a–c). For all temperatures,
we obtained the best fit for initial populations of approximately
20% n1 and 80% n2. The exponential decay times are shown in Figure d, e, around 650 ps for τ1 and around 45 ps for τ2. These times vary
by ±20% up to 300 K. Each of them comprises the radiative and
nonradiative contributions τr and τnr. Hence, the small variations in τ1 and τ2, which both seem to peak around 200 K, may be due to small
opposite trends of τr and τnr with
temperature, resulting in weakly temperature-dependent PL quantum
yields η1 = τnr1/(τnr1 + τr1) and η2 = τnr2/(τnr2 + τr2). τtr shown in Figure f is a prefactor to the Arrhenius term for the thermally activated
transfer of excitons from population n2 to n1. The almost constant τtr around 80 ps confirms the assumed simple Arrhenius behavior
with a fitted activation energy of Δε1 = 52 meV. A possible back transfer of population from n1 to n2 cannot be
distinguished in our data due to the short lifetime of n2.To deconvolve the spectral contribution of n1 and n2, we fitted
the time-dependent
fluorescence intensity I(E, t) at each wavelength aswhere β1(T,E) = αη1(T)A1(E) and
β2(T,E)
= αη2(T)A2(E). Because all decay processes
are exponential, the derivatives in eq are proportional to the respective populations. Each
recombining exciton emits a photon with a probability η1(T) and η2(T), respectively, corresponding to the temperature-dependent PL quantum
yields of the two populations. Each emitted photon triggers a count
on the detector with a probability α, which depends on the geometry
of the sample and the measuring instrument and is assumed constant
throughout all measurements. A1(E) and A2(E) are dimensionless functions whose integral over the whole spectral
range is normalized to 1 and that reflects the shape of the PL spectra.The fluorescence spectra of both populations η1(T)A1(E) and η2(T)A2(E), shown in Figure a–c are similar to single Gaussians
with a width σ of around 100 meV. If we observed a simple relaxation
or exciton migration within an energy distribution of recombination
centers, this would always result in a red shift for increasing time t. In such a situation, our model would always yield A1(E) red-shifted relative to A2(E). However, A1(E), which is the spectrum of the longer-lived
exciton species, is red-shifted relative to A2(E) at 100 and 323 K, whereas at 200 K it
is blue-shifted. This confirms that we indeed observe two distinct
populations of emitters with different temperature-dependent spectra.
Figure 3
(a–c)
Fluorescence spectra of long- (orange curve) and short-lived
(blue curve) excitons at 100, 200, and 323 K, respectively. (d) Arrhenius
plot of the integrated intensities B1 of
long-lived centers (top panel, orange circles) together with the fit
to eq (solid orange
curve) and B2 of short-lived centers (bottom
panel, blue circles) together with the fit to eq (solid blue curve). (e, f) Shift as a function
of the temperature of long-lived centers (orange squares) together
with the fit to eq (dashed
orange curve) and the short-lived centers (blue squares) together
with the fit to eq (dashed
blue curve), respectively.
(a–c)
Fluorescence spectra of long- (orange curve) and short-lived
(blue curve) excitons at 100, 200, and 323 K, respectively. (d) Arrhenius
plot of the integrated intensities B1 of
long-lived centers (top panel, orange circles) together with the fit
to eq (solid orange
curve) and B2 of short-lived centers (bottom
panel, blue circles) together with the fit to eq (solid blue curve). (e, f) Shift as a function
of the temperature of long-lived centers (orange squares) together
with the fit to eq (dashed
orange curve) and the short-lived centers (blue squares) together
with the fit to eq (dashed
blue curve), respectively.Given that the fluorescence spectra of the two populations as plotted
in Figures c are proportional
to the PL quantum yields, we plot B1(T) = ∫β1(T,E)dE and B2(T) = ∫β2(T,E)dE in Figure d to reveal additional nonradiative recombination
channels. Remarkably, B2(T) suggests an
Arrhenius-like thermally activated nonradiative channel:where B2(0) is
proportional to the quantum yield at 0 K, τnr2 is
the Arrhenius prefactor of the additional thermally activated nonradiative
channel, and Δεnr2 is the activation energy.Fitting our results with eq , we obtain τ ∼
0.5 ps and Δεnr2 = 110 meV.B1(T), on the other
hand, starts to increase from 125 K, reaches its maximum value at
200 K, and then is quenched at higher temperatures. n1 is populated predominantly from n2 via thermal activation. Together with the introduction of
an Arrhenius-type nonradiative term, this results in a more complex
temperature-dependent quantum yield:where B1(0) is
proportional to the quantum yield at 0 K, Δε1 and Δεnr1 are the activation energies of
the transfer from n2 to n1 and the nonradiative processes for n1, respectively, a1= τ1/τnr1, a2 = τ2/τtr, and c is the ratio between
the initial populations n2 and n1.This model is adapted from the one
developed for a system including
two emitter populations where (i) the carrier can recombine to the
ground state from each of the populations; (ii) the species can migrate
only from one population to the other and not vice versa.[29] We note that this formalism has been developed
for CW PL data. Because the CW PL intensity is proportional to the
PL quantum yield, we can apply the same formalism to model our B1(T).From the fit, we
obtain Δε1 ∼ 45
meV, which is in good agreement with the value of 52 meV obtained
from the fit of the spectrally integrated dynamics with eq . For the nonradiative processes,
we extracted τnr1 ∼ 2 ps and an activation
energy Δεnr1 ∼ 140 meV. The a2 ratio between τ2 and τtr extracted from the fit is ∼5, which is higher than
the one obtained from the fit of the dynamics to eq without this additional nonradiative process
(a2 ∼ 2), whereas for c, we obtained n1 = 12% and n2 = 88%, in good agreement with the initial populations
used to solve the rate equations (20%, 80%). The agreement between
the fit parameters could be improved by iterating through eqs –4, but no added understanding would be gained. The activation
energies of nonradiative processes of both n1 and n2 are ∼3 times that
of the transfer from n2 to n1. It is plausible that this activation involves either
excitation into different bands within the crowded band structure
of GeCH3,[17] from which nonradiative
recombination occurs, or thermally activated exciton dissociation.
