| Literature DB >> 32770035 |
Valentina Bertana1, Giorgio Scordo1, Matteo Parmeggiani1,2, Luciano Scaltrito1, Sergio Ferrero1, Manuel Gomez Gomez1, Matteo Cocuzza1,3, Davide Vurro3, Pasquale D'Angelo3, Salvatore Iannotta3, Candido F Pirri1,2, Simone L Marasso4,5.
Abstract
Rapid Prototyping (RP) promises to induce a revolutionary impact on how the objects can be produced and used in industrial manufacturing as well as in everyday life. Over the time a standard technique as the 3D Stereolithography (SL) has become a fundamental technology for RP and Additive Manufacturing (AM), since it enables the fabrication of the 3D objects from a cost-effective photocurable resin. Efforts to obtain devices more complex than just a mere aesthetic simulacre, have been spent with uncertain results. The multidisciplinary nature of such manufacturing technique furtherly hinders the route to the fabrication of complex devices. A good knowledge of the bases of material science and engineering is required to deal with SL technological, characterization and testing aspects. In this framework, our study aims to reveal a new approach to obtain RP of complex devices, namely Organic Electro-Chemical Transistors (OECTs), by SL technique exploiting a resin composite based on the conductive poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and the photo curable Poly(ethylene glycol) diacrylate (PEGDA). A comprehensive study is presented, starting from the optimization of composite resin and characterization of its electrochemical properties, up to the 3D OECTs printing and testing. Relevant performances in biosensing for dopamine (DA) detection using the 3D OECTs are reported and discussed too.Entities:
Year: 2020 PMID: 32770035 PMCID: PMC7414134 DOI: 10.1038/s41598-020-70365-8
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Cyclic voltammetry of potassium ferricyanide (K3[Fe(CN)6]), 25 mM, in PBS (pH 7.4), 100 mM (scan rates 25, 50, 100, 150, 200 and 300 mV/s) carried out using (a) a SPE equipped with Au working and counter electrodes and Ag/AgCl reference electrode; (b) the same measurement as in (a) using a homologue SPE where the working electrode is covered by a PEGDA:PEDOT layer; (c) anodic and cathodic peak positions extracted from (a) as a function of the square root of the scan rates (related fitting curves, solid lines); (d) anodic and cathodic peak positions extracted from (b) as a function of the square root of the scan rates (related fitting curves, solid lines).
Figure 2CAD drawing of the OECT to be printed.
Figure 33D printed OECT. (a) Device after printing; (b) microscope image of the 700 μm wide channel; (c) section view of the 700 μm wide channel geometry; (d) FESEM image of the same section view reported in (c); (e) FESEM image of the PEGDA:PEDOT polymerized resin in which the PEDOT particles (some are highlighted in blue) are clearly visible.
Figure 4(a) Transfer curve measured at different Vds; (b) logarithmic plot of transfer curve (solid lines) and gate leakage current (dashed lines); (c) transconductance curve obtained for Vgs scanned from -0.75 V to + 1 V; (d) output characteristics of the device.
Reported main parameters for 3D printed OECT in literatures: channel dimensions, gmax, ION/IOFF. ND indicates not declared parameter.
| Fabrication Techniques | Channel dimension W/L/t (μm) | Materials | gmax (mS) | ION/IOFF | References |
|---|---|---|---|---|---|
| Stereolithopgraphy | 700/1900/500 | PEGDA:PEDOT | 2.5 | 2.79 ± 1.6 ⋅103 | This work |
| Aerosol-jet printing | 200/200/0.2 | PEDOT:PSS | 0.52 | ND | Ref.[ |
| Laser sintering | 1,000/15,000/1,000 | PEDOT:PSS | 2 | 2 | Ref.[ |
| FDM/direct writing 3D | 1,000/1,600/7.1 | PEDOT:PSS | 31.8 | 1.33⋅103 | Ref.[ |
| Syringe deposition | 3,000/3,000/5 | PEDOT:PSS | ND | 2 | Ref.[ |
| Melt extrusion/electrospining | 200/1,500/200 | PEDOT:Nafion | 30–40 | 100 | Ref.[ |
Figure 5(a) Time of flight measurement: device driven by a constant gate current with application of a 15 s pulse with Vds = − 100 mV. The inset shows the linear fit of vs Igs yielding the hole mobility . (b) Gate current response to a constant gate voltage pulse of 15 s with Vds = 0 V. The charge Q accumulated in the channel has been obtained by integration of Igs curves, the linear fit of Q vs Vgs yielded a capacitance . (c) Ids response to a constant Vgs pulse of 15 s at Vds = − 600 mV (central panel) and Vds = − 10 mV (lower panel). The red dotted line in the central panel is an exponential fit of the switching behavior of the device, yielding a rise time and a fall time .
Figure 6Calibration curve for dopamine sensing by (a) a PEGDA/PEDOT 3D OECT; (b) typical transfer curves recorded at different dopamine concentrations ([DA] = 0, 10 µM, 100 µM, 1 mM and 5 mM, error bars are standard deviations) and (c) universal curve obtained by merging transfer curves in (c) upon shifting them along the Vgs axis.