In the latter case, the activation energy would be a measure of the
exciton binding energy.For further insight into the nature
of the two exciton populations,
we fit A1(E) and A2(E) with a Gaussian curve
and plot the peak positions as a function of the temperature in Figure e, f. The A2(E) peak position follows
the O’Donnell and Chen model,[30] which
is a refinement of the empirical Varshni equation[31] and provides more insight into the electron–phonon
coupling at the origin of the temperature-dependent bandgap:where E0 is the
PL peak at 0 K, S is the Huang–Rhys parameter,
and ⟨Eph⟩ is the average
energy of phonons coupling to the involved electronic levels. From
the fit, we obtain E0 = 1.97 eV, S = 5.3, and ⟨Eph⟩
= 66 meV.The temperature-dependent peak position of A1(E) exhibits first a blue
shift from 77 to
150 K and a subsequent red shift from 175 to 323 K. Such “S
shape” behavior has been previously reported for the high energy
band of the GeCH3 PL emission,[22] but it was not investigated in detail. The initial blue shift followed
by a red shift of the emission peak energy has been observed in both
CW and TRPL measurements for different semiconductor systems,[29,32−39] including excitonic materials with a certain amount of disorder,
such as organic–inorganic lead-halide perovskites,[40,41] 2D transition metal dichalcogenides,[42−44] or phosphorene.[45] It has been ascribed to thermal redistribution
of excitons within an ensemble of width σ of localization centers
with a mean activation energy ΔE. We obtain
the temperature-dependent PL peak position:[36]where the first two terms of eq are the same as in eq . The third term accounts for exciton
migration between RCs,[35] with x(T) being the solution of eq . τ1 and τtr are temperature-dependent and are taken from panels d and f in Figure . From the fit reported
in Figure e, we extracted E0 = 2.1 eV, S = 5.2, ⟨Eph⟩= 30 meV, ΔE = 37 meV, and, σ = 145 meV. Hence, we can conclude that the
width of the distribution is similar to the width of the PL peaks
and the activation energy for exciton migration is a fraction of this
width.Our results allow us to extract vital information about
the nature
of the two types of excitons at the origin of the observed fluorescence.
The formalism of eqs and 3–7 has been
developed for arrays of two species of quantum wells (QWs),[29,32−39] where both species of QWs show a certain distribution of exciton
energy. Analogously, germanane provides a disordered energy landscape
for exciton migration. The temperature-dependent A1(E) and A2(E) peak positions suggest that exciton migration
is relevant only for the longer-lived exciton species.Intriguingly,
the temperature dependence of A1(E) and A2(E) as described in eqs –7 arises from coupling to phonons
with mean energy ⟨Eph⟩ =
30 meV (240 cm–1) for A1(E) and ⟨Eph⟩
= 66 meV (530 cm–1) for A2(E), suggesting that the two excitons preferentially
interact with different vibrational modes of the lattice. The presence
of the 1.97 eV emission after annealing suggests that the residual
water bears sufficient concentration to change the electronic structure
locally and to provide a high density of recombination centers that
enables exciton migration between them. Quantum chemical calculations[17] have found a dense ensemble of electronic levels
close to the valence and conduction band edges as a consequence of
the small local structural distortions in each layer induced by the
presence of H2O. We can thus assume two types of emitting
excitons that have their electrons and/or holes in different levels
from this ensemble. Our results prescribe the following requirements
for the two emitting states: (i) both have an allowed transition to
the ground state but not toward the band edges, (ii) one of them can
transition to the other via thermal activation, and (iii) they couple
with different lattice modes. Concerning the transition from n2 to n1, the energy
difference between the A1(E) and A2(E) peaks in
panels e and f in Figure varies strongly with temperature. This variation is inconsistent
with a simple Arrhenius-like thermally stimulated transfer with a
fixed activation energy of 37 meV, as assumed in eq and confirmed in Figure f. An alternative mechanism has recently
been proposed for the interlayer exciton recombination in a heterostructure
of two 2D monolayers.[46] Low energy phonons
periodically modulate the band structure between a direct and an indirect
gap, leading to a recombination rate that has a temperature dependence
very similar to an Arrhenius behavior with formal activation energy
much higher than the energies of the phonons involved. We can assume
a similar mechanism for the population transfer from n2 to n1 via a phonon-induced
modulation of the band structure.To summarize, we used TRPL
spectroscopy at different temperatures
to study the above bandgap fluorescence of GeCH3 samples.
We find two distinct populations of emitting excitons localized at
RCs within the intercalated water. Compared to 2D transition metal
dichalcogenides, research on Xenes and Xanes is still in its infancy
and the exciton binding energy, exciton transport mechanisms, trions,
biexcitons, and higher many-body effects still need investigation,
as well as fluorescence quantum yield and charge separation at interfaces
as the groundwork for future applications in optoelectronics, light
harvesting, and sensing.
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